Juan M Lopez-Gonzalez
Juan M Lopez-Gonzalez
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The importance of bandgap narrowing distribution between the conduction and valence bands in abrupt HBTs
JM Lopez-Gonzalez, L Prat
IEEE Transactions on electron devices 44 (7), 1046-1051, 1997
Numerical modelling of abrupt InP/InGaAs HBTs
JM López-González, L Prat
Solid-State Electronics 39 (4), 523-527, 1996
A parallel 3D semiconductor device simulator for gradual heterojunction bipolar transistors
A J. García‐Loureiro, JM López‐González, T F. Pena
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2003
Numerical simulations of rear point‐contacted solar cells on 2.2 Ωcm p‐type c‐Si substrates
JM López‐González, I Martín, P Ortega, A Orpella, R Alcubilla
Progress in Photovoltaics: Research and Applications 23 (1), 69-77, 2015
Rear contact pattern optimization based on 3D simulations for IBC solar cells with point-like doped contacts
D Carrió, P Ortega, I Martín, G López, JM López-González, A Orpella, ...
Energy procedia 55, 47-52, 2014
Front contact optimization of industrial scale CIGS solar cells for low solar concentration using 2D physical modeling
JM Delgado-Sanchez, JM López-González, A Orpella, ...
Renewable energy 101, 90-95, 2017
Numerical analysis of abrupt heterojunction bipolar transistors
AJ Garcia‐Loureiro, JM Lopez‐Gonzalez, TF Pena, L Prat
International Journal of Numerical Modelling: Electronic Networks, Devices …, 1998
A comparison between Monte Carlo and extended drift-diffusion models for abrupt InP/InGaAs HBTs
P Garcias-Salvà, JM López-González, L Prat
IEEE Transactions on Electron Devices 48 (6), 1045-1053, 2001
Parallel finite element method to solve the 3D Poisson equation and its application to abrupt heterojunction bipolar transistors
AJ Garcia‐Loureiro, TF Pena, JM Lopez‐Gonzalez, L Prat
International Journal for Numerical Methods in Engineering 49 (5), 639-652, 2000
Analytical model for abrupt HBTs with application to InPInGaAs type
JM López-González, P Garcias-Salvà, L Prat
Solid-State Electronics 41 (9), 1277-1283, 1997
Microscale characterization of surface recombination at the vicinity of laser-processed regions in c-Si solar cells
A Roigé, JO Ossó, I Martín, C Voz, P Ortega, JM López-González, ...
IEEE Journal of Photovoltaics 6 (2), 426-431, 2016
Effects of the emitter-base effective-mass difference on the collector current in InP/InGaAs HBTs: A Monte Carlo study
P Garcias-Salvà, JM Lopez-Gonzalez, L Prat
Microelectronic Engineering 51, 415-424, 2000
Physics-based model for tunnel heterostructure bipolar transistors
JM López-González, AJ Garcia-Loureiro
Semiconductor science and technology 19 (11), 1300, 2004
Bulk recombination in the neutral base region of abrupt InP/InGaAs HBTs
JM López-González, P Garcias-Salvà, L Prat
Solid-State Electronics 43 (7), 1307-1311, 1999
Contribution to the study of the Heterojunction Bipolar Transistors
JM López-González
PhD thesis, Universidad Politécnica de Cataluña, 1994.(in Spanish), 1994
Influence of wavelength and pulse duration on the selective laser ablation of WOx, VOx and MoOx thin films.
C Munoz-Garcia, D Canteli, S Lauzurica, M Morales, C Molpeceres, ...
Surfaces and Interfaces 28, 101613, 2022
DopLa solar cells with texturized front surface
I Martín, A Coll, G López, PR Ortega, JM López-González, R Alcubilla
Energy Procedia 92, 949-955, 2016
DopLaCell: a new c-Si solar cell based on laser processing of dielectric films
I Martín, JM López-González, M Colina, A Orpella, R Alcubilla
Proc. of the 28th EUPVSEC Conference, Paris, France, 1311-1316, 2013
Parallel domain decomposition applied to 3D simulation of gradual HBTs
AJ García-Loureiro, TF Pena, JM López-González, LP Viñas
Journal of Modeling and Simulation of Microsystems 1 (2), 115-120, 1999
Preconditioners and nonstationary iterative methods for semiconductor device simulation
AJ Garcia-Loureiro, TF Pena, JM Löpez-Gonzälez, LI Prat
Conferencia de Dispositivos Electrönicos (CDE-97), 403-409, 1997
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