Francisco Jiménez-Molinos
Francisco Jiménez-Molinos
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Cited by
Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures
F Jiménez-Molinos, A Palma, F Gámiz, J Banqueri, JA López-Villanueva
Journal of Applied Physics 90 (7), 3396-3404, 2001
Direct and trap-assisted elastic tunneling through ultrathin gate oxides
F Jiménez-Molinos, F Gámiz, A Palma, P Cartujo, JA López-Villanueva
Journal of Applied Physics 91 (8), 5116-5124, 2002
Electron transport in strained Si inversion layers grown on SiGe-on-insulator substrates
F Gamiz, P Cartujo-Cassinello, JB Roldán, F Jiménez-Molinos
Journal of Applied Physics 92 (1), 288-295, 2002
Analysis of the statistics of device-to-device and cycle-to-cycle variability in TiN/Ti/Al: HfO2/TiN RRAMs
E Pérez, D Maldonado, C Acal, JE Ruiz-Castro, FJ Alonso, AM Aguilera, ...
Microelectronic Engineering 214, 104-109, 2019
Simulation of thermal reset transitions in resistive switching memories including quantum effects
MA Villena, MB González, F Jiménez-Molinos, F Campabadal, JB Roldán, ...
Journal of Applied Physics 115 (21), 2014
A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs
S Aldana, P García-Fernández, A Rodríguez-Fernández, R Romero-Zaliz, ...
Journal of Physics D: Applied Physics 50 (33), 335103, 2017
An in-depth simulation study of thermal reset transitions in resistive switching memories
MA Villena, F Jiménez-Molinos, JB Roldán, J Suñé, S Long, X Lian, ...
Journal of Applied Physics 114 (14), 2013
Resistive switching in HfO2 based valence change memories, a comprehensive 3D kinetic Monte Carlo approach
S Aldana, P García-Fernández, R Romero-Zaliz, MB González, ...
Journal of Physics D: Applied Physics 53 (22), 225106, 2020
: a physical model for RRAM devices simulation
MA Villena, JB Roldán, F Jiménez-Molinos, E Miranda, J Suñé, M Lanza
Journal of Computational Electronics 16, 1095-1120, 2017
A new compact model for bipolar RRAMs based on truncated-cone conductive filaments—a Verilog-A approach
G González-Cordero, JB Roldan, F Jiménez-Molinos, J Suñè, S Long, ...
Semiconductor Science and Technology 31 (11), 115013, 2016
On the thermal models for resistive random access memory circuit simulation
JB Roldán, G González-Cordero, R Picos, E Miranda, F Palumbo, ...
Nanomaterials 11 (5), 1261, 2021
A SPICE Compact Model for Unipolar RRAM Reset Process Analysis
F Jimenez-Molinos, MA Villena, JB Roldan, AM Roldan
IEEE, 2015
An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs
MA Villena, MB González, JB Roldán, F Campabadal, F Jiménez-Molinos, ...
Solid-State Electronics 111, 47-51, 2015
In-depth study of the physics behind resistive switching in TiN/Ti/HfO2/W structures
G Gonzalez-Cordero, F Jiménez-Molinos, JB Roldán, MB González, ...
Journal of Vacuum Science & Technology B 35 (1), 2017
Variability in resistive memories
JB Roldán, E Miranda, D Maldonado, AN Mikhaylov, NV Agudov, ...
Advanced Intelligent Systems 5 (6), 2200338, 2023
Semiempirical modeling of reset transitions in unipolar resistive-switching based memristors
R Picos, JB Roldan, MMA Chawa, P Garcia-Fernandez, ...
arXiv preprint arXiv:1702.01533, 2017
Influence of acoustic phonon confinement on electron mobility in ultrathin silicon on insulator layers
L Donetti, F Gámiz, N Rodriguez, F Jimenez, C Sampedro
Applied physics letters 88 (12), 2006
A comprehensive analysis on progressive reset transitions in RRAMs
MA Villena, JB Roldán, F Jimenez-Molinos, J Suñé, S Long, E Miranda, ...
Journal of Physics D: applied physics 47 (20), 205102, 2014
An Analytical Model for Surrounding-Gate Transistors That Includes Quantum and Velocity Overshoot Effects
JB Roldán, F Gamiz, F Jiménez-Molinos, C Sampedro, A Godoy, ...
IEEE transactions on electron devices 57 (11), 2925-2933, 2010
Toward reliable compact modeling of multilevel 1T-1R RRAM devices for neuromorphic systems
E Pérez-Bosch Quesada, R Romero-Zaliz, E Perez, ...
Electronics 10 (6), 645, 2021
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