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Koen Martens
Koen Martens
imec / KU Leuven
Verified email at imec.be
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Cited by
Year
On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substrates
K Martens, CO Chui, G Brammertz, B De Jaeger, D Kuzum, M Meuris, ...
IEEE Transactions on Electron Devices 55 (2), 547-556, 2008
4532008
Record ION/IOFF performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability
J Mitard, B De Jaeger, FE Leys, G Hellings, K Martens, G Eneman, ...
International Electron Devices Meeting-IEDM, 1-4, 2008
1482008
Record ION/IOFF performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability
J Mitard, B De Jaeger, F Leys, G Hellings, K Martens, G Eneman, ...
International Electron Devices Meeting-IEDM, 873-876, 2008
1482008
Ion-implantation issues in the formation of shallow junctions in germanium
E Simoen, A Satta, A D’Amore, T Janssens, T Clarysse, K Martens, ...
Materials science in semiconductor processing 9 (4-5), 634-639, 2006
1482006
Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures
G Brammertz, K Martens, S Sioncke, A Delabie, M Caymax, M Meuris, ...
Applied Physics Letters 91 (13), 2007
1402007
Capacitance-voltage characterization of GaAs–Al2O3 interfaces
G Brammertz, HC Lin, K Martens, D Mercier, S Sioncke, A Delabie, ...
Applied Physics Letters 93 (18), 2008
1362008
High-performance deep submicron Ge pMOSFETs with halo implants
G Nicholas, B De Jaeger, DP Brunco, P Zimmerman, G Eneman, ...
IEEE Transactions on Electron Devices 54 (9), 2503-2511, 2007
1202007
Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition
G Rampelberg, M Schaekers, K Martens, Q Xie, D Deduytsche, ...
Applied Physics Letters 98 (16), 2011
1092011
New interface state density extraction method applicable to peaked and high-density distributions for Ge MOSFET development
K Martens, B De Jaeger, R Bonzom, J Van Steenbergen, M Meuris, ...
IEEE electron device letters 27 (5), 405-408, 2006
942006
Metal‐Insulator Transition in ALD VO2 Ultrathin Films and Nanoparticles: Morphological Control
AP Peter, K Martens, G Rampelberg, M Toeller, JM Ablett, J Meersschaut, ...
Advanced Functional Materials 25 (5), 679-686, 2015
882015
The Fermi-level efficiency method and its applications on high interface trap density oxide-semiconductor interfaces
HC Lin, G Brammertz, K Martens, G De Valicourt, L Negre, WE Wang, ...
Applied Physics Letters 94 (15), 2009
862009
Capacitance–voltage characterization of GaAs–oxide interfaces
G Brammertz, HC Lin, K Martens, D Mercier, C Merckling, J Penaud, ...
Journal of the Electrochemical Society 155 (12), H945, 2008
852008
Electrical properties of III-V/oxide interfaces
G Brammertz, HC Lin, K Martens, AR Alian, C Merckling, J Penaud, ...
ECS transactions 19 (5), 375, 2009
832009
Multiring circular transmission line model for ultralow contact resistivity extraction
H Yu, M Schaekers, T Schram, E Rosseel, K Martens, S Demuynck, ...
IEEE Electron Device Letters 36 (6), 600-602, 2015
762015
In situ X-ray diffraction study of the controlled oxidation and reduction in the V–O system for the synthesis of VO 2 and V 2 O 3 thin films
G Rampelberg, B De Schutter, W Devulder, K Martens, I Radu, ...
Journal of Materials Chemistry C 3 (43), 11357-11365, 2015
762015
Enabling the high-performance InGaAs/Ge CMOS: A common gate stack solution
D Lin, G Brammertz, S Sioncke, C Fleischmann, A Delabie, K Martens, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
762009
Interface control of high-k gate dielectrics on Ge
M Caymax, M Houssa, G Pourtois, F Bellenger, K Martens, A Delabie, ...
Applied surface science 254 (19), 6094-6099, 2008
762008
Impact of weak Fermi-level pinning on the correct interpretation of III-V MOS CV and GV characteristics
K Martens, W Wang, K De Keersmaecker, G Borghs, G Groeseneken, ...
Microelectronic engineering 84 (9-10), 2146-2149, 2007
742007
Suitability of high-k gate oxides for III–V devices: A PBTI study in In0.53Ga0.47As devices with Al2O3
J Franco, A Alian, B Kaczer, D Lin, T Ivanov, A Pourghaderi, K Martens, ...
2014 IEEE International Reliability Physics Symposium, 6A. 2.1-6A. 2.6, 2014
722014
Switching mechanism in two-terminal vanadium dioxide devices
IP Radu, B Govoreanu, S Mertens, X Shi, M Cantoro, M Schaekers, ...
Nanotechnology 26 (16), 165202, 2015
712015
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