1200-V normally off GaN-on-Si field-effect transistors with low dynamic on-resistance R Chu, A Corrion, M Chen, R Li, D Wong, D Zehnder, B Hughes, ...
IEEE Electron Device Letters 32 (5), 632-634, 2011
424 2011 Solar module array with reconfigurable tile RA Sherif, KS Boutros
US Patent 6,350,944, 2002
233 2002 Schottky barrier engineering in III–V nitrides via the piezoelectric effect ET Yu, XZ Dang, LS Yu, D Qiao, PM Asbeck, SS Lau, GJ Sullivan, ...
Applied physics letters 73 (13), 1880-1882, 1998
200 1998 Integrated semiconductor circuits on photo-active Germanium substrates KS Boutros, NH Karam, DD Krut, M Haddad
US Patent 7,151,307, 2006
199 2006 Effect of hydrogen on the indium incorporation in InGaN epitaxial films EL Piner, MK Behbehani, NA El-Masry, FG McIntosh, JC Roberts, ...
Applied physics letters 70 (4), 461-463, 1997
183 1997 Capacitance–voltage characterization of AlN/GaN metal–insulator–semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition T Hashizume, E Alekseev, D Pavlidis, KS Boutros, J Redwing
Journal of Applied Physics 88 (4), 1983-1986, 2000
152 2000 Ni and Ti Schottky barriers on LS Yu, DJ Qiao, QJ Xing, SS Lau, KS Boutros, JM Redwing
Applied Physics Letters 73 (2), 238-240, 1998
145 1998 Measurement of drift mobility in AlGaN/GaN heterostructure field-effect transistor XZ Dang, PM Asbeck, ET Yu, GJ Sullivan, MY Chen, BT McDermott, ...
Applied physics letters 74 (25), 3890-3892, 1999
136 1999 Growth and characterization of AlInGaN quaternary alloys FG McIntosh, KS Boutros, JC Roberts, SM Bedair, EL Piner, NA El‐Masry
Applied physics letters 68 (1), 40-42, 1996
129 1996 Monolithic bypass-diode and solar-cell string assembly K Boutros, D Krut, N Karam
US Patent App. 10/134,191, 2002
121 2002 Persistent photoconductivity and defect levels in n -type AlGaN/GaN heterostructures XZ Dang, CD Wang, ET Yu, KS Boutros, JM Redwing
Applied physics letters 72 (21), 2745-2747, 1998
119 1998 Gate‐recessed normally‐off GaN‐on‐ Si HEMT using a new O2 ‐BCl3 digital etching technique SD Burnham, K Boutros, P Hashimoto, C Butler, DWS Wong, M Hu, ...
physica status solidi c 7 (7‐8), 2010-2012, 2010
114 2010 Growth and characterization of In-based nitride compounds SM Bedair, FG McIntosh, JC Roberts, EL Piner, KS Boutros, NA El-Masry
Journal of crystal growth 178 (1-2), 32-44, 1997
82 1997 An Al/sub 0.3/Ga/sub 0.7/N/GaN undoped channel heterostructure field effect transistor with Fmax of 107 GHz R Li, SJ Cai, L Wong, Y Chen, KL Wang, RP Smith, SC Martin, KS Boutros, ...
IEEE Electron Device Letters 20 (7), 323-325, 1999
80 1999 GaN HFET switching characteristics at 350V/20A and synchronous boost converter performance at 1MHz B Hughes, J Lazar, S Hulsey, D Zehnder, D Matic, K Boutros
2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and …, 2012
77 2012 AlGaN/GaN AM Darwish, K Boutros, B Luo, BD Huebschman, E Viveiros, HA Hung
IEEE Transactions on Microwave Theory and Techniques 54 (12), 4456-4463, 2006
70 2006 High quality InGaN films by atomic layer epitaxy KS Boutros, FG McIntosh, JC Roberts, SM Bedair, EL Piner, NA El‐Masry
Applied physics letters 67 (13), 1856-1858, 1995
69 * 1995 Facet roughness analysis for InGaN/GaN lasers with cleaved facets DA Stocker, EF Schubert, W Grieshaber, KS Boutros, JM Redwing
Applied Physics Letters 73 (14), 1925-1927, 1998
68 1998 GaN power electronics for automotive application KS Boutros, R Chu, B Hughes
2012 IEEE Energytech, 1-4, 2012
66 2012 Internal photoemission measurement of Schottky barrier height for Ni on AlGaN/GaN heterostructure LS Yu, QJ Xing, D Qiao, SS Lau, KS Boutros, JM Redwing
Applied physics letters 73 (26), 3917-3919, 1998
65 1998 