Single-spin qubits in isotopically enriched silicon at low magnetic field R Zhao, T Tanttu, Y Tan., K, B Hensen, KW Chan, JCC Hwang, RCC Leon, ...
Nature Communications 10 (5500), 2019
92 2019 An accurate single-electron pump based on a highly tunable silicon quantum dot A Rossi, T Tanttu, KY Tan, I Iisakka, R Zhao, KW Chan, GC Tettamanzi, ...
Nano letters 14 (6), 3405-3411, 2014
92 2014 Pauli Blockade in Silicon Quantum Dots with Spin-Orbit Control AE Seedhouse, T Tanttu, RCC Leon, R Zhao, KY Tan, B Hensen, ...
P R X Quantum 2, 010303, 2021
76 2021 Thermal-error regime in high-accuracy gigahertz single-electron pumping R Zhao, A Rossi, SP Giblin, JD Fletcher, FE Hudson, M Möttönen, ...
Physical Review Applied 8 (4), 044021, 2017
57 2017 Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor A Rossi, R Zhao, AS Dzurak, MF Gonzalez-Zalba
Applied Physics Letters 110 (21), 2017
34 2017 Merged-Element Transmon R Zhao, S Park, T Zhao, M Bal, CRH McRae, J Long, DP Pappas
Physical Review Applied 14 (6), 064006, 2020
31 2020 A universal quantum gate set for transmon qubits with strong ZZ interactions J Long, T Zhao, M Bal, R Zhao, GS Barron, H Ku, JA Howard, X Wu, ...
arXiv preprint arXiv:2103.12305, 2021
18 2021 Cryogenic microwave loss in epitaxial Al/GaAs/Al trilayers for superconducting circuits CRH McRae, A McFadden, R Zhao, H Wang, JL Long, T Zhao, S Park, ...
Journal of Applied Physics 129 (2), 2021
16 2021 Waiting time distributions in a two-level fluctuator coupled to a superconducting charge detector M Jenei, E Potanina, R Zhao, KY Tan, A Rossi, T Tanttu, KW Chan, ...
Physical Review Research 1 (3), 033163, 2019
16 2019 A planar Al-Si Schottky barrier metal–oxide–semiconductor field effect transistor operated at cryogenic temperatures WE Purches, A Rossi, R Zhao, S Kafanov, TL Duty, AS Dzurak, S Rogge, ...
Applied Physics Letters 107 (6), 2015
12 2015 Overlap junctions for superconducting quantum electronics and amplifiers M Bal, J Long, R Zhao, H Wang, S Park, CRH McRae, T Zhao, RE Lake, ...
Applied Physics Letters 118 (11), 2021
10 2021 Towards merged-element transmons using silicon fins: The FinMET A Goswami, AP McFadden, T Zhao, H Inbar, JT Dong, R Zhao, ...
Applied Physics Letters 121 (6), 2022
6 2022 Epitaxial Al/GaAs/Al tri-layers fabricated using a novel wafer-bonding technique AP McFadden, A Goswami, M Seas, CRH McRae, R Zhao, DP Pappas, ...
Journal of Applied Physics 128 (11), 2020
3 2020 Dielectric loss in epitaxial Al/GaAs/Al trilayers for superconducting circuits CRH McRae, A McFadden, R Zhao, H Wang, JL Long, T Zhao, S Park, ...
arXiv e-prints, arXiv: 2009.10101, 2020
3 2020 Gate-Based Spin Readout of Hole Quantum Dots with Site-Dependent A Russell, A Zotov, R Zhao, AS Dzurak, M Fernando Gonzalez-Zalba, ...
Physical Review Applied 19 (4), 044039, 2023
2 2023 Superconducting charge sensor coupled to an electron layer in silicon M Jenei, R Zhao, KY Tan, T Tanttu, KW Chan, Y Sun, V Sevriuk, F Hudson, ...
arXiv preprint arXiv:1909.11976, 2019
1 2019 Fabrication and characterization of Josephson parametric amplifiers based on micron-scale Josephson junctions M Bal, J Long, R Zhao, H Wang, S Park, CR McRae, T Zhao, R Lake, ...
APS March Meeting Abstracts 2022, S38. 003, 2022
2022 Investigation of geometrical effects on merged-element transmon S Park, R Zhao, CR McRae, A McFadden, M Bal, T Zhao, J Howard, ...
APS March Meeting Abstracts 2021, V30. 013, 2021
2021 Investigating the speed limit of two-qubit entangling gates with superconducting qubits J Howard, J Long, M Bal, R Zhao, H Wang, T Zhao, D Pappas, Z Gong, ...
APS March Meeting Abstracts 2021, S30. 010, 2021
2021 Overlap junction-based Josephson parametric amplifiers (O-JPA) M Bal, J Long, R Zhao, H Wang, CR McRae, R Lake, S Park, X Wu, HS Ku, ...
Bulletin of the American Physical Society 65, 2020
2020 
Andrew DzurakScientia Professor in Electrical Engineering, UNSWGeverifieerd e-mailadres voor unsw.edu.au
