| Standards for the characterization of endurance in resistive switching devices M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ... ACS nano 15 (11), 17214-17231, 2021 | 148 | 2021 |
| A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition S Duenas, H Castán, H García, E San Andrés, M Toledano-Luque, I Mártil, ... Semiconductor science and technology 20 (10), 1044, 2005 | 102 | 2005 |
| Admittance spectroscopy in junctions J Barbolla, S Duenas, L Bailon Solid-state electronics 35 (3), 285-297, 1992 | 101 | 1992 |
| Thin film capacitors and process for making them S Duenas, RR Kola, HY Kumagai, MY Lau, PA Sullivan, KL Tai US Patent 6,075,691, 2000 | 79 | 2000 |
| Influence of single and double deposition temperatures on the interface quality of atomic layer deposited Al2O3 dielectric thin films on silicon S Dueñas, H Castán, H García, A De Castro, L Bailón, K Kukli, A Aidla, ... Journal of applied physics 99 (5), 2006 | 65 | 2006 |
| Deposition of thin films by the electron cyclotron resonance and its application to structures S Garcia, I Martil, G Gonzalez Diaz, E Castan, S Duenas, M Fernandez Journal of Applied Physics 83 (1), 332-338, 1998 | 65 | 1998 |
| Electrical characteristics of metal-insulator-semiconductor structures with atomic layer deposited Al2O3, HfO2, and nanolaminates on different silicon substrates F Campabadal, JM Rafí, M Zabala, O Beldarrain, A Faigón, H Castán, ... Journal of Vacuum Science & Technology B 29 (1), 2011 | 62 | 2011 |
| Experimental observation of conductance transients in metal-insulator-semiconductor structures S Dueñas, R Peláez, E Castan, R Pinacho, L Quintanilla, J Barbolla, ... Applied physics letters 71 (6), 826-828, 1997 | 55 | 1997 |
| Electrical properties of atomic-layer-deposited thin gadolinium oxide high-k gate dielectrics S Dueñas, H Castán, H Garcia, A Gómez, L Bailón, K Kukli, T Hatanpää, ... Journal of The Electrochemical Society 154 (10), G207, 2007 | 44 | 2007 |
| Experimental verification of intermediate band formation on titanium-implanted silicon H Castán, E Pérez, H García, S Dueñas, L Bailón, J Olea, D Pastor, ... Journal of Applied Physics 113 (2), 2013 | 42 | 2013 |
| The electrical-interface quality of as-grown atomic-layer-deposited disordered HfO2 on p-and n-type silicon S Duenas, H Castán, H Garcia, J Barbolla, K Kukli, J Aarik, A Aidla Semiconductor science and technology 19 (9), 1141, 2004 | 40 | 2004 |
| Interface quality study of ECR-deposited and rapid thermal annealed silicon nitride Al/SiNx: H/InP and Al/SiNx: H/In0. 53Ga0. 47As structures by DLTS and conductance transient … H Castán, S Dueñas, J Barbolla, E Redondo, N Blanco, I Mártil, ... Microelectronics Reliability 40 (4-5), 845-848, 2000 | 40 | 2000 |
| A physically based model for resistive memories including a detailed temperature and variability description G González-Cordero, MB González, H García, F Campabadal, S Dueñas, ... Microelectronic Engineering 178, 26-29, 2017 | 37 | 2017 |
| Programming Pulse Width Assessment for Reliable and Low-Energy Endurance Performance in Al:HfO2-Based RRAM Arrays E Pérez, Ó González Ossorio, S Dueñas, H Castán, H García, C Wenger Electronics 9 (5), 864, 2020 | 33 | 2020 |
| Optical admittance spectroscopy: A new method for deep level characterization S Duenas, M Jaraiz, J Vicente, E Rubio, L Bailon, J Barbolla Journal of applied physics 61 (7), 2541-2545, 1987 | 33 | 1987 |
| Electrical characterization of atomic-layer-deposited hafnium oxide films from hafnium tetrakis (dimethylamide) and water/ozone: Effects of growth temperature, oxygen source … H García, H Castán, S Dueñas, L Bailón, F Campabadal, O Beldarrain, ... Journal of Vacuum Science & Technology A 31 (1), 2013 | 32 | 2013 |
| Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks H Castán, S Dueñas, H García, A Gómez, L Bailón, M Toledano-Luque, ... Journal of Applied Physics 107 (11), 2010 | 27 | 2010 |
| Study of the admittance hysteresis cycles in TiN/Ti/HfO2/W-based RRAM devices S Dueñas, H Castán, H García, E Miranda, MB Gonzalez, F Campabadal Microelectronic Engineering 178, 30-33, 2017 | 25 | 2017 |
| 2 MeV electron irradiation effects on the electrical characteristics of metal–oxide–silicon capacitors with atomic layer deposited Al2O3, HfO2 and nanolaminated dielectrics JM Rafí, F Campabadal, H Ohyama, K Takakura, I Tsunoda, M Zabala, ... Solid-state electronics 79, 65-74, 2013 | 25 | 2013 |
| Controlling the intermediate conductance states in RRAM devices for synaptic applications H García, OG Ossorio, S Dueñas, H Castán Microelectronic Engineering 215, 110984, 2019 | 24 | 2019 |
