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Renrong Liang
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Epidermis microstructure inspired graphene pressure sensor with random distributed spinosum for high sensitivity and large linearity
Y Pang, K Zhang, Z Yang, S Jiang, Z Ju, Y Li, X Wang, D Wang, M Jian, ...
ACS nano 12 (3), 2346-2354, 2018
6152018
Multilayer graphene epidermal electronic skin
Y Qiao, Y Wang, H Tian, M Li, J Jian, Y Wei, Y Tian, DY Wang, Y Pang, ...
ACS nano 12 (9), 8839-8846, 2018
2762018
Ferroelastic switching in a layered-perovskite thin film
C Wang, X Ke, J Wang, R Liang, Z Luo, Y Tian, D Yi, Q Zhang, J Wang, ...
Nature communications 7 (1), 10636, 2016
1122016
MoS2 Negative‐Capacitance Field‐Effect Transistors with Subthreshold Swing below the Physics Limit
X Liu, R Liang, G Gao, C Pan, C Jiang, Q Xu, J Luo, X Zou, Z Yang, L Liao, ...
Advanced Materials 30 (28), 1800932, 2018
1032018
Application of plasmonic silver island films in thin-film silicon solar cells
R Santbergen, TL Temple, R Liang, AHM Smets, R Van Swaaij, M Zeman
Journal of Optics 14 (2), 024010, 2012
1032012
Heteromaterial gate tunnel field effect transistor with lateral energy band profile modulation
N Cui, R Liang, J Xu
Applied Physics Letters 98 (14), 2011
982011
Enhancing light emission of ZnO‐nanofilm/Si‐micropillar heterostructure arrays by piezo‐phototronic effect
X Li, M Chen, R Yu, T Zhang, D Song, R Liang, Q Zhang, S Cheng, ...
Advanced Materials 27 (30), 4447-4453, 2015
952015
Ultrafast photodetector by integrating perovskite directly on silicon wafer
X Geng, F Wang, H Tian, Q Feng, H Zhang, R Liang, Y Shen, Z Ju, ...
ACS nano 14 (3), 2860-2868, 2020
892020
Tuning light emission of a pressure-sensitive silicon/ZnO nanowires heterostructure matrix through piezo-phototronic effects
M Chen, C Pan, T Zhang, X Li, R Liang, ZL Wang
ACS nano 10 (6), 6074-6079, 2016
852016
Wafer-Scale High-Throughput Ordered Arrays of Si and Coaxial Si/Si1–xGex Wires: Fabrication, Characterization, and Photovoltaic Application
C Pan, Z Luo, C Xu, J Luo, R Liang, G Zhu, W Wu, W Guo, X Yan, J Xu, ...
ACS nano 5 (8), 6629-6636, 2011
762011
X-Ray Detector Based on All-Inorganic Lead-Free Cs2AgBiBr6 Perovskite Single Crystal
H Zhang, Z Gao, R Liang, X Zheng, X Geng, Y Zhao, D Xie, J Hong, ...
IEEE Transactions on Electron Devices 66 (5), 2224-2229, 2019
662019
Atomic threshold-switching enabled MoS2 transistors towards ultralow-power electronics
Q Hua, G Gao, C Jiang, J Yu, J Sun, T Zhang, B Gao, W Cheng, R Liang, ...
Nature communications 11 (1), 6207, 2020
642020
Ultrahigh sensitive near-infrared photodetectors based on MoTe2/germanium heterostructure
W Chen, R Liang, S Zhang, Y Liu, W Cheng, C Sun, J Xu
Nano Research 13, 127-132, 2020
612020
Switching dynamics of ferroelectric HfO2-ZrO2 with various ZrO2 contents
Y Li, J Li, R Liang, R Zhao, B Xiong, H Liu, H Tian, Y Yang, TL Ren
Applied Physics Letters 114 (14), 2019
602019
Flexible light emission diode arrays made of transferred Si microwires-ZnO nanofilm with piezo-phototronic effect enhanced lighting
X Li, R Liang, J Tao, Z Peng, Q Xu, X Han, X Wang, C Wang, J Zhu, C Pan, ...
ACS nano 11 (4), 3883-3889, 2017
602017
Investigation of negative capacitance gate-all-around tunnel FETs combining numerical simulation and analytical modeling
C Jiang, R Liang, J Xu
IEEE Transactions on Nanotechnology 16 (1), 58-67, 2016
592016
A two-dimensional analytical model for short channel junctionless double-gate MOSFETs
C Jiang, R Liang, J Wang, J Xu
AIP Advances 5 (5), 2015
582015
A ferroelectric thin film transistor based on annealing-free HfZrO film
Y Li, R Liang, J Wang, Y Zhang, H Tian, H Liu, S Li, W Mao, Y Pang, Y Li, ...
IEEE Journal of the Electron Devices Society 5 (5), 378-383, 2017
482017
Encapsulated X-ray detector enabled by all-inorganic lead-free perovskite film with high sensitivity and low detection limit
H Zhang, G Dun, Q Feng, R Zhao, R Liang, Z Gao, T Hirtz, M Chen, ...
IEEE Transactions on Electron Devices 67 (8), 3191-3198, 2020
452020
A two-dimensional analytical model for tunnel field effect transistor and its applications
N Cui, L Liu, Q Xie, Z Tan, R Liang, J Wang, J Xu
Japanese Journal of Applied Physics 52 (4R), 044303, 2013
422013
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