| Effect of contact material on amorphous InGaZnO thin-film transistor characteristics Y Ueoka, Y Ishikawa, JP Bermundo, H Yamazaki, S Urakawa, Y Osada, ... Japanese Journal of Applied Physics 53 (3S1), 03CC04, 2014 | 56 | 2014 |
| Highly reliable polysilsesquioxane passivation layer for a-InGaZnO thin-film transistors JP Bermundo, Y Ishikawa, H Yamazaki, T Nonaka, Y Uraoka ECS Journal of Solid State Science and Technology 3 (2), Q16, 2013 | 42 | 2013 |
| Density of states in amorphous In-Ga-Zn-O thin-film transistor under negative bias illumination stress Y Ueoka, Y Ishikawa, JP Bermundo, H Yamazaki, S Urakawa, M Fujii, ... ECS Journal of Solid State Science and Technology 3 (9), Q3001, 2014 | 35 | 2014 |
| Highly reliable photosensitive organic-inorganic hybrid passivation layers for a-InGaZnO thin-film transistors JP Bermundo, Y Ishikawa, H Yamazaki, T Nonaka, MN Fujii, Y Uraoka Applied Physics Letters 107 (3), 2015 | 28 | 2015 |
| Impact of Mg level on lattice relaxation in a p-AlGaN hole source layer and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters MA Khan, JP Bermundo, Y Ishikawa, H Ikenoue, S Fujikawa, E Matsuura, ... Nanotechnology 32 (5), 055702, 2020 | 26 | 2020 |
| Hot carrier effects in InGaZnO thin-film transistor T Takahashi, R Miyanaga, MN Fujii, J Tanaka, K Takechi, H Tanabe, ... Applied Physics Express 12 (9), 094007, 2019 | 25 | 2019 |
| Effect of excimer laser annealing on a-InGaZnO thin-film transistors passivated by solution-processed hybrid passivation layers JP Bermundo, Y Ishikawa, MN Fujii, T Nonaka, R Ishihara, H Ikenoue, ... Journal of Physics D: Applied Physics 49 (3), 035102, 2015 | 25 | 2015 |
| Significant mobility improvement of amorphous In-Ga-Zn-O thin-film transistors annealed in a low temperature wet ambient environment MPA Jallorina, JPS Bermundo, MN Fujii, Y Ishikawa, Y Uraoka Applied Physics Letters 112 (19), 2018 | 24 | 2018 |
| High-performance fully solution-processed oxide thin-film transistors via photo-assisted role tuning of InZnO DC Corsino, JPS Bermundo, C Kulchaisit, MN Fujii, Y Ishikawa, ... ACS Applied Electronic Materials 2 (8), 2398-2407, 2020 | 21 | 2020 |
| Reliability improvement of amorphous InGaZnO thin-film transistors by less hydroxyl-groups siloxane passivation C Kulchaisit, Y Ishikawa, MN Fujii, H Yamazaki, JPS Bermundo, ... Journal of Display Technology 12 (3), 263-267, 2016 | 19 | 2016 |
| Low temperature cured poly-siloxane passivation for highly reliable a-InGaZnO thin-film transistors N Yoshida, JP Bermundo, Y Ishikawa, T Nonaka, K Taniguchi, Y Uraoka Applied Physics Letters 112 (21), 2018 | 18 | 2018 |
| H and Au diffusion in high mobility a-InGaZnO thin-film transistors via low temperature KrF excimer laser annealing JPS Bermundo, Y Ishikawa, MN Fujii, H Ikenoue, Y Uraoka Applied Physics Letters 110 (13), 2017 | 17 | 2017 |
| Instantaneous semiconductor-to-conductor transformation of a transparent oxide semiconductor a-InGaZnO at 45 C JPS Bermundo, Y Ishikawa, MN Fujii, H Ikenoue, Y Uraoka ACS applied materials & interfaces 10 (29), 24590-24597, 2018 | 15 | 2018 |
| High performance top gate a-IGZO TFT utilizing siloxane hybrid material as a gate insulator C Kulchaisit, JPS Bermundo, MN Fujii, Y Ishikawa, Y Uraoka AIP Advances 8 (9), 2018 | 13 | 2018 |
| Fluorine incorporation in solution-processed poly-siloxane passivation for highly reliable a-InGaZnO thin-film transistors N Yoshida, JP Bermundo, Y Ishikawa, T Nonaka, K Taniguchi, Y Uraoka Journal of Physics D: Applied Physics 51 (12), 125105, 2018 | 13 | 2018 |
| Improvement in bias stress stability of solution-processed amorphous InZnO thin-film transistors via low-temperature photosensitive passivation AS Safaruddin, JPS Bermundo, N Yoshida, T Nonaka, MN Fujii, ... IEEE Electron Device Letters 41 (9), 1372-1375, 2020 | 12 | 2020 |
| Dimethylaluminum hydride for atomic layer deposition of Al2O3 passivation for amorphous InGaZnO thin-film transistors DC Corsino, JPS Bermundo, MN Fujii, K Takahashi, Y Ishikawa, Y Uraoka Applied Physics Express 11 (6), 061103, 2018 | 12 | 2018 |
| Degradation phenomenon in metal-oxide-semiconductor thin-film transistors and techniques for its reliability evaluation and suppression Y Uraoka, JP Bermundo, MN Fujii, M Uenuma, Y Ishikawa Japanese Journal of Applied Physics 58 (9), 090502, 2019 | 11 | 2019 |
| High mobility silicon indium oxide thin-film transistor fabrication by sputtering process S Arulkumar, S Parthiban, JY Kwon, Y Uraoka, JPS Bermundo, ... Vacuum 199, 110963, 2022 | 10 | 2022 |
| Self-heating suppressed structure of a-IGZO thin-film transistor K Kise, MN Fujii, JP Bermundo, Y Ishikawa, Y Uraoka IEEE Electron Device Letters 39 (9), 1322-1325, 2018 | 10 | 2018 |
Yukiharu UraokaNara Institute of Science and TechnologyVerified email at ms.naist.jp
