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Oliver Ambacher
Oliver Ambacher
Gips-Schüle-Professur für Leistungselektronik, Universität Freiburg
Verified email at inatech.uni-freiburg.de - Homepage
Title
Cited by
Cited by
Year
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures
O Ambacher, J Smart, JR Shealy, NG Weimann, K Chu, M Murphy, ...
Journal of applied physics 85 (6), 3222-3233, 1999
36691999
Growth and applications of group III-nitrides
O Ambacher
Journal of physics D: Applied physics 31 (20), 2653, 1998
21611998
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
O Ambacher, B Foutz, J Smart, JR Shealy, NG Weimann, K Chu, ...
Journal of applied physics 87 (1), 334-344, 2000
20952000
Wireless sub-THz communication system with high data rate
S Koenig, D Lopez-Diaz, J Antes, F Boes, R Henneberger, A Leuther, ...
Nature photonics 7 (12), 977-981, 2013
14972013
Pyroelectric properties of Al (In) GaN/GaN hetero-and quantum well structures
O Ambacher, J Majewski, C Miskys, A Link, M Hermann, M Eickhoff, ...
Journal of physics: condensed matter 14 (13), 3399, 2002
14082002
Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures
V Fiorentini, F Bernardini, O Ambacher
Applied physics letters 80 (7), 1204-1206, 2002
10272002
Optical constants of epitaxial AlGaN films and their temperature dependence
D Brunner, H Angerer, E Bustarret, F Freudenberg, R Höpler, R Dimitrov, ...
Journal of applied physics 82 (10), 5090-5096, 1997
7981997
Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry
T Metzger, R Höpler, E Born, O Ambacher, M Stutzmann, R Stömmer, ...
Philosophical magazine A 77 (4), 1013-1025, 1998
7311998
Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral
PDC King, TD Veal, F Fuchs, CY Wang, DJ Payne, A Bourlange, H Zhang, ...
Physical Review B 79 (20), 205211, 2009
5032009
Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications
V Cimalla, J Pezoldt, O Ambacher
Journal of Physics D: Applied Physics 40 (20), S19, 2007
4772007
Undoped AlGaN/GaN HEMTs for microwave power amplification
LF Eastman, V Tilak, J Smart, BM Green, EM Chumbes, R Dimitrov, H Kim, ...
IEEE Transactions on Electron Devices 48 (3), 479-485, 2001
4672001
Determination of the Al mole fraction and the band gap bowing of epitaxial films
H Angerer, D Brunner, F Freudenberg, O Ambacher, M Stutzmann, ...
Applied Physics Letters 71 (11), 1504-1506, 1997
4311997
Large free-standing GaN substrates by hydride vapor phase epitaxy and laser-induced liftoff
MKKMK Kelly, RPVRP Vaudo, VMPVM Phanse, LGL Görgens, ...
Japanese journal of applied physics 38 (3A), L217, 1999
4201999
Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition
O Ambacher, MS Brandt, R Dimitrov, T Metzger, M Stutzmann, RA Fischer, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996
4041996
Sound velocity of thin films obtained by surface acoustic-wave measurements
C Deger, E Born, H Angerer, O Ambacher, M Stutzmann, J Hornsteiner, ...
Applied Physics Letters 72 (19), 2400-2402, 1998
3691998
Effects of solvent and annealing on the improved performance of solar cells based on poly (3-hexylthiophene): fullerene
M Al-Ibrahim, O Ambacher, S Sensfuss, G Gobsch
Applied Physics Letters 86 (20), 2005
3642005
Optical process for liftoff of group III-nitride films
MK Kelly, O Ambacher, R Dimitrov, R Handschuh, M Stutzmann
Physica Status Solidi A (Applied Research) 159, 1997
2971997
Relation between absorption and crystallinity of poly (3-hexylthiophene)/fullerene films for plastic solar cells
U Zhokhavets, T Erb, G Gobsch, M Al-Ibrahim, O Ambacher
Chemical Physics Letters 418 (4-6), 347-350, 2006
2942006
Playing with polarity
M Stutzmann, O Ambacher, M Eickhoff, U Karrer, A Lima Pimenta, ...
physica status solidi (b) 228 (2), 505-512, 2001
2862001
Influence of substrate‐induced biaxial compressive stress on the optical properties of thin GaN films
W Rieger, T Metzger, H Angerer, R Dimitrov, O Ambacher, M Stutzmann
Applied physics letters 68 (7), 970-972, 1996
2811996
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