Recombination activity of contaminated dislocations in silicon: A model describing electron-beam-induced current contrast behavior V Kveder, M Kittler, W Schröter Physical Review B 63 (11), 115208, 2001 | 335 | 2001 |
Low threading dislocation density Ge deposited on Si (1 0 0) using RPCVD Y Yamamoto, P Zaumseil, T Arguirov, M Kittler, B Tillack Solid-State Electronics 60 (1), 2-6, 2011 | 167 | 2011 |
Germanium tin: silicon photonics toward the mid-infrared E Kasper, M Kittler, M Oehme, T Arguirov Photonics Research 1 (2), 69-76, 2013 | 158 | 2013 |
Influence of copper contamination on recombination activity of misfit dislocations in SiGe/Si epilayers: Temperature dependence of activity as a marker characterizing the … M Kittler, C Ulhaq‐Bouillet, V Higgs Journal of Applied Physics 78 (7), 4573-4583, 1995 | 138 | 1995 |
GeSn heterojunction LEDs on Si substrates M Oehme, K Kostecki, T Arguirov, G Mussler, K Ye, M Gollhofer, M Schmid, ... IEEE Photonics Technology Letters 26 (2), 187-189, 2013 | 104 | 2013 |
Recombination properties of structurally well defined NiSi2 precipitates in silicon M Kittler, J Lärz, W Seifert, M Seibt, W Schröter Applied physics letters 58 (9), 911-913, 1991 | 99 | 1991 |
Influence of dislocation density on recombination at grain boundaries in multicrystalline silicon W Seifert, G Morgenstern, M Kittler Semiconductor Science and Technology 8 (9), 1687, 1993 | 93 | 1993 |
GeSn/Ge multiquantum well photodetectors on Si substrates M Oehme, D Widmann, K Kostecki, P Zaumseil, B Schwartz, M Gollhofer, ... Optics letters 39 (16), 4711-4714, 2014 | 91 | 2014 |
Residual stress in Si nanocrystals embedded in a SiO2 matrix T Arguirov, T Mchedlidze, M Kittler, R Rölver, B Berghoff, M Först, ... Applied Physics Letters 89 (5), 2006 | 88 | 2006 |
Regular dislocation networks in silicon as a tool for nanostructure devices used in optics, biology, and electronics M Kittler, X Yu, T Mchedlidze, T Arguirov, OF Vyvenko, W Seifert, ... Small 3 (6), 964-973, 2007 | 80 | 2007 |
Assessing the performance of two-dimensional dopant profiling techniques N Duhayon, P Eyben, M Fouchier, T Clarysse, W Vandervorst, D Álvarez, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004 | 78 | 2004 |
Silicon solar cells with antireflection diamond-like carbon and silicon carbide films NI Klyui, VG Litovchenko, AG Rozhin, VN Dikusha, M Kittler, W Seifert Solar energy materials and solar cells 72 (1-4), 597-603, 2002 | 71 | 2002 |
Room-temperature luminescence and electron-beam-induced current (EBIC) recombination behaviour of crystal defects in multicrystalline silicon M Kittler, W Seifert, T Arguirov, I Tarasov, S Ostapenko Solar Energy Materials and Solar Cells 72 (1-4), 465-472, 2002 | 69 | 2002 |
Electroluminescence of GeSn/Ge MQW LEDs on Si substrate B Schwartz, M Oehme, K Kostecki, D Widmann, M Gollhofer, R Koerner, ... Optics letters 40 (13), 3209-3212, 2015 | 60 | 2015 |
Silicon‐based light emitters M Kittler, M Reiche, T Arguirov, W Seifert, X Yu physica status solidi (a) 203 (4), 802-809, 2006 | 59 | 2006 |
On the sensitivity of the EBIC technique as applied to defect investigations in silicon M Kittler, W Seifert physica status solidi (a) 66 (2), 573-583, 1981 | 58 | 1981 |
EBIC and luminescence studies of defects in solar cells O Breitenstein, J Bauer, M Kittler, T Arguirov, W Seifert Scanning: The Journal of Scanning Microscopies 30 (4), 331-338, 2008 | 57 | 2008 |
On the origin of EBIC defect contrast in silicon. A reflection on injection and temperature dependent investigations M Kittler, W Seifert physica status solidi (a) 138 (2), 687-693, 1993 | 57 | 1993 |
Recombination activity of misfit dislocations in silicon M Kittler, W Seifert, V Higgs physica status solidi (a) 137 (2), 327-335, 1993 | 56 | 1993 |
Silicon-based light emission after ion implantation M Kittler, T Arguirov, A Fischer, W Seifert Optical Materials 27 (5), 967-972, 2005 | 55 | 2005 |