Dirk Fahle
Dirk Fahle
Aixtron SE
Geverifieerd e-mailadres voor aixtron.com
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The effect of the inversion channel at the AlN/Si interface on the vertical breakdown characteristics of GaN-based devices
H Yacoub, D Fahle, M Finken, H Hahn, C Blumberg, W Prost, H Kalisch, ...
Semiconductor Science and Technology 29 (11), 115012, 2014
Demonstration of GaN integrated half-bridge with on-chip drivers on 200-mm engineered substrates
X Li, K Geens, W Guo, S You, M Zhao, D Fahle, V Odnoblyudov, ...
IEEE Electron Device Letters 40 (9), 1499-1502, 2019
Effect of different carbon doping techniques on the dynamic properties of GaN-on-Si buffers
H Yacoub, C Mauder, S Leone, M Eickelkamp, D Fahle, M Heuken, ...
IEEE Transactions on Electron Devices 64 (3), 991-997, 2017
Effect of carbon doping level on static and dynamic properties of AlGaN/GaN heterostructures grown on silicon
H Yacoub, T Zweipfennig, G Lükens, H Behmenburg, D Fahle, ...
IEEE Transactions on Electron Devices 65 (8), 3192-3198, 2018
Electrical properties of quasi-vertical Schottky diodes
W Witte, D Fahle, H Koch, M Heuken, H Kalisch, A Vescan
Semiconductor Science and Technology 27 (8), 085015, 2012
Analysis of an AlGaN/AlN super-lattice buffer concept for 650-V low-dispersion and high-reliability GaN HEMTs
L Heuken, M Kortemeyer, A Ottaviani, M Schröder, M Alomari, D Fahle, ...
IEEE Transactions on Electron Devices 67 (3), 1113-1119, 2020
Effect of stress voltage on the dynamic buffer response of GaN-on-silicon transistors
H Yacoub, D Fahle, M Eickelkamp, A Wille, C Mauder, M Heuken, ...
Journal of Applied Physics 119 (13), 2016
45‐3: Invited Paper: Enabling the Next Era of Display Technologies by Micro LED MOCVD Processing
A Beckers, D Fahle, C Mauder, T Kruecken, AR Boyd, M Heuken
SID Symposium Digest of Technical Papers 49 (1), 601-603, 2018
Integration of 650 V GaN power ICs on 200 mm engineered substrates
X Li, K Geens, D Wellekens, M Zhao, A Magnani, N Amirifar, B Bakeroot, ...
IEEE Transactions on Semiconductor Manufacturing 33 (4), 534-538, 2020
Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO2 substrates
C Mauder, B Reuters, KR Wang, D Fahle, A Trampert, MV Rzheutskii, ...
Journal of crystal growth 315 (1), 246-249, 2011
In situ SiN passivation of AlInN/GaN heterostructures by MOVPE
H Behmenburg, LR Khoshroo, C Mauder, N Ketteniss, KH Lee, ...
physica status solidi c 7 (7‐8), 2104-2106, 2010
Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures
S Besendörfer, E Meissner, T Zweipfennig, H Yacoub, D Fahle, ...
AIP Advances 10 (4), 2020
650 V p-GaN gate power HEMTs on 200 mm engineered substrates
K Geens, X Li, M Zhao, W Guo, D Wellekens, N Posthuma, D Fahle, ...
2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2019
Physical modeling of charge trapping effects in GaN/Si devices and incorporation in the ASM-HEMT model
M Pradhan, M Alomari, M Moser, D Fahle, H Hahn, M Heuken, ...
IEEE Journal of the Electron Devices Society 9, 748-755, 2021
Vertical GaN devices: Process and reliability
S You, K Geens, M Borga, H Liang, H Hahn, D Fahle, M Heuken, ...
Microelectronics Reliability 126, 114218, 2021
The effect of AlN nucleation growth conditions on the inversion channel formation at the AlN/silicon interface
H Yacoub, M Eickelkamp, D Fahle, C Mauder, A Alam, M Heuken, ...
2015 73rd Annual Device Research Conference (DRC), 175-176, 2015
On the anisotropic wafer curvature of GaN-based heterostructures on Si (1 1 0) substrates grown by MOVPE
C Mauder, ID Booker, D Fahle, H Boukiour, H Behmenburg, LR Khoshroo, ...
Journal of crystal growth 315 (1), 220-223, 2011
Impact of gate dielectric thickness on the electrical properties of AlGaN/GaN MISHFETs on Si (111) substrate
M Eickelkamp, D Fahle, J Lindner, M Heuken, C Lautensack, H Kalisch, ...
physica status solidi (a) 207 (6), 1342-1344, 2010
Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application
A Vohra, K Geens, M Zhao, O Syshchyk, H Hahn, D Fahle, B Bakeroot, ...
Applied Physics Letters 120 (26), 2022
Characterization of charge injection and photovoltaic effects of hybrid inorganic-organic GaN/pentacene heterostructures
M Slawinski, M Weingarten, S Axmann, F Urbain, D Fahle, M Heuken, ...
Applied Physics Letters 103 (15), 2013
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