Sergey N. Filimonov
Sergey N. Filimonov
Assistant Professor, Department of Physics, Tomsk State University
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Molecular switches from benzene derivatives adsorbed on metal surfaces
W Liu, SN Filimonov, J Carrasco, A Tkatchenko
Nature Communications 4 (1), 1-6, 2013
Terrace-edge-kink model of atomic processes at the permeable steps
SN Filimonov, YY Hervieu
Surface science 553 (1-3), 133-144, 2004
Identification of Ge/Si intermixing processes at the Bi/Ge/Si (111) surface
N Paul, S Filimonov, V Cherepanov, M Çakmak, B Voigtländer
Physical review letters 98 (16), 166104, 2007
Scaling of submonolayer island sizes in surfactant-mediated epitaxy of semiconductors
V Cherepanov, S Filimonov, J Mysliveček, B Voigtländer
Physical Review B 70 (8), 085401, 2004
Dislocation networks in conventional and surfactant-mediated Ge/Si (1 1 1) epitaxy
SN Filimonov, V Cherepanov, N Paul, H Asaoka, J Brona, B Voigtländer
Surface science 599 (1-3), 76-84, 2005
Multistage nucleation of two-dimensional Si islands on Si (111)− 7× 7 during MBE growth: STM experiments and extended rate-equation model
S Filimonov, V Cherepanov, Y Hervieu, B Voigtländer
Physical Review B 76 (3), 035428, 2007
Switchable Schottky contacts: Simultaneously enhanced output current and reduced leakage current
G Su, S Yang, S Li, CJ Butch, SN Filimonov, JC Ren, W Liu
Journal of the American Chemical Society 141 (4), 1628-1635, 2019
Growth rate anomaly in ultralow-pressure chemical vapor deposition of 3C-SiC on Si (001) using monomethylsilane
E Saito, SN Filimonov, M Suemitsu
Japanese Journal of Applied Physics 50 (1R), 010203, 2011
In situ SR-XPS observation of Ni-assisted low-temperature formation of epitaxial graphene on 3C-SiC/Si
M Hasegawa, K Sugawara, R Suto, S Sambonsuge, Y Teraoka, ...
Nanoscale research letters 10 (1), 1-6, 2015
Model of step propagation and step bunching at the sidewalls of nanowires
SN Filimonov, YY Hervieu
Journal of Crystal Growth 427, 60-66, 2015
“Rotating” steps in Si (0 0 1) homoepitaxy
SN Filimonov, B Voigtländer
Surface science 549 (1), 31-36, 2004
Influence of strain on binding energies of Si atoms at Ge (111) surfaces
SN Filimonov, B Voigtländer
Surface science 512 (1-2), L335-L340, 2002
Statistics of second layer nucleation in heteroepitaxial growth
SN Filimonov, YY Hervieu
Surface science 507, 270-275, 2002
Rotated epitaxy of 3C-SiC (111) on Si (110) substrate using monomethylsilane-based gas-source molecular-beam epitaxy
S Sambonsuge, E Saito, MH Jung, H Fukidome, S Filimonov, M Suemitsu
Materials Science Forum 740, 339-343, 2013
Principles of design for substrate-supported molecular switches based on physisorbed and chemisorbed states
S Yang, S Li, SN Filimonov, M Fuentes-Cabrera, W Liu
ACS applied materials & interfaces 10 (31), 26772-26780, 2018
Kinetics of step propagation at the sidewalls of 3D islands and nanowires
SN Filimonov, YY Hervieu
e-Journal of Surface Science and Nanotechnology 12, 68-74, 2014
Selective Adsorption of on Nanostructures
S Korte, K Romanyuk, B Schnitzler, V Cherepanov, B Voigtländer, ...
Physical Review Letters 108 (11), 116101, 2012
Kinetics of two-dimensional island nucleation on reconstructed surfaces
SN Filimonov, YY Hervieu
Physical Review B 85 (4), 045423, 2012
Formation of qualified epitaxial graphene on Si substrates using two-step heteroexpitaxy of C-terminated 3C-SiC (-1-1-1) on Si (110)
S Sambonsuge, S Jiao, H Nagasawa, H Fukidome, SN Filimonov, ...
Diamond and Related Materials 67, 51-53, 2016
Step bunching and step “rotation” in homoepitaxial growth of Si on Si (110)-16× 2
A Alguno, SN Filimonov, M Suemitsu
Surface science 605 (7-8), 838-843, 2011
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