B. Gunnar Malm
B. Gunnar Malm
Professor in Integrated Devices and Circuits, KTH Royal Institute of Technology
Verified email at - Homepage
Cited by
Cited by
Spin-torque and spin-Hall nano-oscillators
T Chen, RK Dumas, A Eklund, PK Muduli, A Houshang, AA Awad, ...
Proceedings of the IEEE 104 (10), 1919-1945, 2016
The VLSI handbook
WK Chen
CRC press, 1999
Mutually synchronized bottom-up multi-nanocontact spin–torque oscillators
S Sani, J Persson, SM Mohseni, Y Pogoryelov, PK Muduli, A Eklund, ...
Nature communications 4 (1), 2731, 2013
500Bipolar Integrated OR/NOR Gate in 4H-SiC
L Lanni, BG Malm, M Östling, CM Zetterling
IEEE Electron Device Letters 34 (9), 1091-1093, 2013
A monolithic, 500 C operational amplifier in 4H-SiC bipolar technology
R Hedayati, L Lanni, S Rodriguez, BG Malm, A Rusu, CM Zetterling
IEEE Electron Device Letters 35 (7), 693-695, 2014
Modeling and characterization of current gain versus temperature in 4H-SiC power BJTs
B Buono, R Ghandi, M Domeij, BG Malm, CM Zetterling, M Ostling
IEEE Transactions on Electron Devices 57 (3), 704-711, 2010
High-voltage 4H-SiC PiN diodes with etched junction termination extension
R Ghandi, B Buono, M Domeij, G Malm, CM Zetterling, M Ostling
IEEE Electron Device Letters 30 (11), 1170-1172, 2009
Direct observation and imaging of a spin-wave soliton with p-like symmetry
S Bonetti, R Kukreja, Z Chen, F Macià, JM Hernàndez, A Eklund, ...
Nature communications 6 (1), 8889, 2015
Design and characterization of high-temperature ECL-based bipolar integrated circuits in 4H-SiC
L Lanni, R Ghandi, BG Malm, CM Zetterling, M Ostling
IEEE transactions on electron devices 59 (4), 1076-1083, 2012
Comprehensive study on low-frequency noise and mobility in Si and SiGe pMOSFETs with high-/spl kappa/gate dielectrics and TiN gate
M von Haartman, BG Malm, M Ostling
IEEE transactions on electron devices 53 (4), 836-843, 2006
1/f noise in Si and si/sub 0.7/Ge/sub 0.3/pMOSFETs
M von Haartman, AC Lindgren, PE Hellstrom, BG Malm, SL Zhang, ...
IEEE Transactions on Electron Devices 50 (12), 2513-2519, 2003
SB-MOSFETs in UTB-SOI featuring PtSi source/drain with dopant segregation
Z Zhang, Z Qiu, PE Hellstrom, G Malm, J Olsson, J Lu, M Ostling, ...
IEEE electron device letters 29 (1), 125-127, 2007
Lateral encroachment of Ni-silicides in the source/drain regions on ultrathin silicon-on-insulator
J Seger, PE Hellström, J Lu, BG Malm, M von Haartman, M Östling, ...
Applied Physics Letters 86 (25), 253507, 2005
Dependence of the colored frequency noise in spin torque oscillators on current and magnetic field
A Eklund, S Bonetti, SR Sani, S Majid Mohseni, J Persson, S Chung, ...
Applied Physics Letters 104 (9), 092405, 2014
A robust spacer gate process for deca-nanometer high-frequency MOSFETs
J Hållstedt, PE Hellström, Z Zhang, BG Malm, J Edholm, J Lu, SL Zhang, ...
Microelectronic Engineering 83 (3), 434-439, 2006
Bipolar integrated circuits in SiC for extreme environment operation
CM Zetterling, A Hallén, R Hedayati, S Kargarrazi, L Lanni, BG Malm, ...
Semiconductor Science and Technology 32 (3), 034002, 2017
Influence of emitter width and emitter–base distance on the current gain in 4H-SiC power BJTs
B Buono, R Ghandi, M Domeij, BG Malm, CM Zetterling, M Östling
IEEE transactions on electron devices 57 (10), 2664-2670, 2010
Carrier transport through a dry-etched InP-based two-dimensional photonic crystal
A Berrier, M Mulot, G Malm, M Östling, S Anand
Journal of applied physics 101 (12), 123101, 2007
3D Free‐Form Patterning of Silicon by Ion Implantation, Silicon Deposition, and Selective Silicon Etching
AC Fischer, LM Belova, YGM Rikers, BG Malm, HH Radamson, ...
Advanced Functional Materials 22 (19), 4004-4008, 2012
A low-complexity 62-GHz fT SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget
JV Grahn, H Fosshaug, M Jargelius, P Jönsson, M Linder, BG Malm, ...
Solid-State Electronics 44 (3), 549-554, 2000
The system can't perform the operation now. Try again later.
Articles 1–20