| Interfacing spin qubits in quantum dots and donors—hot, dense, and coherent LMK Vandersypen, H Bluhm, JS Clarke, AS Dzurak, R Ishihara, A Morello, ... npj Quantum Information 3 (1), 1-10, 2017 | 208 | 2017 |
| Monolithic 3D-ICs with single grain Si thin film transistors R Ishihara, J Derakhshandeh, MRT Mofrad, T Chen, N Golshani, ... Solid-State Electronics 71, 80-87, 2012 | 147 | 2012 |
| Monolithic 3D integration of SRAM and image sensor using two layers of single grain silicon N Golshani, J Derakhshandeh, R Ishihara, CIM Beenakker, M Robertson, ... 2010 IEEE International 3D Systems Integration Conference (3DIC), 1-4, 2010 | 138 | 2010 |
| Influence of the growth temperature on the first and second-order Raman band ratios and widths of carbon nanotubes and fibers S Vollebregt, R Ishihara, FD Tichelaar, Y Hou, CIM Beenakker Carbon 50 (10), 3542-3554, 2012 | 130 | 2012 |
| Formation of location-controlled crystalline islands using substrate-embedded seeds in excimer-laser crystallization of silicon films PC Van Der Wilt, BD Van Dijk, GJ Bertens, R Ishihara, CIM Beenakker Applied Physics Letters 79 (12), 1819-1821, 2001 | 130 | 2001 |
| Large Polycrystalline Silicon Grains Prepared by Excimer Laser Crystallization of Sputtered Amorphous Silicon Film with Process Temperature at 100 C M He, R Ishihara, EJJ Neihof, Y van Andel, H Schellevis, W Metselaar, ... Japanese journal of applied physics 46 (3S), 1245, 2007 | 119 | 2007 |
| A Study of the CMP Effect on the Quality of Thin Silicon Films Crystallized by Using the??-Czochralski Process J Derakhshandeh, MRT Mofrad, R Ishihara, J Van der Cingel, ... Journal of the Korean Physical Society 54 (9), 432-436, 2009 | 108 | 2009 |
| Effects of light pulse duration on excimer-laser crystallization characteristics of silicon thin films R Ishihara, WC Yeh, T Hattori, M Matsumura Japanese journal of applied physics 34 (4R), 1759, 1995 | 76 | 1995 |
| Excimer-laser-produced single-crystal silicon thin-film transistors R Ishihara, M Matsumura Japanese journal of applied physics 36 (10R), 6167, 1997 | 68 | 1997 |
| Dependence of single-crystalline Si TFT characteristics on the channel position inside a location-controlled grain V Rana, R Ishihara, Y Hiroshima, D Abe, S Inoue, T Shimoda, ... IEEE Transactions on Electron Devices 52 (12), 2622-2628, 2005 | 54 | 2005 |
| Advanced excimer-laser crystallization process for single-crystalline thin film transistors R Ishihara, PC Van der Wilt, BD van Dijk, A Burtsev, JW Metselaar, ... Thin Solid Films 427 (1-2), 77-85, 2003 | 53 | 2003 |
| Carbon nanotube vertical interconnects fabricated at temperatures as low as 350 C S Vollebregt, FD Tichelaar, H Schellevis, CIM Beenakker, R Ishihara Carbon 71, 249-256, 2014 | 50 | 2014 |
| Location-control of large Si grains by dual-beam excimer-laser and thick oxide portion R Ishihara, A Burtsev, PFA Alkemade Japanese Journal of Applied Physics 39 (7R), 3872, 2000 | 45 | 2000 |
| Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing M Fujii, Y Ishikawa, R Ishihara, J van der Cingel, MRT Mofrad, M Horita, ... Applied Physics Letters 102 (12), 122107, 2013 | 44 | 2013 |
| Advanced excimer laser crystallization techniques of Si thin film for location control of large grain on glass R Ishihara, PC van der Wilt, BD van Dijk, A Burtsev, FC Voogt, GJ Bertens, ... Flat Panel Display Technology and Display Metrology II 4295, 14-23, 2001 | 44 | 2001 |
| Single-grain Si TFTs with ECR-PECVD gate SiO2 R Ishihara, Y Hiroshima, D Abe, BD Van Dijk, PC Van Der Wilt, S Higashi, ... Electron Devices, IEEE Transactions on 51 (3), 500-502, 2004 | 43* | 2004 |
| Electrical property of coincidence site lattice grain boundary in location-controlled Si island by excimer-laser crystallization R Ishihara, M He, V Rana, Y Hiroshima, S Inoue, T Shimoda, ... Thin solid films 487 (1-2), 97-101, 2005 | 39 | 2005 |
| Single-grain Si thin-film transistors on flexible polyimide substrate fabricated from doctor-blade coated liquid-Si J Zhang, M Trifunovic, M Van Der Zwan, H Takagishi, R Kawajiri, ... Applied Physics Letters 102 (24), 243502, 2013 | 38 | 2013 |
| Melting and crystallization behavior of low-pressure chemical-vapor-deposition amorphous Si films during excimer-laser annealing FC Voogt, R Ishihara, FD Tichelaar Journal of applied physics 95 (5), 2873-2879, 2004 | 38 | 2004 |
| Ultra-large grain growth of Si films on glassy substrate R Ishihara, M Matsumura Electronics Letters 31 (22), 1956-1957, 1995 | 37 | 1995 |
Sten VollebregtAssistant professor, Delft University of Technology, EKL (DIMES), The NetherlandsVerified email at tudelft.nl
