| Defects and reliability of GaN‐based LEDs: review and perspectives M Buffolo, A Caria, F Piva, N Roccato, C Casu, C De Santi, N Trivellin, ... physica status solidi (a) 219 (8), 2100727, 2022 | 46 | 2022 |
| GaN-based laser wireless power transfer system C De Santi, M Meneghini, A Caria, E Dogmus, M Zegaoui, F Medjdoub, ... Materials 11 (1), 153, 2018 | 40 | 2018 |
| Trapping and Detrapping Mechanisms in β-Ga₂O₃ Vertical FinFETs Investigated by Electro-Optical Measurements E Fabris, C De Santi, A Caria, W Li, K Nomoto, Z Hu, D Jena, HG Xing, ... IEEE Transactions on Electron Devices 67 (10), 3954-3959, 2020 | 33 | 2020 |
| Degradation of InGaN-based LEDs: Demonstration of a recombination-dependent defect-generation process N Renso, C De Santi, A Caria, F Dalla Torre, L Zecchin, G Meneghesso, ... Journal of Applied Physics 127 (18), 2020 | 31 | 2020 |
| Defect incorporation in In-containing layers and quantum wells: experimental analysis via deep level profiling and optical spectroscopy F Piva, C De Santi, A Caria, C Haller, JF Carlin, M Mosca, G Meneghesso, ... Journal of Physics D: Applied Physics 54 (2), 025108, 2020 | 23 | 2020 |
| Excitation intensity and temperature-dependent performance of InGaN/GaN multiple quantum wells photodetectors A Caria, C De Santi, E Dogmus, F Medjdoub, E Zanoni, G Meneghesso, ... Electronics 9 (11), 1840, 2020 | 16 | 2020 |
| Evidence of optically induced degradation in gallium nitride optoelectronic devices C De Santi, A Caria, N Renso, E Dogmus, M Zegaoui, F Medjdoub, ... Applied Physics Express 11 (11), 111002, 2018 | 13 | 2018 |
| Breakdown walkout in polarization-doped vertical GaN diodes E Fabris, C De Santi, A Caria, K Nomoto, Z Hu, W Li, X Gao, D Jena, ... IEEE Transactions on Electron Devices 66 (11), 4597-4603, 2019 | 11 | 2019 |
| Degradation mechanisms of InGaN visible LEDs and AlGaN UV LEDs C De Santi, A Caria, F Piva, G Meneghesso, E Zanoni, M Meneghini Reliability of Semiconductor Lasers and Optoelectronic Devices, 273-312, 2021 | 9 | 2021 |
| Review on the degradation of GaN-based lateral power transistors C De Santi, M Buffolo, I Rossetto, T Bordignon, E Brusaterra, A Caria, ... e-Prime-Advances in Electrical Engineering, Electronics and Energy 1, 100018, 2021 | 7 | 2021 |
| GaN-based high-periodicity multiple quantum well solar cells: Degradation under optical and electrical stress A Caria, C De Santi, F Zamperetti, X Huang, H Fu, H Chen, Y Zhao, ... Microelectronics Reliability 114, 113802, 2020 | 7 | 2020 |
| Degradation of InGaN-based MQW solar cells under 405 nm laser excitation C De Santi, M Meneghini, A Caria, E Dogmus, M Zegaoui, F Medjdoub, ... Microelectronics Reliability 76, 575-578, 2017 | 7 | 2017 |
| Role of p-GaN layer thickness in the degradation of InGaN-GaN MQW solar cells under 405 nm laser excitation M Nicoletto, A Caria, C De Santi, M Buffolo, X Huang, H Fu, H Chen, ... Microelectronics Reliability 138, 114727, 2022 | 6 | 2022 |
| Quantum efficiency of InGaN–GaN multi-quantum well solar cells: Experimental characterization and modeling A Caria, M Nicoletto, C De Santi, M Buffolo, X Huang, H Fu, H Chen, ... Journal of Applied Physics 131 (22), 2022 | 6 | 2022 |
| GaN-based solar cells degradation kinetics investigated at high temperature under high-intensity 405nm optical stress A Caria, C De Santi, M Nicoletto, M Buffolo, X Huang, H Fu, H Chen, ... Gallium Nitride Materials and Devices XVII 12001, 44-51, 2022 | 4 | 2022 |
| Optically Induced Degradation Due to Thermally Activated Diffusion in GaN-Based InGaN/GaN MQW Solar Cells M Nicoletto, A Caria, C De Santi, M Buffolo, X Huang, H Fu, H Chen, ... IEEE Transactions on Electron Devices 70 (3), 1115-1120, 2023 | 3 | 2023 |
| Photon-induced degradation of InGaN-based LED in open-circuit conditions investigated by steady-state photocapacitance and photoluminescence A Caria, C De Santi, M Buffolo, G Meneghesso, E Zanoni, M Meneghini Journal of Applied Physics 131 (4), 2022 | 3 | 2022 |
| Characterization and Modeling of quantum efficiency InGaN-GaN Multi-Quantum Well (MQW) solar cells M Nicoletto, A Caria, C De Santi, M Buffolo, X Huang, H Fu, H Chen, ... Proceedings of WOCSDICE-EXMATEC 2022, Ponta Delgada, Azores, Portugal, 2022 | 3 | 2022 |
| Impact of residual carbon on avalanche voltage and stability of polarization-induced vertical GaN pn junction E Fabris, C De Santi, A Caria, K Mukherjee, K Nomoto, Z Hu, W Li, X Gao, ... IEEE Transactions on Electron Devices 67 (10), 3978-3982, 2020 | 3 | 2020 |
| Degradation and recovery of high-periodicity InGaN/GaN MQWs under optical stress in short-circuit condition A Caria, C De Santi, F Zamperetti, X Huang, H Fu, H Chen, Y Zhao, ... Gallium Nitride Materials and Devices XV 11280, 36-44, 2020 | 3 | 2020 |
