Morales, F.M.
Morales, F.M.
Instituto IMEYMAT, Universidad de Cádiz
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Effect of dislocations on electrical and electron transport properties of InN thin films. II. Density and mobility of the carriers
V Lebedev, V Cimalla, T Baumann, O Ambacher, FM Morales, JG Lozano
Journal of applied physics 100 (9), 2006
Determination of the composition of InxGa1− xN from strain measurements
FM Morales, D González, JG Lozano, R García, S Hauguth-Frank, ...
Acta Materialia 57 (19), 5681-5692, 2009
Microstructural and thermodynamic study of γ-Ga2O3
M Zinkevich, F Miguel Morales, H Nitsche, M Ahrens, M Rühle, F Aldinger
International Journal of Materials Research 95 (9), 756-762, 2022
Model for the thickness dependence of electron concentration in InN films
V Cimalla, V Lebedev, FM Morales, R Goldhahn, O Ambacher
Applied physics letters 89 (17), 2006
Effect of dislocations on electrical and electron transport properties of InN thin films. I. Strain relief and formation of a dislocation network
V Lebedev, V Cimalla, J Pezoldt, M Himmerlich, S Krischok, JA Schaefer, ...
Journal of applied physics 100 (9), 2006
The role of Si as surfactant and donor in molecular-beam epitaxy of AlN
V Lebedev, FM Morales, H Romanus, S Krischok, G Ecke, V Cimalla, ...
Journal of applied physics 98 (9), 2005
Near-infrared emitting In-rich InGaN layers grown directly on Si: Towards the whole composition range
P Aseev, PED Rodriguez, VJ Gómez, JM Mánuel, FM Morales, ...
Applied Physics Letters 106 (7), 2015
QNMs of branes, BHs and fuzzballs from quantum SW geometries
M Bianchi, D Consoli, A Grillo, F Morales
Physics Letters B 824, 136837, 2022
Characterization of TiO2 deposited on textured silicon wafers by atmospheric pressure chemical vapour deposition
B Vallejo, M Gonzalez-Mañas, J Martínez-López, F Morales, ...
Solar Energy Materials and Solar Cells 86 (3), 299-308, 2005
Structural and compositional homogeneity of InAlN epitaxial layers nearly lattice-matched to GaN
JM Mánuel, FM Morales, JG Lozano, D González, R García, T Lim, ...
Acta Materialia 58 (12), 4120-4125, 2010
Coalescence aspects of III-nitride epitaxy
V Lebedev, K Tonisch, F Niebelschütz, V Cimalla, D Cengher, I Cimalla, ...
Journal of Applied Physics 101 (5), 2007
Ch. Y. Wang, V. Cimalla, and O. Ambacher
JG Lozano, FM Morales, R García, D González, V Lebedev
Appl. Phys. Lett 90, 091901, 2007
Phase equilibria in the ZrO2–GdO1. 5 system at 1400–1700° C
M Zinkevich, C Wang, FM Morales, M Rühle, F Aldinger
Journal of alloys and compounds 398 (1-2), 261-268, 2005
Raman studies of Ge-promoted stress modulation in 3C–SiC grown on Si (111)
C Zgheib, LE McNeil, M Kazan, P Masri, FM Morales, O Ambacher, ...
Applied Physics Letters 87 (4), 2005
Evaluation of interpolations of InN, AlN and GaN lattice and elastic constants for their ternary and quaternary alloys
FM Morales, JM Mánuel, R García, B Reuters, H Kalisch, A Vescan
Journal of Physics D: Applied Physics 46 (24), 245502, 2013
Growth mechanism and electronic properties of epitaxial In2O3 films on sapphire
CY Wang, L Kirste, FM Morales, JM Mánuel, CC Röhlig, K Köhler, ...
Journal of Applied Physics 110 (9), 2011
Formation of discontinuous Al2O3 layers during high-temperature oxidation of RuAl alloys
PJ Bellina, A Catanoiu, FM Morales, M Rühle
Journal of Materials Research 21 (1), 276-286, 2006
Direct measurement of polarization-induced fields in GaN/AlN by nano-beam electron diffraction
D Carvalho, K Müller-Caspary, M Schowalter, T Grieb, T Mehrtens, ...
Scientific Reports 6 (1), 28459, 2016
Ge-modified Si (100) substrates for the growth of 3C-SiC (100)
C Zgheib, LE McNeil, P Masri, C Förster, FM Morales, T Stauden, ...
Applied physics letters 88 (21), 2006
Threading dislocation propagation in AlGaN/GaN based HEMT structures grown on Si (111) by plasma assisted molecular beam epitaxy
JM Manuel, FM Morales, R García, R Aidam, L Kirste, O Ambacher
Journal of crystal growth 357, 35-41, 2012
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