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Stefan Kubicek
Stefan Kubicek
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10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation
B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ...
2011 International Electron Devices Meeting, 31.6. 1-31.6. 4, 2011
8972011
Planar Bulk MOSFETs Versus FinFETs: An Analog/RF Perspective
V Subramanian, B Parvais, J Borremans, A Mercha, D Linten, P Wambacq, ...
IEEE Transactions on Electron Devices 53 (12), 3071-3079, 2006
1892006
Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession
T Chiarella, L Witters, A Mercha, C Kerner, M Rakowski, C Ortolland, ...
Solid-State Electronics 54 (9), 855-860, 2010
1592010
Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates
H Mertens, R Ritzenthaler, A Chasin, T Schram, E Kunnen, A Hikavyy, ...
2016 IEEE International Electron Devices Meeting (IEDM), 19.7. 1-19.7. 4, 2016
1552016
Deposition of HfO2 on germanium and the impact of surface pretreatments
S Van Elshocht, B Brijs, M Caymax, T Conard, T Chiarella, S De Gendt, ...
Applied physics letters 85 (17), 3824-3826, 2004
1372004
Analysis of leakage currents and impact on off-state power consumption for CMOS technology in the 100-nm regime
WK Henson, N Yang, S Kubicek, EM Vogel, JJ Wortman, K De Meyer, ...
IEEE Transactions on Electron Devices 47 (7), 1393-1400, 2000
1342000
International Electron Devices Meeting
B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ...
Washington DC 31 (1), 2011
1162011
Impact of MOSFET oxide breakdown on digital circuit operation and reliability
B Kaczer, R Degraeve, G Groeseneken, M Rasras, S Kubicek, ...
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000
1122000
Work function of Ni silicide phases on HfSiON and SiO/sub 2: NiSi, Ni/sub 2/Si, Ni/sub 31/Si/sub 12/, and Ni/sub 3/Si fully silicided gates
JA Kittl, MA Pawlak, A Lauwers, C Demeurisse, K Opsomer, KG Anil, ...
IEEE electron device letters 27 (1), 34-36, 2005
832005
1.5× 10− 9 Ωcm2 Contact resistivity on highly doped Si: P using Ge pre-amorphization and Ti silicidation
H Yu, M Schaekers, E Rosseel, A Peter, JG Lee, WB Song, S Demuynck, ...
2015 IEEE International Electron Devices Meeting (IEDM), 21.7. 1-21.7. 4, 2015
702015
Characterization of epitaxial Si: C: P and Si: P layers for source/drain formation in advanced bulk FinFETs
E Rosseel, HB Profijt, AY Hikavyy, J Tolle, S Kubicek, G Mannaert, ...
ECS Transactions 64 (6), 977, 2014
602014
10× 10 nm 2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation. in 2011 Int
B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ...
Electron Devices Meet 31, 1-31.6, 2011
592011
Device and circuit-level analog performance trade-offs: a comparative study of planar bulk FETs versus FinFETs
V Subramaniana, B Parvais, J Borremans, A Mercha, D Linten, ...
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005
592005
Limitations of shift-and-ratio based L/sub eff/extraction techniques for MOS transistors with halo or pocket implants
H Van Meer, K Henson, JH Lyu, M Rosmeulen, S Kubicek, N Collaert, ...
IEEE Electron Device Letters 21 (3), 133-136, 2000
592000
Electrical characterisation of high-k materials prepared by atomic layer CVD
RJ Carter, E Cartier, M Caymax, S De Gendt, R Degraevel, ...
Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 …, 2001
552001
A new technique to fabricate ultra-shallow-junctions, combining in situ vapour HCl etching and in situ doped epitaxial SiGe re-growth
R Loo, M Caymax, P Meunier-Beillard, I Peytier, F Holsteyns, S Kubicek, ...
Applied surface science 224 (1-4), 63-67, 2004
522004
Selective epitaxial growth of high-P Si: P for source/drain formation in advanced Si nFETs
E Rosseel, SK Dhayalan, AY Hikavyy, R Loo, HB Profijt, D Kohen, ...
ECS Transactions 75 (8), 347, 2016
502016
Demonstration of fully Ni-silicided metal gates on HfO/sub 2/based high-k gate dielectrics as a candidate for low power applications
KG Anil, A Veloso, S Kubicek, T Schram, E Augendre, JF de Marneffe, ...
Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 190-191, 2004
492004
IEDM Tech. Dig.
B Govoreanu, GS Kar, Y Chen, V Paraschiv, S Kubicek, A Fantini
IEDM Tech. Dig, 729, 2011
462011
Practical accuracy analysis of some existing effective channel length and series resistance extraction methods for MOSFET's
S Biesemans, M Hendriks, S Kubicek, K De Meyer
IEEE Transactions on Electron Devices 45 (6), 1310-1316, 1998
431998
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Artikelen 1–20