| Residual stress in Si nanocrystals embedded in a SiO2 matrix T Arguirov, T Mchedlidze, M Kittler, R Rölver, B Berghoff, M Först, ... Applied Physics Letters 89 (5), 2006 | 88 | 2006 |
| The Direct Observation of Grown‐in Laser Scattering Tomography Defects in Czochralski Silicon M Nishimura, S Yoshino, H Motoura, S Shimura, T Mchedlidze, T Hikone Journal of the Electrochemical Society 143 (10), L243, 1996 | 84 | 1996 |
| Regular dislocation networks in silicon as a tool for nanostructure devices used in optics, biology, and electronics M Kittler, X Yu, T Mchedlidze, T Arguirov, OF Vyvenko, W Seifert, ... Small 3 (6), 964-973, 2007 | 80 | 2007 |
| Influence of dislocation loops on the near-infrared light emission from silicon diodes T Hoang, J Holleman, P LeMinh, J Schmitz, T Mchedlidze, T Arguirov, ... IEEE transactions on electron devices 54 (8), 1860-1866, 2007 | 41 | 2007 |
| Temperature dependence of conduction by reconstructured dislocations in silicon and nonlinear effects VV Kveder, AE Koshelev, T Mchedlidze, AIS Yu. A. Osip’yan Zh. Éksp. Teor. Fiz 83 (2), 699, 1989 | 36* | 1989 |
| Electrical activity of defects induced by oxygen precipitation in Czochralski-grown silicon wafers T Mchedlidze, K Matsumoto, E Asano Japanese journal of applied physics 38 (6R), 3426, 1999 | 35 | 1999 |
| Direct detection of carrier traps in Si solar cells after light‐induced degradation T Mchedlidze, J Weber physica status solidi (RRL)–Rapid Research Letters 9 (2), 108-110, 2015 | 33 | 2015 |
| Effect of laser annealing on crystallinity of the Si layers in Si/SiO2 multiple quantum wells T Arguirov, T Mchedlidze, VD Akhmetov, S Kouteva-Arguirova, M Kittler, ... Applied Surface Science 254 (4), 1083-1086, 2007 | 33 | 2007 |
| Capability of photoluminescence for characterization of multi-crystalline silicon T Mchedlidze, W Seifert, M Kittler, AT Blumenau, B Birkmann, T Mono, ... Journal of Applied Physics 111 (7), 2012 | 29 | 2012 |
| Rapid dislocation‐related D1‐photoluminescence imaging of multicrystalline Si wafers at room temperature RP Schmid, D Mankovics, T Arguirov, M Ratzke, T Mchedlidze, M Kittler physica status solidi (a) 208 (4), 888-892, 2011 | 27 | 2011 |
| Light-induced solid-to-solid phase transformation in Si nanolayers of Si− SiO 2 multiple quantum wells T Mchedlidze, T Arguirov, S Kouteva-Arguirova, M Kittler, R Rölver, ... Physical Review B 77 (16), 161304, 2008 | 26 | 2008 |
| Electric‐Dipole Spin Resonance of Dislocations in Plastically Deformed p‐Type Silicon M Wattenbach, C Kisielowski‐Kemmerich, H Alexander, VV Kveder, ... physica status solidi (b) 158 (1), K49-K53, 1990 | 25 | 1990 |
| EPR Study of Hydrogen‐Related Radiation‐Induced Shallow Donors in Silicon VP Markevich, VP Markevich, T McHedlidze, M Suezawa, LI Murin physica status solidi (b) 210 (2), 545-549, 1998 | 24 | 1998 |
| Influence of electric field on spectral positions of dislocation-related luminescence peaks in silicon: Stark effect T Mchedlidze, T Arguirov, M Kittler, T Hoang, J Holleman, J Schmitz Applied physics letters 91 (20), 2007 | 20 | 2007 |
| Defect states in Si containing dislocation nets SA Shevchenko, YA Ossipyan, TR Mchedlidze, EA Steinman, RA Batto physica status solidi (a) 146 (2), 745-755, 1994 | 20 | 1994 |
| Subsurface damage in single diamond tool machined Si wafers T Mchedlidze, I Yonenaga, K Sumino Materials Science Forum 196, 1841-1846, 1995 | 19 | 1995 |
| Temperature dependence of conduction by reconstructed dislocations in silicon and nonlinear effects VV Kveder, AE Koshelev, TR Mchelidze, YA Osipyan, AI Shalynin Soviet Physics-JETP 68 (1), 104-108, 1989 | 19 | 1989 |
| High-resolution photoinduced transient spectroscopy of electrically active iron-related defects in electron irradiated high-resistivity silicon P Kaminski, R Kozlowski, A Jelenski, T Mchedlidze, M Suezawa Japanese journal of applied physics 42 (9R), 5415, 2003 | 18 | 2003 |
| Characterization of Deep Levels Introduced by RTA and by Subsequent Anneals in n-Type Silicon D Kot, T Mchedlidze, G Kissinger, W Von Ammon Ecs Journal of Solid State Science and Technology 2 (1), P9, 2012 | 17 | 2012 |
| Determination of the Origin of Dislocation Related Luminescence from Silicon Using Regular Dislocation Networks T Mchedlidze, O Kononchuk, T Arguirov, M Trushin, M Reiche, M Kittler Solid State Phenomena 156, 567-572, 2010 | 17 | 2010 |
Vitaly KvederИФТТ РАНVerified email at issp.ac.ru
