—a narrow-gap ferromagnetic semiconductorT Wojtowicz, G Cywiński, WL Lim, X Liu, M Dobrowolska, JK Furdyna, ...
Applied Physics Letters 82 (24), 4310-4312, 2003
100 2003 Graphene epoxy-based composites as efficient electromagnetic absorbers in the extremely high-frequency band Z Barani, F Kargar, K Godziszewski, A Rehman, Y Yashchyshyn, ...
ACS applied materials & interfaces 12 (25), 28635-28644, 2020
67 2020 Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy C Skierbiszewski, H Turski, G Muziol, M Siekacz, M Sawicka, G Cywiński, ...
Journal of Physics D: Applied Physics 47 (7), 073001, 2014
67 2014 Electrically Insulating Flexible Films with Quasi‐1D van der Waals Fillers as Efficient Electromagnetic Shields in the GHz and Sub‐THz Frequency Bands Z Barani, F Kargar, Y Ghafouri, S Ghosh, K Godziszewski, S Baraghani, ...
Advanced Materials 33 (11), 2007286, 2021
61 2021 Cathodoluminescence study of diluted magnetic semiconductor quantum well/micromagnet hybrid structures J Kossut, I Yamakawa, A Nakamura, G Cywiński, K Fronc, M Czeczott, ...
Applied Physics Letters 79 (12), 1789-1791, 2001
56 2001 Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy M Siekacz, M Sawicka, H Turski, G Cywiński, A Khachapuridze, P Perlin, ...
Journal of Applied Physics 110 (6), 2011
54 2011 Growth and properties of ferromagnetic In1− xMnxSb alloys T Wojtowicz, WL Lim, X Liu, G Cywiński, M Kutrowski, LV Titova, K Yee, ...
Physica E: Low-Dimensional Systems and Nanostructures 20 (3-4), 325-332, 2004
52 2004 3-D-printed flat optics for THz linear scanners J Suszek, A Siemion, MS Bieda, N Błocki, D Coquillat, G Cywiński, ...
IEEE transactions on Terahertz Science and Technology 5 (2), 314-316, 2015
49 2015 Growth of InGaN and InGaN/InGaN quantum wells by plasma-assisted molecular beam epitaxy M Siekacz, A Feduniewicz-Żmuda, G Cywiński, M Kryśko, I Grzegory, ...
Journal of crystal growth 310 (17), 3983-3986, 2008
45 2008 Application of a composite plasmonic substrate for the suppression of an electromagnetic mode leakage in InGaN laser diodes P Perlin, K Holc, M Sarzyński, W Scheibenzuber, Ł Marona, R Czernecki, ...
Applied Physics Letters 95 (26), 2009
41 2009 Contactless electroreflectance of InGaN layers with indium content≤ 36%: The surface band bending, band gap bowing, and Stokes shift issues R Kudrawiec, M Siekacz, M Kryśko, G Cywiński, J Misiewicz, ...
Journal of Applied Physics 106 (11), 2009
38 2009 InGaN light emitting diodes for 415 nm–520 nm spectral range by plasma assisted MBE M Siekacz, MŁ Szańkowska, A Feduniewicz‐Zmuda, ...
physica status solidi c 6 (S2 2), S917-S920, 2009
38 2009 The surface boundary conditions in GaN/AlGaN/GaN transistor heterostructures M Gladysiewicz, R Kudrawiec, J Misiewicz, G Cywinski, M Siekacz, ...
Applied Physics Letters 98 (23), 2011
37 2011 Growth mechanism of InGaN by plasma assisted molecular beam epitaxy H Turski, M Siekacz, M Sawicka, G Cywinski, M Krysko, S Grzanka, ...
Journal of Vacuum Science & Technology B 29 (3), 2011
36 2011 Acceleration of the spin-lattice relaxation in diluted magnetic quantum wells in the presence of a two-dimensional electron gas AV Scherbakov, DR Yakovlev, AV Akimov, IA Merkulov, B König, W Ossau, ...
Physical Review B 64 (15), 155205, 2001
35 2001 Growth of thin AlInN∕ GaInN quantum wells for applications to high-speed intersubband devices at telecommunication wavelengths G Cywiński, C Skierbiszewski, A Fedunieiwcz-Żmuda, M Siekacz, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006
34 2006 Nature of the 1/f noise in graphene—direct evidence for the mobility fluctuation mechanism A Rehman, JAD Notario, JS Sanchez, YM Meziani, G Cywiński, W Knap, ...
Nanoscale 14 (19), 7242-7249, 2022
32 2022 Contactless electroreflectance studies of Fermi level position on c-plane GaN surface grown by molecular beam epitaxy and metalorganic vapor phase epitaxy R Kudrawiec, M Gladysiewicz, L Janicki, J Misiewicz, G Cywinski, ...
Applied Physics Letters 100 (18), 2012
32 2012 AlGaN-free laser diodes by plasma-assisted molecular beam epitaxy C Skierbiszewski, M Siekacz, H Turski, G Muzioł, M Sawicka, ...
Applied physics express 5 (2), 022104, 2012
32 2012 Low frequency noise and trap density in GaN/AlGaN field effect transistors P Sai, J Jorudas, M Dub, M Sakowicz, V Jakštas, DB But, P Prystawko, ...
Applied Physics Letters 115 (18), 2019
29 2019