| A flexible 300 mm integrated Si MOS platform for electron-and hole-spin qubits exploration R Li, NID Stuyck, S Kubicek, J Jussot, BT Chan, FA Mohiyaddin, ... 2020 IEEE International Electron Devices Meeting (IEDM), 38.3. 1-38.3. 4, 2020 | 24 | 2020 |
| Modelling semiconductor spin qubits and their charge noise environment for quantum gate fidelity estimation M Shehata, G Simion, R Li, FA Mohiyaddin, D Wan, M Mongillo, ... arXiv preprint arXiv:2210.04539, 2022 | 13 | 2022 |
| Uniform Spin Qubit Devices with Tunable Coupling in an All-Silicon 300 mm Integrated Process NID Stuyck, R Li, C Godfrin, A Elsayed, S Kubicek, J Jussot, BT Chan, ... 2021 Symposium on VLSI Circuits, 1-2, 2021 | 11 | 2021 |
| Low charge noise quantum dots with industrial CMOS manufacturing A Elsayed, M Shehata, C Godfrin, S Kubicek, S Massar, Y Canvel, ... arXiv preprint arXiv:2212.06464, 2022 | 10 | 2022 |
| TCAD-Assisted MultiPhysics Modeling & Simulation for Accelerating Silicon Quantum Dot Qubit Design FA Mohiyaddin, G Simion, NID Stuyck, R Li, A Elsayed, M Shehata, ... 2020 International Conference on Simulation of Semiconductor Processes and …, 2020 | 3 | 2020 |
| A Scalable One Dimensional Silicon Qubit Array with Nanomagnets G Simion, FA Mohiyaddin, R Li, M Shehata, NID Stuyck, A Elsayed, ... 2020 IEEE International Electron Devices Meeting (IEDM), 30.2. 1-30.2. 4, 2020 | 2 | 2020 |
| Large-Scale 2D Spin-Based Quantum Processor with a Bi-Linear Architecture FA Mohiyaddin, R Li, S Brebels, G Simion, NID Stuyck, C Godfrin, ... 2021 IEEE International Electron Devices Meeting (IEDM), 27.5. 1-27.5. 4, 2021 | 1 | 2021 |
| Solid state qubits: how learning from CMOS fabrication can speed-up progress in Quantum Computing IP Radu, R Li, A Potočnik, T Ivanov, D Wan, S Kubicek, NID Stuyck, ... 2021 Symposium on VLSI Technology, 1-2, 2021 | 1 | 2021 |
| Quantum mechanical modeling of electron spins in realistic gate defined double quantum dots. M Shehata, G Simion, FA Mohiyaddin, R Li, A Elsayed, C Godfrin, D Wan, ... Bulletin of the American Physical Society, 2023 | | 2023 |
| Characterization of ultra-low charge noise Silicon MOS quantum dots fabricated in a full 300mm CMOS platform A Elsayed, M Shehata, C Godfrin, R Li, S Kubicek, S Massar, Y Canvel, ... Bulletin of the American Physical Society, 2023 | | 2023 |
| Si/SiGe quantum devices with full 300mm process C Godfrin, A Elsayed, M Shehata, R Li, G Simion, S Kubicek, S Massar, ... Bulletin of the American Physical Society, 2023 | | 2023 |
| Characterization of Silicon MOS quantum dots fabricated in a full 300mm CMOS process for spin qubit applications A Elsayed, R Li, C Godfrin, N Dumoulin Stuyck, S Kubicek, J Jussot, ... Bulletin of the American Physical Society, 2022 | | 2022 |
| Two-Level-Fluctuators as a source of 1/f noise and quantum gate errors in spin qubits M Shehata, G Simion, F Mohiyaddin, R Li, A El Sayed, N Stuyck, ... Bulletin of the American Physical Society, 2022 | | 2022 |
| Uniform Spin Qubit Devices in an All-Silicon 300 mm Integrated Process NI Stuyck, R Li, C Godfrin, A Elsayed, S Kubicek, J Jussot, BT Chan, ... arXiv preprint arXiv:2108.11317, 2021 | | 2021 |
| Uniform Spin Qubit Devices in an All-Silicon 300 mm Integrated Process NI Dumoulin Stuyck, R Li, C Godfrin, A Elsayed, S Kubicek, J Jussot, ... arXiv e-prints, arXiv: 2108.11317, 2021 | | 2021 |
| Silicon spin qubit development in a 300 mm integrated process N Dumoulin Stuyck, R Li, S Kubicek, F Mohiyaddin, B Govoreanu, ... Bulletin of the American Physical Society 65, 2020 | | 2020 |
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