| 4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication C Lee, C Zhang, M Cantore, RM Farrell, SH Oh, T Margalith, JS Speck, ... Optics express 23 (12), 16232-16237, 2015 | 161 | 2015 |
| Hybrid tunnel junction contacts to III–nitride light-emitting diodes EC Young, BP Yonkee, F Wu, SH Oh, SP DenBaars, S Nakamura, ... Applied Physics Express 9 (2), 022102, 2016 | 145 | 2016 |
| Green semipolar (2021) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth Y Zhao, SH Oh, F Wu, Y Kawaguchi, S Tanaka, K Fujito, JS Speck, ... Applied Physics Express 6 (6), 062102, 2013 | 107 | 2013 |
| Impact of crystal orientation on the modulation bandwidth of InGaN/GaN light-emitting diodes M Monavarian, A Rashidi, AA Aragon, SH Oh, AK Rishinaramangalam, ... Applied Physics Letters 112 (4), 041104, 2018 | 69 | 2018 |
| High-power low-droop violet semipolar InGaN/GaN light-emitting diodes with thick active layer design DL Becerra, Y Zhao, SH Oh, CD Pynn, K Fujito, SP DenBaars, ... Applied Physics Letters 105 (17), 171106, 2014 | 68 | 2014 |
| Thermally enhanced blue light-emitting diode J Xue, Y Zhao, SH Oh, WF Herrington, JS Speck, SP DenBaars, ... Applied Physics Letters 107 (12), 121109, 2015 | 61 | 2015 |
| Semipolar III–nitride light-emitting diodes with negligible efficiency droop up to∼ 1 W SH Oh, BP Yonkee, M Cantore, RM Farrell, JS Speck, S Nakamura, ... Applied Physics Express 9 (10), 102102, 2016 | 43 | 2016 |
| Polarization field screening in thick (0001) InGaN/GaN single quantum well light-emitting diodes NG Young, RM Farrell, S Oh, M Cantore, F Wu, S Nakamura, ... Applied Physics Letters 108 (6), 061105, 2016 | 43 | 2016 |
| Dynamic characteristics of 410 nm semipolar III-nitride laser diodes with a modulation bandwidth of over 5 GHz C Lee, C Zhang, DL Becerra, S Lee, CA Forman, SH Oh, RM Farrell, ... Applied Physics Letters 109 (10), 101104, 2016 | 41 | 2016 |
| Explanation of low efficiency droop in semipolar (202¯ 1¯) InGaN/GaN LEDs through evaluation of carrier recombination coefficients M Monavarian, A Rashidi, A Aragon, SH Oh, M Nami, SP DenBaars, ... Optics express 25 (16), 19343-19353, 2017 | 40 | 2017 |
| Internal quantum efficiency and carrier dynamics in semipolar (20 21) InGaN/GaN light-emitting diodes S Okur, M Nami, AK Rishinaramangalam, SH Oh, SP DenBaars, S Liu, ... Optics express 25 (3), 2178-2186, 2017 | 34 | 2017 |
| Trade-off between bandwidth and efficiency in semipolar InGaN/GaN single- and multiple-quantum-well light-emitting diodes M Monavarian, A Rashidi, AA Aragon, M Nami, SH Oh, SP DenBaars, ... Applied Physics Letters 112 (19), 191102, 2018 | 33 | 2018 |
| High-power LEDs using Ga-doped ZnO current-spreading layers AJ Mughal, S Oh, A Myzaferi, S Nakamura, JS Speck, SP DenBaars Electronics Letters 52 (4), 304-306, 2016 | 18 | 2016 |
| 2.6 GHz high-speed visible light communication of 450 nm GaN laser diode by direct modulation C Lee, C Zhang, M Cantore, R Farrell, SH Oh, T Margalith, JS Speck, ... 2015 IEEE Summer Topicals Meeting Series (SUM), 112-113, 2015 | 18 | 2015 |
| Demonstration of phosphor-free polarized white light emission from monolithically integrated semipolar InGaN quantum wells SJ Kowsz, CD Pynn, SH Oh, RM Farrell, JS Speck, SP DenBaars, ... Applied Physics Letters 107 (10), 101104, 2015 | 17 | 2015 |
| Green semipolar III-nitride light-emitting diodes grown by limited area epitaxy CD Pynn, SJ Kowsz, SH Oh, H Gardner, RM Farrell, S Nakamura, ... Applied Physics Letters 109 (4), 041107, 2016 | 13 | 2016 |
| On the optical polarization properties of semipolar and InGaN/GaN quantum wells C Mounir, IL Koslow, T Wernicke, M Kneissl, LY Kuritzky, NL Adamski, ... Journal of Applied Physics 123 (8), 085705, 2018 | 10 | 2018 |
| High speed performance of III-nitride laser diode grown on (2021) semipolar plane for visible light communication C Lee, C Zhang, D Becerra, S Lee, SH Oh, RM Farrell, JS Speck, ... 2016 IEEE Photonics Conference (IPC), 809-810, 2016 | 7 | 2016 |
| Facet on a gallium and nitrogen containing laser diode JW Raring, H Huang, P Skahan, SH Oh, B Yonkee, A Sztein, Q Wei US Patent 10,559,939, 2020 | 6 | 2020 |
| Using band engineering to tailor the emission spectra of trichromatic semipolar InGaN light-emitting diodes for phosphor-free polarized white light emission SJ Kowsz, CD Pynn, SH Oh, RM Farrell, SP DenBaars, S Nakamura Journal of Applied Physics 120 (3), 033102, 2016 | 6 | 2016 |
