Matthieu Berthomé
Matthieu Berthomé
Research Engineer at INRIA
Geverifieerd e-mailadres voor inria.fr
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Scaling of trigate junctionless nanowire MOSFET with gate length down to 13 nm
S Barraud, M Berthome, R Coquand, M Cassé, T Ernst, MP Samson, ...
IEEE Electron Device Letters 33 (9), 1225-1227, 2012
1872012
Revisited parameter extraction methodology for electrical characterization of junctionless transistors
DY Jeon, SJ Park, M Mouis, M Berthomé, S Barraud, GT Kim, G Ghibaudo
Solid-State Electronics 90, 86-93, 2013
892013
Junctionless silicon nanowire transistors for the tunable operation of a highly sensitive, low power sensor
E Buitrago, G Fagas, MFB Badia, YM Georgiev, M Berthomé, AM Ionescu
Sensors and Actuators B: Chemical 183, 1-10, 2013
382013
Electrical characterization and revisited parameter extraction methodology in junctionless transistors
DY Jeon, SJ Park, M Mouis, M Berthomé, S Barraud, GT Kim, G Ghibaudo
Proc. EuroSOI, 109-110, 2012
162012
Electron mobility extraction in triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5nm
M Najmzadeh, M Berthomé, JM Sallese, W Grabinski, AM Ionescu
Solid-State Electronics 98, 55-62, 2014
142014
Local volume depletion/accumulation in GAA Si nanowire junctionless nMOSFETs
M Najmzadeh, JM Sallese, M Berthomé, W Grabinski, AM Ionescu
IEEE Transactions on Electron Devices 59 (12), 3519-3526, 2012
112012
Application-oriented performance of RF CMOS technologies on flexible substrates
J Philippe, A Lecavelier, M Berthomé, JF Robillard, C Gaquière, ...
2015 IEEE International Electron Devices Meeting (IEDM), 15.7. 1-15.7. 4, 2015
92015
Physically-based, multi-architecture, analytical model for junctionless transistors
M Berthomé, S Barraud, A Ionescu, T Ernst
Ultimate Integration on Silicon (ULIS), 2011 12th International Conference …, 2011
62011
Focusing surface waves with an inhomogeneous metamaterial lens
MA Escobar, M Berthomé, C Ma, Z Liu
Applied optics 49 (7), A18-A22, 2010
52010
Mobility extraction assessment in GAA Si NW JL FETs with cross-section down to 5 nm
M Najmzadeh, JM Sallese, M Berthome, W Grabinski, AM Ionescu
2013 14th International Conference on Ultimate Integration on Silicon (ULIS …, 2013
42013
Mobility extraction assessment in GAA Si NW JL FETs with cross-section down to 5 nm
M Najmzadeh, JM Sallese, M Berthome, W Grabinski, AM Ionescu
2013 14th International Conference on Ultimate Integration on Silicon (ULIS …, 2013
42013
Large-area femtosecond laser ablation of Silicon to create membrane with high performance CMOS-SOI RF functions
A Bhaskar, J Philippe, M Berthomé, E Okada, JF Robillard, D Gloria, ...
2018 7th Electronic System-Integration Technology Conference (ESTC), 1-6, 2018
32018
Ultra-foldable/stretchable wideband RF interconnects using laser ablation of metal film on a flexible substrate
S Bouaziz, M Berthomé, JF Robillard, E Dubois
2015 European Microwave Conference (EuMC), 869-872, 2015
32015
Improved performance of flexible CMOS technology using ultimate thinning and transfer bonding
E Dubois, J Philippe, M Berthomé, JF Robillard, C Gaquière, F Danneville, ...
2016 6th Electronic System-Integration Technology Conference (ESTC), 1-5, 2016
12016
Cost Effective Laser Structuration of Optical Waveguides on Thin Glass Interposer
JM Boucaud, FE Ayi-Yovo, Q Hivin, M Berthomé, C Durand, F Gianesello, ...
Journal of Lightwave Technology 35 (20), 4445-4450, 2017
2017
Ultrashort pulse laser processing as enabling technology for selectivity and ablation challenges in microelectronics
ED Matthieu Berthomé, Quentin Hivin, Jean-François Robillard
E-MRS 2016, 2016
2016
2011 12th International Conference on Ultimate Integration on Silicon (ULIS 2011)
M Berthomé, S Barraud, A Ionescu, T Ernst
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Artikelen 1–17