How far are we from making metamaterials by self‐organization? The microstructure of highly anisotropic particles with an SRR‐like geometry DA Pawlak, S Turczynski, M Gajc, K Kolodziejak, R Diduszko, ... Advanced Functional Materials 20 (7), 1116-1124, 2010 | 135 | 2010 |
AlGaN/GaN HEMT structures on ammono bulk GaN substrate P Kruszewski, P Prystawko, I Kasalynas, A Nowakowska-Siwinska, ... Semiconductor Science and Technology 29 (7), 075004, 2014 | 71 | 2014 |
Targeted nano-drug delivery of colchicine against colon cancer cells by means of mesoporous silica nanoparticles K AbouAitah, HA Hassan, A Swiderska-Sroda, L Gohar, OG Shaker, ... Cancers 12 (1), 144, 2020 | 65 | 2020 |
Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy C Bazioti, E Papadomanolaki, T Kehagias, T Walther, ... Journal of Applied Physics 118 (15), 2015 | 64 | 2015 |
Improved compromise between the electrical conductivity and hardness of the thermo-mechanically treated CuCrZr alloy M Kulczyk, W Pachla, J Godek, J Smalc-Koziorowska, J Skiba, S Przybysz, ... Materials Science and Engineering: A 724, 45-52, 2018 | 58 | 2018 |
Elimination of trench defects and V-pits from InGaN/GaN structures J Smalc-Koziorowska, E Grzanka, R Czernecki, D Schiavon, ... Applied Physics Letters 106 (10), 2015 | 55 | 2015 |
Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy M Siekacz, M Sawicka, H Turski, G Cywiński, A Khachapuridze, P Perlin, ... Journal of Applied Physics 110 (6), 2011 | 54 | 2011 |
Electron microscopy observations of radiation damage in irradiated and annealed tungsten J Grzonka, J Smalc-Koziorowska, OV Ogorodnikova, M Mayer, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2014 | 42 | 2014 |
Ni–Au contacts to p-type GaN–Structure and properties J Smalc-Koziorowska, S Grzanka, E Litwin-Staszewska, R Piotrzkowski, ... Solid-state electronics 54 (7), 701-709, 2010 | 41 | 2010 |
InGaN light emitting diodes for 415 nm–520 nm spectral range by plasma assisted MBE M Siekacz, MŁ Szańkowska, A Feduniewicz‐Zmuda, ... physica status solidi c 6 (S2 2), S917-S920, 2009 | 38 | 2009 |
Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seeds M Amilusik, T Sochacki, B Lucznik, M Fijalkowski, J Smalc-Koziorowska, ... Journal of crystal growth 403, 48-54, 2014 | 37 | 2014 |
Homoepitaxial growth of HVPE-GaN doped with Si M Iwinska, T Sochacki, M Amilusik, P Kempisty, B Lucznik, M Fijalkowski, ... Journal of Crystal Growth 456, 91-96, 2016 | 36 | 2016 |
Growth mechanism of InGaN by plasma assisted molecular beam epitaxy H Turski, M Siekacz, M Sawicka, G Cywinski, M Krysko, S Grzanka, ... Journal of Vacuum Science & Technology B 29 (3), 2011 | 36 | 2011 |
Growth of thin AlInN∕ GaInN quantum wells for applications to high-speed intersubband devices at telecommunication wavelengths G Cywiński, C Skierbiszewski, A Fedunieiwcz-Żmuda, M Siekacz, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006 | 34 | 2006 |
Mechanism of Reduced Sintering Temperature of Al2O3–ZrO2 Nanocomposites Obtained by Microwave Hydrothermal Synthesis I Koltsov, J Smalc-Koziorowska, M Prześniak-Welenc, M Małysa, ... Materials 11 (5), 829, 2018 | 33 | 2018 |
Revealing extended defects in HVPE-grown GaN JL Weyher, I Grzegory, J Smalc-Koziorowska, T Paskova Journal of Crystal Growth 312 (18), 2611-2615, 2010 | 32 | 2010 |
The defect character of GaN growth on r-plane sapphire J Smalc-Koziorowska, G Tsiakatouras, A Lotsari, A Georgakilas, ... Journal of Applied Physics 107 (7), 2010 | 32 | 2010 |
Towards Organized Hybrid Nanomaterials at the Air/Water Interface Based on Liquid‐Crystal/ZnO Nanocrystals J Paczesny, M Wolska‐Pietkiewicz, I Binkiewicz, Z Wróbel, M Wadowska, ... Chemistry–A European Journal 21 (47), 16941-16947, 2015 | 30 | 2015 |
Influence of hydrogen and TMIn on indium incorporation in MOVPE growth of InGaN layers R Czernecki, S Kret, P Kempisty, E Grzanka, J Plesiewicz, G Targowski, ... Journal of crystal growth 402, 330-336, 2014 | 30 | 2014 |
Step-flow anisotropy of the -plane GaN () grown under nitrogen-rich conditions by plasma-assisted molecular beam epitaxy M Sawicka, H Turski, M Siekacz, J Smalc-Koziorowska, M Kryśko, ... Physical Review B 83 (24), 245434, 2011 | 30 | 2011 |