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Jose Coutinho
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Oxygen and dioxygen centers in Si and Ge: Density-functional calculations
J Coutinho, R Jones, PR Briddon, S Öberg
Physical Review B 62 (16), 10824, 2000
2712000
Oxygen vacancies, the optical band gap (Eg) and photocatalysis of hydroxyapatite: Comparing modelling with measured data
VS Bystrov, C Piccirillo, DM Tobaldi, PML Castro, J Coutinho, S Kopyl, ...
Applied Catalysis B: Environmental 196, 100-107, 2016
1752016
Inducing energy gaps in monolayer and bilayer graphene: local density approximation calculations
RM Ribeiro, NMR Peres, J Coutinho, PR Briddon
Physical Review B 78 (7), 075442, 2008
1482008
Tutorial: Junction spectroscopy techniques and deep-level defects in semiconductors
AR Peaker, VP Markevich, J Coutinho
Journal of Applied Physics 123 (16), 2018
1152018
I6nterstitial carbon-oxygen center and hydrogen related shallow thermal donors in Si
J Coutinho, R Jones, PR Briddon, S Öberg, LI Murin, VP Markevich, ...
Physical Review B 65 (1), 014109, 2001
1022001
First-principles calculations of structural, magnetic electronic and optical properties of rare-earth metals TbX (X= N, O, S, Se)
L Hasni, M Ameri, D Bensaid, I Ameri, S Mesbah, Y Al-Douri, J Coutinho
Journal of Superconductivity and Novel Magnetism 30, 3471-3479, 2017
992017
Electrical activity of chalcogen-hydrogen defects in silicon
J Coutinho, VJB Torres, R Jones, PR Briddon
Physical Review B 67 (3), 035205, 2003
972003
Trivacancy and trivacancy-oxygen complexes in silicon: Experiments and ab initio modeling
VP Markevich, AR Peaker, SB Lastovskii, LI Murin, J Coutinho, VJB Torres, ...
Physical Review B 80 (23), 235207, 2009
852009
Computational study of hydroxyapatite structures, properties and defects
VS Bystrov, J Coutinho, AV Bystrova, YD Dekhtyar, RC Pullar, A Poronin, ...
Journal of Physics D: Applied Physics 48 (19), 195302, 2015
832015
Optoelectronics and defect levels in hydroxyapatite by first-principles
LA Avakyan, EV Paramonova, J Coutinho, S Öberg, VS Bystrov, ...
The Journal of chemical physics 148 (15), 2018
782018
Electronic structure and Jahn–Teller instabilities in a single vacancy in Ge
J Coutinho, R Jones, VJB Torres, M Barroso, S Öberg, PR Briddon
Journal of Physics: Condensed Matter 17 (48), L521, 2005
722005
Donor-vacancy complexes in Ge: Cluster and supercell calculations
J Coutinho, S Öberg, VJB Torres, M Barroso, R Jones, PR Briddon
Physical Review B 73 (23), 235213, 2006
712006
Density-functional study of small interstitial clusters in Si: Comparison with experiments
A Carvalho, R Jones, J Coutinho, PR Briddon
Physical Review B 72 (15), 155208, 2005
702005
Development of radiation tolerant semiconductor detectors for the Super-LHC
M Moll, J Adey, A Al-Ajili, G Alfieri, PP Allport, M Artuso, S Assouak, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2005
642005
Radiation-hard semiconductor detectors for SuperLHC
M Bruzzi, J Adey, A Al-Ajili, P Alexandrov, G Alfieri, PP Allport, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2005
642005
Electrical charge state identification and control for the silicon vacancy in 4H-SiC
ME Bathen, A Galeckas, J Müting, HM Ayedh, U Grossner, J Coutinho, ...
npj Quantum Information 5 (1), 111, 2019
632019
The oxygen dimer in Si: Its relationship to the light-induced degradation of Si solar cells?
LI Murin, EA Tolkacheva, VP Markevich, AR Peaker, B Hamilton, ...
Applied Physics Letters 98 (18), 2011
622011
Self-interstitial in germanium
A Carvalho, R Jones, C Janke, JP Goss, PR Briddon, J Coutinho, S Öberg
Physical review letters 99 (17), 175502, 2007
572007
Formation energy and migration barrier of a Ge vacancy from ab initio studies
HM Pinto, J Coutinho, VJB Torres, S Öberg, PR Briddon
Materials science in semiconductor processing 9 (4-5), 498-502, 2006
562006
Identification of the mechanism responsible for the boron oxygen light induced degradation in silicon photovoltaic cells
M Vaqueiro-Contreras, VP Markevich, J Coutinho, P Santos, IF Crowe, ...
Journal of Applied Physics 125 (18), 2019
552019
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Articles 1–20