| Surface reconstructions of GaAs (100) observed by scanning tunneling microscopy DK Biegelsen, RD Bringans, JE Northrup, LE Swartz Physical Review B 41 (9), 5701, 1990 | 1131* | 1990 |
| Electronic traps and Pb centers at the Si/SiO2 interface: Band‐gap energy distribution EH Poindexter, GJ Gerardi, ME Rueckel, PJ Caplan, NM Johnson, ... Journal of applied physics 56 (10), 2844-2849, 1984 | 467 | 1984 |
| Luminescence studies of plasma-deposited hydrogenated silicon RA Street, JC Knights, DK Biegelsen Physical Review B 18 (4), 1880, 1978 | 408 | 1978 |
| Self‐limiting oxidation for fabricating sub‐5 nm silicon nanowires HI Liu, DK Biegelsen, FA Ponce, NM Johnson, RFW Pease Applied physics letters 64 (11), 1383-1385, 1994 | 390 | 1994 |
| Detailed investigation of doping in hydrogenated amorphous silicon and germanium M Stutzmann, DK Biegelsen, RA Street Physical Review B 35 (11), 5666, 1987 | 366 | 1987 |
| Silicon surface passivation by hydrogen termination: A comparative study of preparation methods DB Fenner, DK Biegelsen, RD Bringans Journal of Applied Physics 66 (1), 419-424, 1989 | 362 | 1989 |
| Defect states in doped and compensated a-Si: H RA Street, DK Biegelsen, JC Knights Physical Review B 24 (2), 969, 1981 | 329 | 1981 |
| Apparatus and method for using electrostatic force to cause fluid movement SA Elrod, E Peeters, FE Torres, DK Biegelsen, JL Dunec, AG Bell US Patent 7,147,763, 2006 | 318 | 2006 |
| Stretchable interconnects using stress gradient films DK Biegelsen, D Fork, J Reich US Patent 6,743,982, 2004 | 309 | 2004 |
| Deuterium passivation of grain‐boundary dangling bonds in silicon thin films NM Johnson, DK Biegelsen, MD Moyer Applied Physics Letters 40 (10), 882-884, 1982 | 304 | 1982 |
| Hydrogen evolution and defect creation in amorphous Si: H alloys DK Biegelsen, RA Street, CC Tsai, JC Knights Physical Review B 20 (12), 4839, 1979 | 292 | 1979 |
| Density of gap states of silicon grain boundaries determined by optical absorption WB Jackson, NM Johnson, DK Biegelsen Applied Physics Letters 43 (2), 195-197, 1983 | 291 | 1983 |
| Characteristic electronic defects at the Si‐SiO2 interface NM Johnson, DK Biegelsen, MD Moyer, ST Chang, EH Poindexter, ... Applied Physics Letters 43 (6), 563-565, 1983 | 235 | 1983 |
| Photoinduced defects in chalcogenide glasses DK Biegelsen, RA Street Physical Review Letters 44 (12), 803, 1980 | 228 | 1980 |
| Luminescence and ESR studies of defects in hydrogenated amorphous silicon RA Street, DK Biegelsen Solid State Communications 33 (12), 1159-1162, 1980 | 220 | 1980 |
| Self‐limiting oxidation of Si nanowires HI Liu, DK Biegelsen, NM Johnson, FA Ponce, RFW Pease Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993 | 218 | 1993 |
| Initial stages of epitaxial growth of GaAs on (100) silicon DK Biegelsen, FA Ponce, AJ Smith, JC Tramontana Journal of applied physics 61 (5), 1856-1859, 1987 | 195 | 1987 |
| Microdevice valve structures to fluid control DK Biegelsen, WB Jackson, PCP Cheung, MH Yim, AA Berlin US Patent 5,971,355, 1999 | 188 | 1999 |
| Media path modules DK Biegelsen, LE Swartz, MPJ Fromherz, MH Yim US Patent 7,093,831, 2006 | 170 | 2006 |
| Hyperfine studies of dangling bonds in amorphous silicon DK Biegelsen, M Stutzmann Physical Review B 33 (5), 3006, 1986 | 169 | 1986 |
WARREN B JACKSONPrincipal ScientistVerified email at parc.com
