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Vishal Ajit Shah
Vishal Ajit Shah
Associate Professor, University of Warwick
Geverifieerd e-mailadres voor warwick.ac.uk - Homepage
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Ultra-high hole mobility exceeding one million in a strained germanium quantum well
A Dobbie, M Myronov, RJH Morris, AHA Hassan, MJ Prest, VA Shah, ...
Applied Physics Letters 101 (17), 2012
1032012
Reverse graded relaxed buffers for high Ge content SiGe virtual substrates
VA Shah, A Dobbie, M Myronov, DJF Fulgoni, LJ Nash, DR Leadley
Applied Physics Letters 93 (19), 2008
1022008
Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates
VA Shah, A Dobbie, M Myronov, DR Leadley
Journal of Applied Physics 107 (6), 2010
952010
Modelling the inhomogeneous SiC Schottky interface
PM Gammon, A Pérez-Tomás, VA Shah, O Vavasour, E Donchev, ...
Journal of Applied Physics 114 (22), 2013
922013
High quality relaxed Ge layers grown directly on a Si (0 0 1) substrate
VA Shah, A Dobbie, M Myronov, DR Leadley
Solid-State Electronics 62 (1), 189-194, 2011
802011
Characterization and modeling of nn Si∕ SiC heterojunction diodes
A Pérez-Tomás, MR Jennings, M Davis, JA Covington, PA Mawby, ...
Journal of applied physics 102 (1), 2007
692007
Spin transport in germanium at room temperature
C Shen, T Trypiniotis, KY Lee, SN Holmes, R Mansell, M Husain, V Shah, ...
Applied Physics Letters 97 (16), 2010
642010
Effect of layer thickness on structural quality of Ge epilayers grown directly on Si (001)
VA Shah, A Dobbie, M Myronov, DR Leadley
Thin Solid Films 519 (22), 7911-7917, 2011
532011
An extremely high room temperature mobility of two-dimensional holes in a strained Ge quantum well heterostructure grown by reduced pressure chemical vapor deposition
M Myronov, C Morrison, J Halpin, S Rhead, C Casteleiro, J Foronda, ...
Japanese Journal of Applied Physics 53 (4S), 04EH02, 2014
362014
High doped MBE Si p–n and n–n heterojunction diodes on 4H-SiC
A Pérez-Tomás, MR Jennings, M Davis, V Shah, T Grasby, JA Covington, ...
Microelectronics Journal 38 (12), 1233-1237, 2007
352007
Analysis of inhomogeneous Ge/SiC heterojunction diodes
PM Gammon, A Pérez-Tomás, VA Shah, GJ Roberts, MR Jennings, ...
Journal of Applied Physics 106 (9), 2009
342009
High quality strained Ge epilayers on a Si0. 2Ge0. 8/Ge/Si (100) global strain-tuning platform
M Myronov, A Dobbie, VA Shah, XC Liu, VH Nguyen, DR Leadley
Electrochemical and Solid-State Letters 13 (11), H388, 2010
322010
Strain enhanced electron cooling in a degenerately doped semiconductor
MJ Prest, JT Muhonen, M Prunnila, D Gunnarsson, VA Shah, ...
Applied Physics Letters 99 (25), 2011
262011
Strain dependence of electron-phonon energy loss rate in many-valley semiconductors
JT Muhonen, MJ Prest, M Prunnila, D Gunnarsson, VA Shah, A Dobbie, ...
Applied Physics Letters 98 (18), 2011
232011
Mapping the strain and tilt of a suspended 3C-SiC membrane through micro X-ray diffraction
G Colston, SD Rhead, VA Shah, OJ Newell, IP Dolbnya, DR Leadley, ...
Materials & Design 103, 244-248, 2016
212016
Cryogenic characterization of commercial SiC power MOSFETs
H Chen, PM Gammon, VA Shah, CA Fisher, CW Chan, S Jahdi, ...
Materials Science Forum 821, 777-780, 2015
212015
Precision plasma etching of Si, Ge, and Ge: P by SF6 with added O2
C Wongwanitwattana, VA Shah, M Myronov, EHC Parker, T Whall, ...
Journal of Vacuum Science & Technology A 32 (3), 2014
212014
Interface characteristics of nn and pn Ge/SiC heterojunction diodes formed by molecular beam epitaxy deposition
PM Gammon, A Pérez-Tomás, MR Jennings, VA Shah, SA Boden, ...
Journal of Applied Physics 107 (12), 2010
212010
Reverse graded strain relaxed SiGe buffers for CMOS and optoelectronic integration
VA Shah, A Dobbie, M Myronov, DR Leadley
Thin Solid Films 520 (8), 3227-3231, 2012
202012
A study of temperature-related non-linearity at the metal-silicon interface
PM Gammon, E Donchev, A Pérez-Tomás, VA Shah, JS Pang, PK Petrov, ...
Journal of Applied Physics 112 (11), 2012
172012
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Artikelen 1–20