Karol Kalna
Karol Kalna
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FinFET versus gate-all-around nanowire FET: performance, scaling, and variability
D Nagy, G Indalecio, AJ Garcia-Loureiro, MA Elmessary, K Kalna, ...
IEEE Journal of the Electron Devices Society 6, 332-340, 2018
High mobility III-V MOSFETs for RF and digital applications
M Passlack, P Zurcher, K Rajagopalan, R Droopad, J Abrokwah, M Tutt, ...
2007 IEEE International Electron Devices Meeting, 621-624, 2007
Implementation of the density gradient quantum corrections for 3-D simulations of multigate nanoscaled transistors
AJ Garcia-Loureiro, N Seoane, M Aldegunde, R Valin, A Asenov, ...
IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2011
Effects of self-heating on performance degradation in AlGaN/GaN-based devices
B Benbakhti, A Soltani, K Kalna, M Rousseau, JC De Jaeger
IEEE transactions on electron devices 56 (10), 2178-2185, 2009
Scaling of pseudomorphic high electron mobility transistors to decanano dimensions
K Kalna, S Roy, A Asenov, K Elgaid, I Thayne
Solid-State Electronics 46 (5), 631-638, 2002
Benchmarking of FinFET, nanosheet, and nanowire FET architectures for future technology nodes
D Nagy, G Espineira, G Indalecio, AJ Garcia-Loureiro, K Kalna, N Seoane
IEEE Access 8, 53196-53202, 2020
Random dopant, line-edge roughness, and gate workfunction variability in a nano InGaAs FinFET
N Seoane, G Indalecio, E Comesana, M Aldegunde, AJ Garcia-Loureiro, ...
IEEE Transactions on Electron Devices 61 (2), 466-472, 2013
3D finite element Monte Carlo simulations of multigate nanoscale transistors
M Aldegunde, AJ García-Loureiro, K Kalna
IEEE transactions on electron devices 60 (5), 1561-1567, 2013
Quantum corrections based on the 2-D Schrödinger equation for 3-D finite element Monte Carlo simulations of nanoscaled FinFETs
J Lindberg, M Aldegunde, D Nagy, WG Dettmer, K Kalna, ...
IEEE Transactions on Electron Devices 61 (2), 423-429, 2014
Benchmarking of scaled InGaAs implant-free nanoMOSFETs
K Kalna, N Seoane, AJ Garcia-Loureiro, IG Thayne, A Asenov
IEEE transactions on electron devices 55 (9), 2297-2306, 2008
Comparison of fin-edge roughness and metal grain work function variability in InGaAs and Si FinFETs
N Seoane, G Indalecio, M Aldegunde, D Nagy, MA Elmessary, ...
IEEE Transactions on Electron Devices 63 (3), 1209-1216, 2016
Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations
MA Elmessary, D Nagy, M Aldegunde, N Seoane, G Indalecio, J Lindberg, ...
Solid-State Electronics 128, 17-24, 2017
Controlling the electrical transport properties of nanocontacts to nanowires
AM Lord, TG Maffeis, O Kryvchenkova, RJ Cobley, K Kalna, ...
Nano Letters 15 (7), 4248-4254, 2015
Drift-diffusion and hydrodynamic modeling of current collapse in GaN HEMTs for RF power application
S Faramehr, K Kalna, P Igić
Semiconductor Science and Technology 29 (2), 025007, 2014
Ballistic transport in Si, Ge, and GaAs nanowire MOSFETs
M Bescond, N Cavassilas, K Kalna, K Nehari, L Raymond, JL Autran, ...
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005
Impact of body-thickness-dependent band structure on scaling of double-gate MOSFETs: A DFT/NEGF study
A Martinez, K Kalna, PV Sushko, AL Shluger, JR Barker, A Asenov
IEEE transactions on nanotechnology 8 (2), 159-166, 2008
Review of current status of III-V MOSFETs
I Thayne, R Hill, M Holland, X Li, H Zhou, D Macintyre, S Thoms, K Kalna, ...
ECS transactions 19 (5), 275, 2009
Impact of gate edge roughness variability on FinFET and gate-all-around nanowire FET
G Espineira, D Nagy, G Indalecio, AJ Garcia-Loureiro, K Kalna, N Seoane
IEEE Electron Device Letters 40 (4), 510-513, 2019
Impact of interface state trap density on the performance characteristics of different III–V MOSFET architectures
B Benbakhti, JS Ayubi-Moak, K Kalna, D Lin, G Hellings, G Brammertz, ...
Microelectronics Reliability 50 (3), 360-364, 2010
Monte Carlo simulations of mobility in doped GaAs using self-consistent Fermi–Dirac statistics
A Islam, K Kalna
Semiconductor science and technology 26 (5), 055007, 2011
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