| Variability and Yield in h‐BN‐Based Memristive Circuits: The Role of Each Type of Defect Y Shen, W Zheng, K Zhu, Y Xiao, C Wen, Y Liu, X Jing, M Lanza Advanced Materials 33 (41), 2103656, 2021 | 64 | 2021 |
| Highly accurate thickness determination of 2D materials Y Xiao, W Zheng, B Yuan, C Wen, M Lanza Crystal Research and Technology 56 (6), 2100056, 2021 | 14 | 2021 |
| Memristors with Initial Low‐Resistive State for Efficient Neuromorphic Systems K Zhu, MR Mahmoodi, Z Fahimi, Y Xiao, T Wang, K Bukvišová, M Kolíbal, ... Advanced Intelligent Systems 4 (8), 2200001, 2022 | 13 | 2022 |
| Effect of the pressure exerted by probe station tips in the electrical characteristics of memristors Y Zuo, H Lin, J Guo, Y Yuan, H He, Y Li, Y Xiao, X Li, K Zhu, T Wang, ... Advanced Electronic Materials 6 (3), 1901226, 2020 | 12 | 2020 |
| An electrical model for trap coupling effects on random telegraph noise T Becker, X Li, P Alves, T Wang, K Zhu, Y Xiao, G Wirth, M Lanza IEEE Electron Device Letters 41 (10), 1596-1599, 2020 | 9 | 2020 |
| Modeling the variability of Au/Ti/h-BN/Au memristive devices JB Roldan, D Maldonado, C Aguilera-Pedregosa, FJ Alonso, Y Xiao, ... IEEE Transactions on Electron Devices 70 (4), 1533-1539, 2022 | 4 | 2022 |
| A Porous Perovskite Nanofiber with Reinforced Aerophobicity for High‐Performance Anion Exchange Membrane Water Splitting L Li, Z Zheng, J Li, Y Mu, Y Wang, Z Huang, Y Xiao, H Huang, S Wang, ... Small 19 (38), 2301261, 2023 | 3 | 2023 |
| Self‐Assembly of Janus Graphene Oxide via Chemical Breakdown for Scalable High‐Performance Memristors F Hui, C Zhang, H Yu, T Han, J Weber, Y Shen, Y Xiao, X Li, Z Zhang, ... Advanced Functional Materials, 2302073, 2023 | 1 | 2023 |
Mario LanzaIEEE Fellow | Associate Professor at KAUSTVerified email at kaust.edu.sa
