K.S. Boutros
K.S. Boutros
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1200-V normally off GaN-on-Si field-effect transistors with low dynamic on-resistance
R Chu, A Corrion, M Chen, R Li, D Wong, D Zehnder, B Hughes, ...
IEEE Electron Device Letters 32 (5), 632-634, 2011
Solar module array with reconfigurable tile
RA Sherif, KS Boutros
US Patent 6,350,944, 2002
Schottky barrier engineering in III–V nitrides via the piezoelectric effect
ET Yu, XZ Dang, LS Yu, D Qiao, PM Asbeck, SS Lau, GJ Sullivan, ...
Applied physics letters 73 (13), 1880-1882, 1998
Integrated semiconductor circuits on photo-active Germanium substrates
KS Boutros, NH Karam, DD Krut, M Haddad
US Patent 7,151,307, 2006
Effect of hydrogen on the indium incorporation in InGaN epitaxial films
EL Piner, MK Behbehani, NA El-Masry, FG McIntosh, JC Roberts, ...
Applied physics letters 70 (4), 461-463, 1997
Capacitance–voltage characterization of AlN/GaN metal–insulator–semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition
T Hashizume, E Alekseev, D Pavlidis, KS Boutros, J Redwing
Journal of Applied Physics 88 (4), 1983-1986, 2000
Ni and Ti Schottky barriers on grown on SiC substrates
LS Yu, DJ Qiao, QJ Xing, SS Lau, KS Boutros, JM Redwing
Applied Physics Letters 73 (2), 238-240, 1998
Measurement of drift mobility in AlGaN/GaN heterostructure field-effect transistor
XZ Dang, PM Asbeck, ET Yu, GJ Sullivan, MY Chen, BT McDermott, ...
Applied physics letters 74 (25), 3890-3892, 1999
Growth and characterization of AlInGaN quaternary alloys
FG McIntosh, KS Boutros, JC Roberts, SM Bedair, EL Piner, NA El‐Masry
Applied physics letters 68 (1), 40-42, 1996
Monolithic bypass-diode and solar-cell string assembly
K Boutros, D Krut, N Karam
US Patent App. 10/134,191, 2002
Persistent photoconductivity and defect levels in n-type AlGaN/GaN heterostructures
XZ Dang, CD Wang, ET Yu, KS Boutros, JM Redwing
Applied physics letters 72 (21), 2745-2747, 1998
Gate‐recessed normally‐off GaN‐on‐ Si HEMT using a new O2‐BCl3 digital etching technique
SD Burnham, K Boutros, P Hashimoto, C Butler, DWS Wong, M Hu, ...
physica status solidi c 7 (7‐8), 2010-2012, 2010
Growth and characterization of In-based nitride compounds
SM Bedair, FG McIntosh, JC Roberts, EL Piner, KS Boutros, NA El-Masry
Journal of crystal growth 178 (1-2), 32-44, 1997
An Al/sub 0.3/Ga/sub 0.7/N/GaN undoped channel heterostructure field effect transistor with Fmax of 107 GHz
R Li, SJ Cai, L Wong, Y Chen, KL Wang, RP Smith, SC Martin, KS Boutros, ...
IEEE Electron Device Letters 20 (7), 323-325, 1999
GaN HFET switching characteristics at 350V/20A and synchronous boost converter performance at 1MHz
B Hughes, J Lazar, S Hulsey, D Zehnder, D Matic, K Boutros
2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and …, 2012
AlGaN/GaN -Band 5-W MMIC Amplifier
AM Darwish, K Boutros, B Luo, BD Huebschman, E Viveiros, HA Hung
IEEE Transactions on Microwave Theory and Techniques 54 (12), 4456-4463, 2006
High quality InGaN films by atomic layer epitaxy
KS Boutros, FG McIntosh, JC Roberts, SM Bedair, EL Piner, NA El‐Masry
Applied physics letters 67 (13), 1856-1858, 1995
Facet roughness analysis for InGaN/GaN lasers with cleaved facets
DA Stocker, EF Schubert, W Grieshaber, KS Boutros, JM Redwing
Applied Physics Letters 73 (14), 1925-1927, 1998
GaN power electronics for automotive application
KS Boutros, R Chu, B Hughes
2012 IEEE Energytech, 1-4, 2012
Internal photoemission measurement of Schottky barrier height for Ni on AlGaN/GaN heterostructure
LS Yu, QJ Xing, D Qiao, SS Lau, KS Boutros, JM Redwing
Applied physics letters 73 (26), 3917-3919, 1998
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