| Characterization of a silicon IGBT and silicon carbide MOSFET cross-switch hybrid M Rahimo, F Canales, RA Minamisawa, C Papadopoulos, U Vemulapati, ... IEEE Transactions on Power Electronics 30 (9), 4638-4642, 2015 | 140 | 2015 |
| Current sharing behavior in Si IGBT and SiC MOSFET cross-switch hybrid RA Minamisawa, U Vemulapati, A Mihaila, C Papadopoulos, M Rahimo IEEE Electron Device Letters 37 (9), 1178-1180, 2016 | 58 | 2016 |
| Robust 3.3 kV silicon carbide MOSFETs with surge and short circuit capability L Knoll, A Mihaila, F Bauer, V Sundaramoorthy, E Bianda, R Minamisawa, ... 2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017 | 33 | 2017 |
| The influence of humidity on the high voltage blocking reliability of power IGBT modules and means of protection C Papadopoulos, C Corvasce, A Kopta, D Schneider, G Pâques, ... Microelectronics Reliability 88, 470-475, 2018 | 30 | 2018 |
| Simulation and experimental results of 3.3 kV cross switch “Si-IGBT and SiC-MOSFET” hybrid UR Vemulapati, A Mihaila, RA Minamisawa, F Canales, M Rahimo, ... 2016 28th International Symposium on Power Semiconductor Devices and ICs …, 2016 | 28 | 2016 |
| The next generation 6500 V BIGT HiPak modules L Storasta, A Kopta, M Rahimo, C Papadopoulos, S Geissmann, ... Proc. PCIM 13, 2013 | 22 | 2013 |
| BIGT control optimisation for overall loss reduction C Papadopoulos, L Storasta, M Le Gallo, M Rahimo, R Schnell, ... 2013 15th European Conference on Power Electronics and Applications (EPE), 1-10, 2013 | 19 | 2013 |
| Humidity robustness of IGBT guard ring termination C Papadopoulos, B Boksteen, G Paques, C Corvasce PCIM Europe 2019; International Exhibition and Conference for Power …, 2019 | 18 | 2019 |
| Packaging technology platform for next generation high power IGBT modules S Hartmann, V Sivasubramaniam, D Guillon, DE Hajas, R Schuetz, ... PCIM Europe 2014; International Exhibition and Conference for Power …, 2014 | 15 | 2014 |
| Planar 1.2 kV SiC MOSFETs with retrograde channel profile for enhanced ruggedness L Knoll, A Mihaila, S Wirths, Y Arango, A Prasmusinto, E Bianda, L Kranz, ... 2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019 | 14 | 2019 |
| The third generation 6.5 kV HiPak2 module rated 1000A and 150° C M Chen, C Papadopoulos, E Tsyplakov PCIM Asia 2018; International Exhibition and Conference for Power …, 2018 | 14 | 2018 |
| The Cross Switch" XS" Silicon and Silicon Carbide Hybrid Concept M Rahimo, F Canales, RA Minamisawa, U Vemulapati, M Aketa, ... Proceedings of PCIM Europe 2015; International Exhibition and Conference for …, 2015 | 13 | 2015 |
| An advanced bimode insulated gate transistor BIGT with low diode conduction losses under a positive gate bias M Rahimo, C Papadopoulos, C Corvasce, A Kopta 2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017 | 10 | 2017 |
| An optimized plug-in BIGT with no requirements for gate control adaptations M Rahimo, C Papadopoulos, C Corvasce, A Kopta PCIM Europe 2017; International Exhibition and Conference for Power …, 2017 | 10 | 2017 |
| Dynamic switching and short circuit capability of 6.5 kV silicon carbide MOSFETs L Knoll, A Mihaila, L Kranz, M Bellini, S Wirths, E Bianda, ... 2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018 | 9 | 2018 |
| A critical view of IGBT buffer designs for 200° C operation E Buitrago, A Mesemanolis, M Andenna, C Papadopoulos, C Corvasce, ... 2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019 | 6 | 2019 |
| An advanced soft punch through buffer design for thin wafer IGBTs targeting lower losses and higher operating temperatures up to 200° C E Buitrago, A Mesemanolis, C Papadopoulos, C Corvasce, J Vobecky, ... 2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018 | 6 | 2018 |
| Experimental investigation of SiC 6.5 kV JBS diodes safe operating area A Mihaila, E Bianda, L Knoll, U Vemulapati, L Kranz, G Alfieri, V Soler, ... 2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017 | 6 | 2017 |
| 6.5 kV field shielded anode (FSA) diode concept with 150C maximum operational temperature capability BK Boksteen, C Papadopoulos, D Prindle, A Kopta, C Corvasce 2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018 | 5 | 2018 |
| The Bimode Cross Switch (BXS) a full hybrid solution in switch-and diode-modes UR Vemulapati, M Rahimo, A Mihaila, RA Minamisawa, C Papadopoulos, ... 2016 18th European Conference on Power Electronics and Applications (EPE'16 …, 2016 | 5 | 2016 |
Munaf RahimoMTAL GmbHVerified email at mtal.ch
Munaf RahimoMTAL GmbHVerified email at mtal.ch