Agata Sakic
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Boron-layer silicon photodiodes for high-efficiency low-energy electron detection
A Šakić, LK Nanver, TLM Scholtes, CTH Heerkens, T Knežević, ...
Solid-state electronics 65, 38-44, 2011
Radiation detector
LK Nanver, TLM Scholtes, CS Kooijman, GNA Van Veen
US Patent 8,450,820, 2013
Versatile silicon photodiode detector technology for scanning electron microscopy with high-efficiency sub-5 keV electron detection
A S̆akić, LK Nanver, G Van Veen, K Kooijman, P Vogelsang, ...
2010 International Electron Devices Meeting, 31.4. 1-31.4. 4, 2010
Fully back-end TSV process by Cu electro-less plating for 3D smart sensor systems
F Santagata, C Farriciello, G Fiorentino, HW Van Zeijl, C Silvestri, ...
Journal of Micromechanics and Microengineering 23 (5), 055014, 2013
High-efficiency silicon photodiode detector for sub-keV electron microscopy
A Sakic, G van Veen, K Kooijman, P Vogelsang, TLM Scholtes, ...
IEEE transactions on electron devices 59 (10), 2707-2714, 2012
Pure-boron chemical-vapor-deposited layers: a new material for silicon device processing
LK Nanver, TLM Scholtes, F Sarubbi, WB De Boer, G Lorito, A Šakić, ...
2010 18th International Conference on Advanced Thermal Processing of …, 2010
Pure dopant deposition of B and Ga for ultrashallow junctions in Si-based devices
LK Nanver, A Sammak, V Mohammadi, KRC Mok, L Qi, A Šakić, ...
ECS Transactions 49 (1), 25, 2012
Characterization of amorphous boron layers as diffusion barrier for pure aluminium
A Šakić, V Jovanović, P Maleki, TLM Scholtes, S Milosavljević, LK Nanver
The 33rd International Convention MIPRO, 26-29, 2010
Optical stability investigation of high-performance silicon-based VUV photodiodes
L Shi, LK Nanver, A Šakić, S Nihtianov, A Gottwald, U Kroth
SENSORS, 2010 IEEE, 132-135, 2010
Series resistance optimization of high-sensitivity Si-based VUV photodiodes
L Shi, LK Nanver, A Šakić, S Nihtianov, T Knežević, A Gottwald, U Kroth
2011 IEEE International Instrumentation and Measurement Technology …, 2011
Silicon photodiodes for high-efficiency low-energy electron detection
A Šakić, LK Nanver, TLM Scholtes, CTH Heerkens, G Van Veen, ...
2010 Proceedings of the European Solid State Device Research Conference, 102-105, 2010
Ge-on-Si: Single-crystal selective epitaxial growth in a CVD reactor
A Sammak, W De Boer, LK Nanver
ECS Transactions 50 (9), 507, 2013
Arsenic-doped high-resistivity-silicon epitaxial layers for integrating low-capacitance diodes
A Sakic, TLM Scholtes, W Boer, N Golshani, J Derakhshandeh, ...
Materials 4 (12), 2092-2107, 2011
A simple model describing the kinetic of CVD deposition of pure-boron layers from diborane
V Mohammadi, WB De Boer, TLM Scholtes, LK Nanver
ECS Transactions, 45 (31), 2013, 2013
Modelling of electrical characteristics of ultrashallow pure amorphous boron p+n junctions
T Knežević, T Suligoj, A Šakić, LK Nanver
2012 Proceedings of the 35th International Convention MIPRO, 36-41, 2012
Solid-state backscattered-electron detector for sub-keV imaging in scanning electron microscopy
A Sakic, LK Nanver, G Van Veen, K Kooijman, P Vogelsang, ...
Technology Foundation STW, 2011
Applications of PureB and PureGaB ultrashallow junction technologies
LK Nanver, A Sammak, A Šakić, V Mohammadi, J Derakhshandeh, ...
2012 IEEE 11th International Conference on Solid-State and Integrated …, 2012
Aluminum-induced iso-epitaxy of silicon for low-temperature fabrication of centimeter-large p+ n junctions
A Sakic, L Qi, TLM Scholtes, J Van Der Cingel, LK Nanver
Solid-state electronics 84, 65-73, 2013
On the uniformity of pure-boron-layer depositions
V Mohammadi, WD De Boer, TLM Scholtes, A Sakic, C Heerkens, ...
Proceedings of the ICT. Open: Micro Technology and Micro Devices (SAFE), 1-3, 2011
Optimization of the perimeter doping of ultrashallow p+-n-n+ photodiodes
T Knezevic, T Suligoj, A Sakic, LK Nanver
2011 Proceedings of the 34th International Convention MIPRO, 2011
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