Energy-efficient high-accuracy switching method for SAR ADCs E Rahimi, M Yavari
Electronics Letters 50 (7), 499-501, 2014
73 2014 High-Efficiency SiGe-BiCMOS -Band Power Amplifiers Exploiting Current Clamping in the Common-Base Stage E Rahimi, J Zhao, F Svelto, A Mazzanti
IEEE Journal of Solid-State Circuits 54 (8), 2175-2185, 2019
24 2019 2.6 A SiGe BiCMOS E-band power amplifier with 22% PAE at 18dBm OP1dB and 8.5% at 6dB back-off leveraging current clamping in a common-base stage J Zhao, E Rahimi, F Svelto, A Mazzanti
2017 IEEE International Solid-State Circuits Conference (ISSCC), 42-43, 2017
24 2017 Analog front end of 50-Gb/s SiGe BiCMOS opto-electrical receiver in 3-D-integrated silicon photonics technology F Bozorgi, M Bruccoleri, E Rahimi, M Repossi, F Svelto, A Mazzanti
IEEE Journal of Solid-State Circuits 57 (1), 312-322, 2021
7 2021 -Band Class-B VCO in 22 nm FD-SOI With Inductive Source Degeneration of the Tail Current Source F Bozorgi, E Rahimi, M Cui, P Sen
IEEE Microwave and Wireless Components Letters 32 (11), 1351-1354, 2022
6 2022 70–90-GHz self-tuned polyphase filter for wideband I/Q LO generation in a 55-nm BiCMOS transmitter F Piri, E Rahimi, M Bassi, F Svelto, A Mazzanti
ESSCIRC 2019-IEEE 45th European Solid State Circuits Conference (ESSCIRC …, 2019
6 2019 A 22nm FD-SOI CMOS 2-way D-band Power Amplifier Achieving PAE of 7.7% at 9.6 dBm OP1dB and 3.1% at 6dB Back-off by Leveraging Adaptive Back-Gate Bias Technique E Rahimi, F Bozorgi, G Hueber
2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 175-178, 2022
4 2022 BiCMOS-Integrated Circuits for Millimeter-Wave Wireless Backhaul Transmitters A Mazzanti, L Iotti, MM Pirbazari, F Piri, E Rahimi, F Svelto
Analog Circuits for Machine Learning, Current/Voltage/Temperature Sensors …, 2022
2022 Low phase noise K-band VCO and high efficiency E-band power amplifier for mobile network backhaul in SiGe BiCMOS A Mazzanti, E Rahimi, N Lacaita, J Zhao, M Bassi, F Svelto
2018 International Conference on IC Design & Technology (ICICDT), 89-92, 2018
2018 A SiGe BiCMOS E-Band Power Amplifier with 22% PAE at 18dBm OP J Zhao, E Rahimi, F Svelto, A Mazzanti