| ZnO grown by atomic layer deposition: A material for transparent electronics and organic heterojunctions E Guziewicz, M Godlewski, T Krajewski, Ł Wachnicki, A Szczepanik, ... Journal of Applied Physics 105 (12), 2009 | 140 | 2009 |
| AlGaN/GaN HEMT structures on ammono bulk GaN substrate P Kruszewski, P Prystawko, I Kasalynas, A Nowakowska-Siwinska, ... Semiconductor Science and Technology 29 (7), 075004, 2014 | 70 | 2014 |
| Vertically stacked non-volatile memory devices–material considerations M Godlewski, E Guziewicz, J Szade, A Wójcik-Głodowska, T Krajewski, ... Microelectronic Engineering 85 (12), 2434-2438, 2008 | 51 | 2008 |
| Energy state distributions of the Pb centers at the (100),(110), and (111) Si∕ SiO2 interfaces investigated by Laplace deep level transient spectroscopy L Dobaczewski, S Bernardini, P Kruszewski, PK Hurley, VP Markevich, ... Applied Physics Letters 92 (24), 2008 | 37 | 2008 |
| Crystal growth of HVPE-GaN doped with germanium M Iwinska, N Takekawa, VY Ivanov, M Amilusik, P Kruszewski, ... Journal of Crystal Growth 480, 102-107, 2017 | 30 | 2017 |
| Hafnium dioxide as a passivating layer and diffusive barrier in ZnO/Ag Schottky junctions obtained by atomic layer deposition TA Krajewski, G Luka, S Gieraltowska, AJ Zakrzewski, PS Smertenko, ... Applied Physics Letters 98 (26), 2011 | 29 | 2011 |
| Electrical parameters of ZnO films and ZnO-based junctions obtained by atomic layer deposition TA Krajewski, G Luka, L Wachnicki, AJ Zakrzewski, BS Witkowski, ... Semiconductor science and technology 26 (8), 085013, 2011 | 24 | 2011 |
| AlGaN/GaN field effect transistor with two lateral Schottky barrier gates towards resonant detection in sub-mm range P Sai, DB But, I Yahniuk, M Grabowski, M Sakowicz, P Kruszewski, ... Semiconductor Science and Technology 34 (2), 024002, 2019 | 21 | 2019 |
| Electrical properties of vertical GaN Schottky diodes on Ammono-GaN substrate P Kruszewski, P Prystawko, M Grabowski, T Sochacki, A Sidor, ... Materials Science in Semiconductor Processing 96, 132-136, 2019 | 17 | 2019 |
| Electrically controlled wire-channel GaN/AlGaN transistor for terahertz plasma applications G Cywiński, I Yahniuk, P Kruszewski, M Grabowski, ... Applied Physics Letters 112 (13), 2018 | 17 | 2018 |
| Fabrication and characterization of graphene heterostructures with nitride semiconductors for high frequency vertical transistors F Giannazzo, G Fisichella, G Greco, E Schilirò, I Deretzis, R Lo Nigro, ... physica status solidi (a) 215 (10), 1700653, 2018 | 16 | 2018 |
| Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition E Schilirò, F Giannazzo, C Bongiorno, S Di Franco, G Greco, F Roccaforte, ... Materials Science in Semiconductor Processing 97, 35-39, 2019 | 15 | 2019 |
| MBE grown GaN/AlGaN lateral Schottky barrier diodes for high frequency applications G Cywiński, K Szkudlarek, P Kruszewski, I Yahniuk, S Yatsunenko, ... Journal of Vacuum Science & Technology B 34 (2), 2016 | 13 | 2016 |
| Low frequency noise in two-dimensional lateral GaN/AlGaN Schottky diodes G Cywiński, K Szkudlarek, P Kruszewski, I Yahniuk, S Yatsunenko, ... Applied Physics Letters 109 (3), 2016 | 12 | 2016 |
| Trap levels in the atomic layer deposition-ZnO/GaN heterojunction—Thermal admittance spectroscopy studies TA Krajewski, P Stallinga, E Zielony, K Goscinski, P Kruszewski, ... Journal of Applied Physics 113 (19), 2013 | 12 | 2013 |
| Terahertz electroluminescence of shallow impurities in AlGaN/GaN heterostructures at 20 K and 110 K temperature I Grigelionis, J Jorudas, V Jakštas, V Janonis, I Kašalynas, P Prystawko, ... Materials Science in Semiconductor Processing 93, 280-283, 2019 | 10 | 2019 |
| Properties of AlGaN/GaN Ni/Au‐Schottky diodes on 2°‐off silicon carbide substrates P Kruszewski, M Grabowski, P Prystawko, A Nowakowska‐Siwinska, ... physica status solidi (a) 214 (4), 1600376, 2017 | 9 | 2017 |
| Vertical schottky diodes grown on low-dislocation density bulk GaN substrate P Kruszewski, J Jasinski, T Sochacki, M Bockowski, R Jachymek, ... Int. Workshop Nitride Semiconductor, 2014 | 9 | 2014 |
| Electron-and hole-related electrical activity of InAs/GaAs quantum dots P Kruszewski, L Dobaczewski, VP Markevich, C Mitchell, M Missous, ... Physica B: Condensed Matter 401, 580-583, 2007 | 9 | 2007 |
| Terahertz electroluminescence of shallow impurities in AlGaN/GaN heterostructures at temperatures above 80 k I Grigelionis, V Jakštas, V Janonis, I Kašalynas, P Prystawko, ... physica status solidi (b) 255 (5), 1700421, 2018 | 8 | 2018 |
