Ryoichi Ishihara
Ryoichi Ishihara
Delft University of Technology, QuTech
Verified email at - Homepage
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Interfacing spin qubits in quantum dots and donors—hot, dense, and coherent
LMK Vandersypen, H Bluhm, JS Clarke, AS Dzurak, R Ishihara, A Morello, ...
npj Quantum Information 3 (1), 1-10, 2017
Monolithic 3D-ICs with single grain Si thin film transistors
R Ishihara, J Derakhshandeh, MRT Mofrad, T Chen, N Golshani, ...
Solid-State Electronics 71, 80-87, 2012
Monolithic 3D integration of SRAM and image sensor using two layers of single grain silicon
N Golshani, J Derakhshandeh, R Ishihara, CIM Beenakker, M Robertson, ...
2010 IEEE International 3D Systems Integration Conference (3DIC), 1-4, 2010
Influence of the growth temperature on the first and second-order Raman band ratios and widths of carbon nanotubes and fibers
S Vollebregt, R Ishihara, FD Tichelaar, Y Hou, CIM Beenakker
Carbon 50 (10), 3542-3554, 2012
Large Polycrystalline Silicon Grains Prepared by Excimer Laser Crystallization of Sputtered Amorphous Silicon Film with Process Temperature at 100 C
M He, R Ishihara, EJJ Neihof, Y van Andel, H Schellevis, W Metselaar, ...
Japanese journal of applied physics 46 (3S), 1245, 2007
A Study of the CMP Effect on the Quality of Thin Silicon Films Crystallized by Using the??-Czochralski Process
J Derakhshandeh, MRT Mofrad, R Ishihara, J Van der Cingel, ...
Journal of the Korean Physical Society 54 (9), 432-436, 2009
Formation of location-controlled crystalline islands using substrate-embedded seeds in excimer-laser crystallization of silicon films
PC Van der Wilt, BD Van Dijk, GJ Bertens, R Ishihara, CIM Beenakker
Applied Physics Letters 79 (12), 1819-1821, 2001
Effects of light pulse duration on excimer-laser crystallization characteristics of silicon thin films
RIR Ishihara, WCYWC Yeh, THT Hattori, MMM Matsumura
Japanese journal of applied physics 34 (4R), 1759, 1995
Excimer-laser-produced single-crystal silicon thin-film transistors
RIR Ishihara, MMM Matsumura
Japanese journal of applied physics 36 (10R), 6167, 1997
Carbon nanotube vertical interconnects fabricated at temperatures as low as 350 C
S Vollebregt, FD Tichelaar, H Schellevis, CIM Beenakker, R Ishihara
Carbon 71, 249-256, 2014
Dependence of single-crystalline Si TFT characteristics on the channel position inside a location-controlled grain
V Rana, R Ishihara, Y Hiroshima, D Abe, S Inoue, T Shimoda, ...
IEEE Transactions on Electron Devices 52 (12), 2622-2628, 2005
Advanced excimer-laser crystallization process for single-crystalline thin film transistors
R Ishihara, PC Van der Wilt, BD van Dijk, A Burtsev, JW Metselaar, ...
Thin Solid Films 427 (1-2), 77-85, 2003
Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing
M Fujii, Y Ishikawa, R Ishihara, J van der Cingel, MRT Mofrad, M Horita, ...
Applied Physics Letters 102 (12), 122107, 2013
Advanced excimer laser crystallization techniques of Si thin film for location control of large grain on glass
R Ishihara, PC van der Wilt, BD van Dijk, A Burtsev, FC Voogt, GJ Bertens, ...
Flat Panel Display Technology and Display Metrology II 4295, 14-23, 2001
Location-control of large Si grains by dual-beam excimer-laser and thick oxide portion
R Ishihara, A Burtsev, PFA Alkemade
Japanese Journal of Applied Physics 39 (7R), 3872, 2000
Single-grain Si TFTs with ECR-PECVD gate SiO2
R Ishihara, Y Hiroshima, D Abe, BD Van Dijk, PC Van Der Wilt, S Higashi, ...
Electron Devices, IEEE Transactions on 51 (3), 500-502, 2004
Melting and crystallization behavior of low-pressure chemical-vapor-deposition amorphous Si films during excimer-laser annealing
FC Voogt, R Ishihara, FD Tichelaar
Journal of applied physics 95 (5), 2873-2879, 2004
Electrical property of coincidence site lattice grain boundary in location-controlled Si island by excimer-laser crystallization
R Ishihara, M He, V Rana, Y Hiroshima, S Inoue, T Shimoda, ...
Thin solid films 487 (1-2), 97-101, 2005
Single-grain Si thin-film transistors on flexible polyimide substrate fabricated from doctor-blade coated liquid-Si
J Zhang, M Trifunovic, M Van Der Zwan, H Takagishi, R Kawajiri, ...
Applied Physics Letters 102 (24), 243502, 2013
Ultra-large grain growth of Si films on glassy substrate
R Ishihara, M Matsumura
Electronics Letters 31 (22), 1956-1957, 1995
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