Ryoichi Ishihara
Ryoichi Ishihara
Delft University of Technology, QuTech
Verified email at - Homepage
Cited by
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Interfacing spin qubits in quantum dots and donors—hot, dense, and coherent
LMK Vandersypen, H Bluhm, JS Clarke, AS Dzurak, R Ishihara, A Morello, ...
npj Quantum Information 3 (1), 34, 2017
Monolithic 3D-ICs with single grain Si thin film transistors
R Ishihara, J Derakhshandeh, MRT Mofrad, T Chen, N Golshani, ...
Solid-State Electronics 71, 80-87, 2012
Monolithic 3D integration of SRAM and image sensor using two layers of single grain silicon
N Golshani, J Derakhshandeh, R Ishihara, CIM Beenakker, M Robertson, ...
2010 IEEE International 3D Systems Integration Conference (3DIC), 1-4, 2010
Influence of the growth temperature on the first and second-order Raman band ratios and widths of carbon nanotubes and fibers
S Vollebregt, R Ishihara, FD Tichelaar, Y Hou, CIM Beenakker
Carbon 50 (10), 3542-3554, 2012
Large polycrystalline silicon grains prepared by excimer laser crystallization of sputtered amorphous silicon film with process temperature at 100 C
M He, R Ishihara, EJJ Neihof, Y van Andel, H Schellevis, W Metselaar, ...
Japanese journal of applied physics 46 (3S), 1245, 2007
A Study of the CMP Effect on the Quality of Thin Silicon Films Crystallized by Using the??-Czochralski Process
J Derakhshandeh, MRT Mofrad, R Ishihara, J Van der Cingel, ...
Journal of the Korean Physical Society 54 (9), 432-436, 2009
Formation of location-controlled crystalline islands using substrate-embedded seeds in excimer-laser crystallization of silicon films
PC Van der Wilt, BD Van Dijk, GJ Bertens, R Ishihara, CIM Beenakker
Applied Physics Letters 79 (12), 1819-1821, 2001
Excimer-laser-produced single-crystal silicon thin-film transistors
RIR Ishihara, MMM Matsumura
Japanese journal of applied physics 36 (10R), 6167, 1997
Effects of light pulse duration on excimer-laser crystallization characteristics of silicon thin films
RIR Ishihara, WCYWC Yeh, THT Hattori, MMM Matsumura
Japanese journal of applied physics 34 (4R), 1759, 1995
Carbon nanotube vertical interconnects fabricated at temperatures as low as 350 C
S Vollebregt, FD Tichelaar, H Schellevis, CIM Beenakker, R Ishihara
Carbon 71, 249-256, 2014
Dependence of single-crystalline Si TFT characteristics on the channel position inside a location-controlled grain
V Rana, R Ishihara, Y Hiroshima, D Abe, S Inoue, T Shimoda, ...
IEEE Transactions on Electron Devices 52 (12), 2622-2628, 2005
Advanced excimer-laser crystallization process for single-crystalline thin film transistors
R Ishihara, PC Van der Wilt, BD van Dijk, A Burtsev, JW Metselaar, ...
Thin Solid Films 427 (1-2), 77-85, 2003
Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing
M Fujii, Y Ishikawa, R Ishihara, J van der Cingel, MRT Mofrad, M Horita, ...
Applied Physics Letters 102 (12), 122107, 2013
Single-grain Si TFTs with ECR-PECVD gate SiO2
R Ishihara, Y Hiroshima, D Abe, BD Van Dijk, PC Van Der Wilt, S Higashi, ...
Electron Devices, IEEE Transactions on 51 (3), 500-502, 2004
Advanced excimer laser crystallization techniques of Si thin film for location control of large grain on glass
R Ishihara, PC van der Wilt, BD van Dijk, A Burtsev, FC Voogt, GJ Bertens, ...
Flat Panel Display Technology and Display Metrology II 4295, 14-23, 2001
Location-control of large Si grains by dual-beam excimer-laser and thick oxide portion
R Ishihara, A Burtsev, PFA Alkemade
Japanese Journal of Applied Physics 39 (7R), 3872, 2000
Melting and crystallization behavior of low-pressure chemical-vapor-deposition amorphous Si films during excimer-laser annealing
FC Voogt, R Ishihara, FD Tichelaar
Journal of applied physics 95 (5), 2873-2879, 2004
Electrical property of coincidence site lattice grain boundary in location-controlled Si island by excimer-laser crystallization
R Ishihara, M He, V Rana, Y Hiroshima, S Inoue, T Shimoda, ...
Thin solid films 487 (1-2), 97-101, 2005
Solution-processed polycrystalline silicon on paper
M Trifunovic, T Shimoda, R Ishihara
Applied Physics Letters 106 (16), 163502, 2015
Ultra-large grain growth of Si films on glassy substrate
R Ishihara, M Matsumura
Electronics Letters 31 (22), 1956-1957, 1995
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Articles 1–20