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Youngtek Oh
Youngtek Oh
Other names오 영택
Samsung Advanced Institute of Technology
Verified email at samsung.com - Homepage
Title
Cited by
Cited by
Year
Nanoscale control of phonon excitations in graphene
HW Kim, W Ko, JY Ku, I Jeon, D Kim, H Kwon, Y Oh, S Ryu, Y Kuk, ...
Nature communications 6 (1), 7528, 2015
552015
Control of molecular rotors by selection of anchoring sites
HW Kim, M Han, HJ Shin, S Lim, Y Oh, K Tamada, M Hara, Y Kim, ...
Physical review letters 106 (14), 146101, 2011
352011
Highly Efficient Nonvolatile Magnetization Switching and Multi‐Level States by Current in Single Van der Waals Topological Ferromagnet Fe3GeTe2
K Zhang, Y Lee, MJ Coak, J Kim, S Son, I Hwang, DS Ko, Y Oh, I Jeon, ...
Advanced Functional Materials 31 (49), 2105992, 2021
222021
Characterization of Edge Contact: Atomically Resolved Semiconductor–Metal Lateral Boundary in MoS2
H Kwon, K Lee, J Heo, Y Oh, H Lee, S Appalakondaiah, W Ko, HW Kim, ...
Advanced Materials 29 (41), 1702931, 2017
212017
Electric field effect on the electronic structure of 2D Y2C electride
Y Oh, J Lee, J Park, H Kwon, I Jeon, SW Kim, G Kim, S Park, SW Hwang
2D Materials 5 (3), 035005, 2018
202018
Unraveling the structural and electronic properties of graphene/Ge (110)
HW Kim, W Ko, WJ Joo, Y Cho, Y Oh, JY Ku, I Jeon, S Park, SW Hwang
The Journal of Physical Chemistry Letters 9 (24), 7059-7063, 2018
182018
Hard ferromagnetic van-der-Waals metal (Fe, Co) 3GeTe2: a new platform for the study of low-dimensional magnetic quantum criticality
I Hwang, MJ Coak, N Lee, DS Ko, Y Oh, I Jeon, S Son, K Zhang, J Kim, ...
Journal of Physics: Condensed Matter 31 (50), 50LT01, 2019
152019
Electronic structure and switching behavior of the metastable silicene domain boundary
Y Oh, Y Cho, H Kwon, J Lee, I Jeon, W Ko, HW Kim, JY Ku, G Kim, H Suh, ...
Applied Physics Letters 110 (26), 2017
142017
Local potential fluctuation of topological surface states in Bi1. 5Sb0. 5Te1. 7Se1. 3 observed by Landau level spectroscopy
W Ko, J Park, I Jeon, HW Kim, H Kwon, Y Oh, JS Kim, H Suh, SW Hwang, ...
Applied Physics Letters 108 (8), 2016
132016
Tuning magnetostatic interaction in single-crystalline nanodot arrays with in-plane easy axes
J Seo, TH Kim, SH Chung, Y Oh, JH Choi, Y Kuk
Applied Physics Letters 96 (7), 2010
112010
Quasiparticle interference and impurity resonances on WTe2
H Kwon, T Jeong, S Appalakondaiah, Y Oh, I Jeon, H Min, S Park, ...
Nano Research 13, 2534-2540, 2020
102020
Tip-Induced Molecule Anchoring in Ni–Phthalocyanine on Au (111) Substrate
YC Jeong, SY Song, Y Kim, Y Oh, J Kang, J Seo
The Journal of Physical Chemistry C 119 (49), 27721-27726, 2015
102015
First-principles study of two-dimensional electron gas on a layered electride surface
J Chae, J Lee, Y Oh, G Kim
Physical Review B 104 (12), 125403, 2021
92021
Silicene material layer and electronic device having the same
OH Youngtek
US Patent 9,647,101, 2017
62017
Strain relaxation induced spin reorientation in Fe films on W (110)
J Seo, Y Oh, TH Kim, Y Kuk
Applied Physics Letters 99 (18), 2011
52011
Mapping subsurface structure through atomically thin bismuth films on Si (1 1 1)−(7× 7) with scanning tunneling microscope
Y Oh, J Seo, H Suh, JS Seo, SJ Kahng, Y Kuk
Surface science 602 (21), 3352-3357, 2008
52008
Multi-qubit device and quantum computer including the same
K Hyeokshin, OH Youngtek, J Insu
US Patent 9,882,112, 2018
42018
Switchable Chemical‐Bond Reorganization for the Stable Charge Trapping in Amorphous Silicon Nitride
WI Choi, WJ Son, R Dronskowski, Y Oh, SY Yang, U Kwon, DS Kim
Advanced Materials, 2308054, 2023
32023
Method of forming nanostructure, method of manufacturing semiconductor device using the same, and semiconductor device including nanostructure
OH Youngtek, K Hyeokshin, SUH Hwansoo, J Insu
US Patent 9,899,473, 2018
32018
Vertical nonvolatile memory device including memory cell string
LEE Minhyun, KIM Taein, OH Youngtek, S Hyeonjin, C Lee
US Patent App. 17/708,362, 2022
22022
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