| High density individually addressable nanowire arrays record intracellular activity from primary rodent and human stem cell derived neurons R Liu, R Chen, AT Elthakeb, SH Lee, S Hinckley, ML Khraiche, J Scott, ... Nano letters 17 (5), 2757-2764, 2017 | 171 | 2017 |
| Development and translation of PEDOT: PSS microelectrodes for intraoperative monitoring M Ganji, E Kaestner, J Hermiz, N Rogers, A Tanaka, D Cleary, SH Lee, ... Advanced Functional Materials 28 (12), 1700232, 2018 | 120 | 2018 |
| Scaling effects on the electrochemical stimulation performance of Au, Pt, and PEDOT: PSS electrocorticography arrays M Ganji, A Tanaka, V Gilja, E Halgren, SA Dayeh Advanced Functional Materials 27 (42), 1703019, 2017 | 92 | 2017 |
| Si complies with GaN to overcome thermal mismatches for the heteroepitaxy of thick GaN on Si A Tanaka, W Choi, R Chen, SA Dayeh Advanced Materials 29 (38), 1702557, 2017 | 63 | 2017 |
| Selective formation of porous Pt nanorods for highly electrochemically efficient neural electrode interfaces M Ganji, AC Paulk, JC Yang, NW Vahidi, SH Lee, R Liu, L Hossain, ... Nano letters 19 (9), 6244-6254, 2019 | 61 | 2019 |
| Autoclave sterilization of PEDOT: PSS electrophysiology devices I Uguz, M Ganji, A Hama, A Tanaka, SM Inal, AA Youssef, RM Owens, ... Advanced healthcare materials 5, 3094-3098, 2016 | 59 | 2016 |
| Scaling effects on the electrochemical performance of poly (3, 4‐ethylenedioxythiophene (PEDOT), Au, and Pt for electrocorticography recording M Ganji, AT Elthakeb, A Tanaka, V Gilja, E Halgren, SA Dayeh Advanced Functional Materials 27 (42), 1703018, 2017 | 57 | 2017 |
| Strong geometrical effects in submillimeter selective area growth and light extraction of GaN light emitting diodes on sapphire A Tanaka, R Chen, KL Jungjohann, SA Dayeh Scientific Reports 5 (1), 17314, 2015 | 42 | 2015 |
| Monolithic and scalable Au nanorod substrates improve PEDOT–metal adhesion and stability in neural electrodes M Ganji, L Hossain, A Tanaka, M Thunemann, E Halgren, V Gilja, A Devor, ... Advanced healthcare materials 7 (22), 1800923, 2018 | 40 | 2018 |
| Structural and electrical characterization of thick GaN layers on Si, GaN, and engineered substrates A Tanaka, W Choi, R Chen, R Liu, WM Mook, KL Jungjohann, PKL Yu, ... Journal of Applied Physics 125 (8), 2019 | 30 | 2019 |
| Intrinsically linear transistor for millimeter-wave low noise amplifiers W Choi, R Chen, C Levy, A Tanaka, R Liu, V Balasubramanian, ... Nano Letters 20 (4), 2812-2820, 2020 | 24 | 2020 |
| Design and analysis of blue InGaN/GaN plasmonic LED for high-speed, high-efficiency optical communications L Ferrari, JST Smalley, H Qian, A Tanaka, D Lu, S Dayeh, Y Fainman, ... ACS Photonics 5 (9), 3557-3564, 2018 | 24 | 2018 |
| Scalable thousand channel penetrating microneedle arrays on flex for multimodal and large area coverage brainmachine interfaces SH Lee, M Thunemann, K Lee, DR Cleary, KJ Tonsfeldt, H Oh, F Azzazy, ... Advanced functional materials 32 (25), 2112045, 2022 | 23 | 2022 |
| Addressable vertical nanowire probe arrays and fabrication methods A Shadi, R Chen, SH Lee, R Liu, YG Ro, A Tanaka, Y Hwang US Patent 11,363,979, 2022 | 2 | 2022 |
| Strain Engineered Crack-Free GaN on Si for Integrated Vertical High Power GaN Devices with Si CMOS S Dayeh, A Tanaka, W Choi, R Chen ECS Transactions 75 (8), 711, 2016 | 2 | 2016 |
| Scalable Thousand Channel Penetrating Microneedle Arrays on Flex for Multimodal and Large Area Coverage BrainMachine Interfaces (Adv. Funct. Mater. 25/2022) SH Lee, M Thunemann, K Lee, DR Cleary, KJ Tonsfeldt, H Oh, F Azzazy, ... Advanced Functional Materials 32 (25), 2270143, 2022 | 1 | 2022 |
| Heteroepitaxial Thick GaN Layers and Vertical High-Power Devices by Selective Area MOCVD Growth A Tanaka University of California, San Diego, 2019 | 1 | 2019 |
| Gate structures to enable lower subthreshold slope in gallium nitride-based transistors S Bajaj, MS Beumer, R Ehlert, GP McNerney, N Minutillo, X Qin, JC Rode, ... US Patent App. 17/557,827, 2023 | | 2023 |
| Pre-flow of p-type dopant precursor to enable thinner p-gan layers in gallium nitride-based transistors A Tanaka, S Bajaj, MS Beumer, R Ehlert, GP McNerney, N Minutillo, ... US Patent App. 17/519,429, 2023 | | 2023 |
| Intrinsically tunable and ultra-linear multi-fin MIS-HEMT devices A Shadi, C Woojin, R Chen, A Tanaka, R Liu US Patent 11,233,142, 2022 | | 2022 |
