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Sourish Banerjee
Sourish Banerjee
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Hot‐Wire Assisted ALD: A Study Powered by In Situ Spectroscopic Ellipsometry
AY Kovalgin, M Yang, S Banerjee, RO Apaydin, AAI Aarnink, S Kinge, ...
Advanced materials interfaces 4 (18), 1700058, 2017
322017
Size-dependent effects on the temperature coefficient of resistance of carbon nanotube vias
S Vollebregt, S Banerjee, K Beenakker, R Ishihara
IEEE Transactions on Electron Devices 60 (12), 4085-4089, 2013
312013
PEALD AlN: Controlling growth and film crystallinity
S Banerjee, AAI Aarnink, R van de Kruijs, AY Kovalgin, J Schmitz
physica status solidi (c) 12 (7), 1036-1042, 2015
302015
Thermal Atomic Layer Deposition of Polycrystalline Gallium Nitride
S Banerjee, AAI Aarnink, DJ Gravesteijn, AY Kovalgin
The Journal of Physical Chemistry C 123 (37), 23214-23225, 2019
232019
CMOS back-end-of-line compatible ferroelectric tunnel junction devices
V Deshpande, KS Nair, M Holzer, S Banerjee, C Dubourdieu
Solid-State Electronics 186, 108054, 2021
152021
Thermal conductivity of low temperature grown vertical carbon nanotube bundles measured using the three-ω method
S Vollebregt, S Banerjee, K Beenakker, R Ishihara
Applied Physics Letters 102 (19), 2013
152013
Effect of O2 plasma exposure time during atomic layer deposition of amorphous gallium oxide
H Kröncke, F Maudet, S Banerjee, J Albert, S Wiesner, V Deshpande, ...
Journal of Vacuum Science & Technology A 39 (5), 2021
102021
Composite GaN–C–Ga (“GaCN”) Layers with Tunable Refractive Index
S Banerjee, AJ Onnink, S Dutta, AAI Aarnink, DJ Gravesteijn, AY Kovalgin
The Journal of Physical Chemistry C 122 (51), 29567-29576, 2018
102018
Charge carrier transport and electroluminescence in atomic layer deposited poly-GaN/c-Si heterojunction diodes
G Gupta, S Banerjee, S Dutta, AAI Aarnink, J Schmitz, AY Kovalgin, ...
Journal of Applied Physics 124 (8), 2018
92018
Carbon nanotubes TSV grown on an electrically conductive ZrN support layer
S Vollebregt, S Banerjee, FD Tichelaar, R Ishihara
2015 IEEE International Interconnect Technology Conference and 2015 IEEE …, 2015
92015
Minority Carrier Injection in High-Barrier Si-Schottky Diodes
G Gupta, S Dutta, S Banerjee, HJE Raymond
IEEE Transactions on Electron Devices 65 (4), 1276 - 1282, 2018
82018
Dominant thermal boundary resistance in multi-walled carbon nanotube bundles fabricated at low temperature
S Vollebregt, S Banerjee, AN Chiaramonti, FD Tichelaar, K Beenakker, ...
Journal of Applied Physics 116 (2), 2014
72014
A Comparative Study of Low-Temperature III-V Nitrides ALD in Thermal and Radical-Enhanced Modes
S Banerjee, AY Kovalgin
ECS Transactions 86 (6), 21, 2018
62018
The growth of carbon nanotubes on electrically conductive ZrN support layers for through-silicon vias
S Vollebregt, S Banerjee, FD Tichelaar, R Ishihara
Microelectronic Engineering 156, 126-130, 2016
52016
From radical-enhanced to pure thermal ALD of gallium and aluminium nitrides
S Banerjee
4*2019
Ultra-long vertically aligned carbon nanotubes grown on conductive ZrN layers
RI S. Vollebregt, S. Banerjee, C.I.M. Beenakker
International Conference on Diamond and Carbon Materials, 2013
4*2013
Optical phase noise engineering via acousto-optic interaction and its interferometric applications
N Satapathy, D Pandey, S Banerjee, H Ramachandran
JOSA A 30 (5), 910-915, 2013
42013
Super-growth of CNTs based on ZrN for TSV application
S Banerjee
22014
Development and Analysis of Thick GaN Drift Layers on 200 mm CTE-matched Substrate for Vertical device processing
W Gonçalez Filho, M Borga, K Geens, D Cingu, U Chatterjee, S Banerjee, ...
12023
Route Toward Commercially Manufacturable Vertical GaN Devices
K Geens, M Borga, MA Khan, W Gonçalez Filho, A Vohra, S Banerjee, ...
IEEE Transactions on Electron Devices, 2023
2023
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Artikelen 1–20