Sergey N. Filimonov
Sergey N. Filimonov
Assistant Professor, Department of Physics, Tomsk State University
Verified email at phys.tsu.ru
Title
Cited by
Cited by
Year
Molecular switches from benzene derivatives adsorbed on metal surfaces
W Liu, SN Filimonov, J Carrasco, A Tkatchenko
Nature Communications 4 (1), 1-6, 2013
752013
Terrace-edge-kink model of atomic processes at the permeable steps
SN Filimonov, YY Hervieu
Surface science 553 (1-3), 133-144, 2004
422004
Identification of Ge/Si intermixing processes at the Bi/Ge/Si (111) surface
N Paul, S Filimonov, V Cherepanov, M Çakmak, B Voigtländer
Physical review letters 98 (16), 166104, 2007
252007
Scaling of submonolayer island sizes in surfactant-mediated epitaxy of semiconductors
V Cherepanov, S Filimonov, J Mysliveček, B Voigtländer
Physical Review B 70 (8), 085401, 2004
242004
Dislocation networks in conventional and surfactant-mediated Ge/Si (1 1 1) epitaxy
SN Filimonov, V Cherepanov, N Paul, H Asaoka, J Brona, B Voigtländer
Surface science 599 (1-3), 76-84, 2005
232005
Multistage nucleation of two-dimensional Si islands on Si (111)− 7× 7 during MBE growth: STM experiments and extended rate-equation model
S Filimonov, V Cherepanov, Y Hervieu, B Voigtländer
Physical Review B 76 (3), 035428, 2007
202007
Switchable Schottky contacts: Simultaneously enhanced output current and reduced leakage current
G Su, S Yang, S Li, CJ Butch, SN Filimonov, JC Ren, W Liu
Journal of the American Chemical Society 141 (4), 1628-1635, 2019
182019
Growth rate anomaly in ultralow-pressure chemical vapor deposition of 3C-SiC on Si (001) using monomethylsilane
E Saito, SN Filimonov, M Suemitsu
Japanese Journal of Applied Physics 50 (1R), 010203, 2011
172011
In situ SR-XPS observation of Ni-assisted low-temperature formation of epitaxial graphene on 3C-SiC/Si
M Hasegawa, K Sugawara, R Suto, S Sambonsuge, Y Teraoka, ...
Nanoscale research letters 10 (1), 1-6, 2015
152015
Model of step propagation and step bunching at the sidewalls of nanowires
SN Filimonov, YY Hervieu
Journal of Crystal Growth 427, 60-66, 2015
142015
“Rotating” steps in Si (0 0 1) homoepitaxy
SN Filimonov, B Voigtländer
Surface science 549 (1), 31-36, 2004
142004
Influence of strain on binding energies of Si atoms at Ge (111) surfaces
SN Filimonov, B Voigtländer
Surface science 512 (1-2), L335-L340, 2002
132002
Statistics of second layer nucleation in heteroepitaxial growth
SN Filimonov, YY Hervieu
Surface science 507, 270-275, 2002
112002
Rotated epitaxy of 3C-SiC (111) on Si (110) substrate using monomethylsilane-based gas-source molecular-beam epitaxy
S Sambonsuge, E Saito, MH Jung, H Fukidome, S Filimonov, M Suemitsu
Materials Science Forum 740, 339-343, 2013
92013
Principles of design for substrate-supported molecular switches based on physisorbed and chemisorbed states
S Yang, S Li, SN Filimonov, M Fuentes-Cabrera, W Liu
ACS applied materials & interfaces 10 (31), 26772-26780, 2018
82018
Kinetics of step propagation at the sidewalls of 3D islands and nanowires
SN Filimonov, YY Hervieu
e-Journal of Surface Science and Nanotechnology 12, 68-74, 2014
72014
Selective Adsorption of on Nanostructures
S Korte, K Romanyuk, B Schnitzler, V Cherepanov, B Voigtländer, ...
Physical Review Letters 108 (11), 116101, 2012
72012
Kinetics of two-dimensional island nucleation on reconstructed surfaces
SN Filimonov, YY Hervieu
Physical Review B 85 (4), 045423, 2012
72012
Formation of qualified epitaxial graphene on Si substrates using two-step heteroexpitaxy of C-terminated 3C-SiC (-1-1-1) on Si (110)
S Sambonsuge, S Jiao, H Nagasawa, H Fukidome, SN Filimonov, ...
Diamond and Related Materials 67, 51-53, 2016
62016
Step bunching and step “rotation” in homoepitaxial growth of Si on Si (110)-16× 2
A Alguno, SN Filimonov, M Suemitsu
Surface science 605 (7-8), 838-843, 2011
62011
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