| Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures F Jiménez-Molinos, A Palma, F Gámiz, J Banqueri, JA Lopez-Villanueva Journal of Applied Physics 90 (7), 3396-3404, 2001 | 117 | 2001 |
| Direct and trap-assisted elastic tunneling through ultrathin gate oxides F Jiménez-Molinos, F Gámiz, A Palma, P Cartujo, JA López-Villanueva Journal of Applied Physics 91 (8), 5116-5124, 2002 | 100 | 2002 |
| Electron transport in strained Si inversion layers grown on SiGe-on-insulator substrates F Gamiz, P Cartujo-Cassinello, JB Roldán, F Jiménez-Molinos Journal of Applied Physics 92 (1), 288-295, 2002 | 85 | 2002 |
| Simulation of thermal reset transitions in resistive switching memories including quantum effects MA Villena, MB González, F Jiménez-Molinos, F Campabadal, JB Roldán, ... Journal of Applied Physics 115 (21), 214504, 2014 | 63 | 2014 |
| An in-depth simulation study of thermal reset transitions in resistive switching memories MA Villena, F Jiménez-Molinos, JB Roldán, J Suñé, S Long, X Lian, ... Journal of Applied Physics 114 (14), 144505, 2013 | 62 | 2013 |
| S I M 2 R R A M : a physical model for RRAM … MA Villena, JB Roldán, F Jiménez-Molinos, E Miranda, J Suñé, M Lanza Journal of Computational Electronics 16 (4), 1095-1120, 2017 | 52 | 2017 |
| Analysis of the statistics of device-to-device and cycle-to-cycle variability in TiN/Ti/Al: HfO2/TiN RRAMs E Pérez, D Maldonado, C Acal, JE Ruiz-Castro, FJ Alonso, AM Aguilera, ... Microelectronic Engineering 214, 104-109, 2019 | 50 | 2019 |
| A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs S Aldana, P García-Fernández, A Rodríguez-Fernández, R Romero-Zaliz, ... Journal of Physics D: Applied Physics 50 (33), 335103, 2017 | 50 | 2017 |
| A new compact model for bipolar RRAMs based on truncated-cone conductive filaments—a Verilog-A approach G González-Cordero, JB Roldan, F Jiménez-Molinos, J Suñè, S Long, ... Semiconductor Science and Technology 31 (11), 115013, 2016 | 50 | 2016 |
| In-depth study of the physics behind resistive switching in TiN/Ti/HfO2/W structures G Gonzalez-Cordero, F Jimenez-Molinos, JB Roldán, MB González, ... Journal of Vacuum Science & Technology B, Nanotechnology and …, 2017 | 47 | 2017 |
| Influence of acoustic phonon confinement on electron mobility in ultrathin silicon on insulator layers L Donetti, F Gámiz, N Rodriguez, F Jimenez, C Sampedro Applied physics letters 88 (12), 122108, 2006 | 47 | 2006 |
| An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs MA Villena, MB González, JB Roldán, F Campabadal, F Jiménez-Molinos, ... Solid-State Electronics 111, 47-51, 2015 | 46 | 2015 |
| A SPICE Compact Model for Unipolar RRAM Reset Process Analysis F Jimenez-Molinos, MA Villena, JB Roldan, AM Roldan IEEE, 2015 | 44 | 2015 |
| Semiempirical modeling of reset transitions in unipolar resistive-switching based memristors R Picos, JB Roldan, MMA Chawa, P Garcia-Fernandez, ... arXiv preprint arXiv:1702.01533, 2017 | 41 | 2017 |
| A comprehensive analysis on progressive reset transitions in RRAMs MA Villena, JB Roldán, F Jimenez-Molinos, J Suñé, S Long, E Miranda, ... Journal of Physics D: applied physics 47 (20), 205102, 2014 | 41 | 2014 |
| An Analytical – Model for Surrounding-Gate Transistors That Includes Quantum and Velocity Overshoot Effects JB Roldán, F Gamiz, F Jiménez-Molinos, C Sampedro, A Godoy, ... IEEE transactions on electron devices 57 (11), 2925-2933, 2010 | 41 | 2010 |
| A new parameter to characterize the charge transport regime in Ni/HfO2/Si-n+-based RRAMs MA Villena, JB Roldán, MB González, P González-Rodelas, ... Solid-State Electronics 118, 56-60, 2016 | 35 | 2016 |
| Resistive switching in HfO2 based valence change memories, a comprehensive 3D kinetic Monte Carlo approach S Aldana, P García-Fernández, R Romero-Zaliz, MB González, ... Journal of Physics D: Applied Physics 53 (22), 225106, 2020 | 30 | 2020 |
| Coulomb scattering model for ultrathin silicon-on-insulator inversion layers F Gamiz, F Jimenez-Molinos, JB Roldan, P Cartujo-Cassinello Applied physics letters 80 (20), 3835-3837, 2002 | 30 | 2002 |
| A physically based model for resistive memories including a detailed temperature and variability description G González-Cordero, MB González, H García, F Campabadal, S Dueñas, ... Microelectronic Engineering 178, 26-29, 2017 | 29 | 2017 |
Juan B. RoldánDepartment of Electronics and Computer Technology. Granada University (Spain)Verified email at ugr.es
