| Non-volatile memory device, method of operating the same, and method of fabricating the same S Kim, Y Park, D Kim, W Kim, YG Jin, SH Lee US Patent 7,729,164, 2010 | 133 | 2010 |
| A compact eFuse programmable array memory for SOI CMOS J Safran, A Leslie, G Fredeman, C Kothandaraman, A Cestero, X Chen, ... 2007 IEEE Symposium on VLSI Circuits, 72-73, 2007 | 117 | 2007 |
| Microstructure of thermal hillocks on blanket Al thin films D Kim, B Heiland, WD Nix, E Arzt, MD Deal, JD Plummer Thin Solid Films 371 (1-2), 278-282, 2000 | 111 | 2000 |
| Reliability qualification of CoSi2 electrical fuse for 90nm technology C Tian, B Park, C Kothandaraman, J Safran, D Kim, N Robson, SS Iyer 2006 IEEE International Reliability Physics Symposium Proceedings, 392-397, 2006 | 104 | 2006 |
| An investigation of electrical current induced phase transformations in the NiPtSi/polysilicon system DK Kim, A Domenicucci, SS Iyer Journal of Applied Physics 103 (7), 2008 | 88 | 2008 |
| Study of the effect of grain boundary migration on hillock formation in Al thin films D Kim, WD Nix, RP Vinci, MD Deal, JD Plummer Journal of Applied Physics 90 (2), 781-788, 2001 | 66 | 2001 |
| Thickness-dependent resistive switching in black phosphorus CBRAM S Rehman, MF Khan, S Aftab, H Kim, J Eom, D Kim Journal of Materials Chemistry C 7 (3), 725-732, 2019 | 57 | 2019 |
| Electrical and mechanical properties of tantalum nitride thin films deposited by reactive sputtering D Kim, H Lee, D Kim, YK Kim Journal of crystal growth 283 (3-4), 404-408, 2005 | 54 | 2005 |
| Metal gate compatible flash memory gate stack RA Booth Jr, D Kim, HS Yang, X Yu US Patent 7,834,387, 2010 | 53 | 2010 |
| Low-cost deep trench decoupling capacitor device and process of manufacture HL Ho, JE Barth Jr, R Divakaruni, WF Ellis, JE Faltermeier, BA Anderson, ... US Patent 7,193,262, 2007 | 53 | 2007 |
| Programmable fuse/non-volatile memory structures in BEOL regions using externally heated phase change material KN Chen, BG Elmegreen, D Kim, C Kothandaraman, L Krusin-Elbaum, ... US Patent 7,633,079, 2009 | 50 | 2009 |
| Programmable fuse/non-volatile memory structures using externally heated phase change material BG Elmegreen, SS Iyer, D Kim, L Krusin-Elbaum, DM Newns, B Park US Patent 7,411,818, 2008 | 47 | 2008 |
| WS2-embedded MXene/GO hybrid nanosheets as electrodes for asymmetric supercapacitors and hydrogen evolution reactions S Hussain, D Vikraman, ZA Sheikh, MT Mehran, F Shahzad, KM Batoo, ... Chemical Engineering Journal 452, 139523, 2023 | 45 | 2023 |
| Patterning of Ge2Sb2Te5 phase change material using UV nano-imprint lithography KY Yang, SH Hong, D Kim, B Cheong, H Lee Microelectronic engineering 84 (1), 21-24, 2007 | 44 | 2007 |
| A review on two-dimensional (2D) magnetic materials and their potential applications in spintronics and spin-caloritronic E Elahi, G Dastgeer, G Nazir, S Nisar, M Bashir, HA Qureshi, D Kim, J Aziz, ... Computational Materials Science 213, 111670, 2022 | 42 | 2022 |
| Enhanced electrical and broad spectral (UV-Vis-NIR) photodetection in a Gr/ReSe 2/Gr heterojunction E Elahi, MF Khan, S Rehman, HMW Khalil, MA Rehman, D Kim, H Kim, ... Dalton Transactions 49 (29), 10017-10027, 2020 | 40 | 2020 |
| Resistive Switching in Solution-Processed Copper Oxide (CuxO) by Stoichiometry Tuning S Rehman, JH Hur, D Kim The Journal of Physical Chemistry C 122 (20), 11076-11085, 2018 | 38 | 2018 |
| Tunable resistive switching of vertical ReSe2/graphene hetero-structure enabled by Schottky barrier height and DUV light S Rehman, H Kim, MF Khan, JH Hur, J Eom, D Kim Journal of Alloys and Compounds 855, 157310, 2021 | 37 | 2021 |
| Electrical antifuse with integrated sensor D Kim, H Kim, C Kothandaraman, B Park, JM Safran US Patent 7,714,326, 2010 | 37 | 2010 |
| High mobility ReSe2 field effect transistors: Schottky-barrier-height-dependent photoresponsivity and broadband light detection with Co decoration MF Khan, S Rehman, I Akhtar, S Aftab, HMS Ajmal, W Khan, D Kim, J Eom 2D Materials 7 (1), 015010, 2019 | 36 | 2019 |
