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Steven Wienecke
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Demonstration of constant 8 W/mm power density at 10, 30, and 94 GHz in state-of-the-art millimeter-wave N-polar GaN MISHEMTs
B Romanczyk, S Wienecke, M Guidry, H Li, E Ahmadi, X Zheng, S Keller, ...
IEEE Transactions on Electron Devices 65 (1), 45-50, 2017
1982017
N-polar GaN cap MISHEMT with record power density exceeding 6.5 W/mm at 94 GHz
S Wienecke, B Romanczyk, M Guidry, H Li, E Ahmadi, K Hestroffer, ...
IEEE Electron Device Letters 38 (3), 359-362, 2017
1092017
N-polar GaN HEMTs exhibiting record breakdown voltage over 2000 V and low dynamic on-resistance
OS Koksaldi, J Haller, H Li, B Romanczyk, M Guidry, S Wienecke, S Keller, ...
IEEE Electron Device Letters 39 (7), 1014-1017, 2018
872018
N-polar deep recess MISHEMTs with record 2.9 W/mm at 94 GHz
S Wienecke, B Romanczyk, M Guidry, H Li, X Zheng, E Ahmadi, ...
IEEE Electron Device Letters 37 (6), 713-716, 2016
482016
N-polar GaN MIS-HEMTs on sapphire with high combination of power gain cutoff frequency and three-terminal breakdown voltage
X Zheng, M Guidry, H Li, E Ahmadi, K Hestroffer, B Romanczyk, ...
IEEE Electron Device Letters 37 (1), 77-80, 2015
462015
W-band N-polar GaN MISHEMTs with high power and record 27.8% efficiency at 94 GHz
B Romanczyk, M Guidry, S Wienecke, H Li, E Ahmadi, X Zheng, S Keller, ...
2016 IEEE International Electron Devices Meeting (IEDM), 3.5. 1-3.5. 4, 2016
372016
In-situ metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors
X Liu, R Yeluri, J Kim, S Lal, A Raman, C Lund, S Wienecke, J Lu, ...
Applied Physics Letters 103 (5), 2013
352013
Small-signal model extraction of mm-wave N-polar GaN MISHEMT exhibiting record performance: Analysis of gain and validation by 94 GHz loadpull
M Guidry, S Wienecke, B Romanczyk, H Li, X Zheng, E Ahmadi, ...
2016 IEEE MTT-S International Microwave Symposium (IMS), 1-4, 2016
322016
Observation of hot electron and impact ionization in N-polar GaN MIS-HEMTs
D Bisi, C De Santi, M Meneghini, S Wienecke, M Guidry, H Li, E Ahmadi, ...
IEEE Electron Device Letters 39 (7), 1007-1010, 2018
292018
High frequency N-polar GaN planar MIS-HEMTs on sapphire with high breakdown and low dispersion
X Zheng, H Li, E Ahmadi, K Hestroffer, M Guidry, B Romanczyk, ...
2016 Lester Eastman Conference (LEC), 42-45, 2016
282016
Elimination of columnar microstructure in N-face InAlN, lattice-matched to GaN, grown by plasma-assisted molecular beam epitaxy in the N-rich regime
E Ahmadi, R Shivaraman, F Wu, S Wienecke, SW Kaun, S Keller, ...
Applied Physics Letters 104 (7), 2014
282014
High performance N-polar GaN HEMTs with OIP3/Pdc∼12dB at 10GHz
A Arias, P Rowell, J Bergman, M Urteaga, K Shinohara, X Zheng, H Li, ...
2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-3, 2017
272017
Demonstration of 30 GHz OIP3/PDC> 10 dB by mm-wave N-polar deep recess MISHEMTs
M Guidry, B Romanczyk, H Li, E Ahmadi, S Wienecke, X Zheng, S Keller, ...
2019 14th European Microwave Integrated Circuits Conference (EuMIC), 64-67, 2019
252019
1200V GaN switches on sapphire substrate
G Gupta, M Kanamura, B Swenson, D Bisi, B Romanczyk, C Neufeld, ...
2022 IEEE 34th International Symposium on Power Semiconductor Devices and …, 2022
242022
Analysis of MOCVD SiNx Passivated N-Polar GaN MIS-HEMTs on Sapphire With High
X Zheng, H Li, M Guidry, B Romanczyk, E Ahmadi, K Hestroffer, ...
IEEE Electron Device Letters 39 (3), 409-412, 2018
242018
Record 34.2% efficient mm‐wave N‐polar AlGaN/GaN MISHEMT at 87 GHz
B Romanczyk, M Guidry, S Wienecke, H Li, E Ahmadi, X Zheng, S Keller, ...
Electronics Letters 52 (21), 1813-1814, 2016
242016
W-band passive load pull system for on-wafer characterization of high power density N-polar GaN devices based on output match and drive power requirements vs. gate width
M Guidry, S Wienecke, B Romanczyk, X Zheng, H Li, E Ahmadi, ...
2016 87th ARFTG Microwave Measurement Conference (ARFTG), 1-4, 2016
242016
Observation of ID-VD Kink in N-Polar GaN MIS-HEMTs at Cryogenic Temperatures
D Bisi, S Wienecke, B Romanczyk, H Li, E Ahmadi, S Keller, M Guidry, ...
IEEE Electron Device Letters 41 (3), 345-348, 2020
212020
InGaN lattice constant engineering via growth on (In, Ga) N/GaN nanostripe arrays
S Keller, C Lund, T Whyland, Y Hu, C Neufeld, S Chan, S Wienecke, F Wu, ...
Semiconductor Science and Technology 30 (10), 105020, 2015
172015
In situ metalorganic chemical vapor deposition of Al2O3 on N-face GaN and evidence of polarity induced fixed charge
X Liu, J Kim, DJ Suntrup, S Wienecke, M Tahhan, R Yeluri, SH Chan, J Lu, ...
Applied Physics Letters 104 (26), 2014
172014
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