| Thermal analysis of degradation in Ga2O3–In2O3–ZnO thin-film transistors M Fujii, H Yano, T Hatayama, Y Uraoka, T Fuyuki, JS Jung, JY Kwon Japanese journal of applied physics 47 (8R), 6236, 2008 | 98 | 2008 |
| Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing M Fujii, Y Ishikawa, R Ishihara, J van der Cingel, MRT Mofrad, M Horita, ... Applied Physics Letters 102 (12), 2013 | 52 | 2013 |
| Experimental and theoretical analysis of degradation in Ga2O3–In2O3–ZnO thin-film transistors M Fujii, Y Uraoka, T Fuyuki, JS Jung, JY Kwon Japanese journal of applied physics 48 (4S), 04C091, 2009 | 51 | 2009 |
| The influence of fluorinated silicon nitride gate insulator on positive bias stability toward highly reliable amorphous InGaZnO thin-film transistors H Yamazaki, Y Ishikawa, M Fujii, Y Ueoka, M Fujiwara, E Takahashi, ... ECS Journal of Solid State Science and Technology 3 (2), Q20, 2013 | 43 | 2013 |
| Density of states in amorphous In-Ga-Zn-O thin-film transistor under negative bias illumination stress Y Ueoka, Y Ishikawa, JP Bermundo, H Yamazaki, S Urakawa, M Fujii, ... ECS Journal of Solid State Science and Technology 3 (9), Q3001, 2014 | 35 | 2014 |
| High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric MN Fujii, Y Ishikawa, K Miwa, H Okada, Y Uraoka, S Ono Scientific Reports 5 (1), 18168, 2015 | 31 | 2015 |
| Highly reliable photosensitive organic-inorganic hybrid passivation layers for a-InGaZnO thin-film transistors JP Bermundo, Y Ishikawa, H Yamazaki, T Nonaka, MN Fujii, Y Uraoka Applied Physics Letters 107 (3), 2015 | 28 | 2015 |
| Unique phenomenon in degradation of amorphous In2O3–Ga2O3–ZnO thin-film transistors under dynamic stress M Fujii, Y Ishikawa, M Horita, Y Uraoka Applied physics express 4 (10), 104103, 2011 | 26 | 2011 |
| Hot carrier effects in InGaZnO thin-film transistor T Takahashi, R Miyanaga, MN Fujii, J Tanaka, K Takechi, H Tanabe, ... Applied Physics Express 12 (9), 094007, 2019 | 25 | 2019 |
| Effect of excimer laser annealing on a-InGaZnO thin-film transistors passivated by solution-processed hybrid passivation layers JP Bermundo, Y Ishikawa, MN Fujii, T Nonaka, R Ishihara, H Ikenoue, ... Journal of Physics D: Applied Physics 49 (3), 035102, 2015 | 25 | 2015 |
| Significant mobility improvement of amorphous In-Ga-Zn-O thin-film transistors annealed in a low temperature wet ambient environment MPA Jallorina, JPS Bermundo, MN Fujii, Y Ishikawa, Y Uraoka Applied Physics Letters 112 (19), 2018 | 24 | 2018 |
| Comparison between effects of PECVD-SiOx and thermal ALD-AlOx passivation layers on characteristics of amorphous InGaZnO TFTs J Tanaka, Y Ueoka, K Yoshitsugu, M Fujii, Y Ishikawa, Y Uraoka, ... ECS Journal of Solid State Science and Technology 4 (7), Q61, 2015 | 23 | 2015 |
| High-performance fully solution-processed oxide thin-film transistors via photo-assisted role tuning of InZnO DC Corsino, JPS Bermundo, C Kulchaisit, MN Fujii, Y Ishikawa, ... ACS Applied Electronic Materials 2 (8), 2398-2407, 2020 | 21 | 2020 |
| Reliability improvement of amorphous InGaZnO thin-film transistors by less hydroxyl-groups siloxane passivation C Kulchaisit, Y Ishikawa, MN Fujii, H Yamazaki, JPS Bermundo, ... Journal of Display Technology 12 (3), 263-267, 2016 | 19 | 2016 |
| H and Au diffusion in high mobility a-InGaZnO thin-film transistors via low temperature KrF excimer laser annealing JPS Bermundo, Y Ishikawa, MN Fujii, H Ikenoue, Y Uraoka Applied Physics Letters 110 (13), 2017 | 17 | 2017 |
| Unique degradation under AC stress in high-mobility amorphous In–W–Zn–O thin-film transistors T Takahashi, MN Fujii, R Miyanaga, M Miyanaga, Y Ishikawa, Y Uraoka Applied Physics Express 13 (5), 054003, 2020 | 15 | 2020 |
| Instantaneous semiconductor-to-conductor transformation of a transparent oxide semiconductor a-InGaZnO at 45 C JPS Bermundo, Y Ishikawa, MN Fujii, H Ikenoue, Y Uraoka ACS applied materials & interfaces 10 (29), 24590-24597, 2018 | 15 | 2018 |
| High performance top gate a-IGZO TFT utilizing siloxane hybrid material as a gate insulator C Kulchaisit, JPS Bermundo, MN Fujii, Y Ishikawa, Y Uraoka AIP Advances 8 (9), 2018 | 13 | 2018 |
| Improvement in bias stress stability of solution-processed amorphous InZnO thin-film transistors via low-temperature photosensitive passivation AS Safaruddin, JPS Bermundo, N Yoshida, T Nonaka, MN Fujii, ... IEEE Electron Device Letters 41 (9), 1372-1375, 2020 | 12 | 2020 |
| Dimethylaluminum hydride for atomic layer deposition of Al2O3 passivation for amorphous InGaZnO thin-film transistors DC Corsino, JPS Bermundo, MN Fujii, K Takahashi, Y Ishikawa, Y Uraoka Applied Physics Express 11 (6), 061103, 2018 | 12 | 2018 |
Juan Paolo S. BermundoNara Institute of Science and TechnologyVerified email at ms.naist.jp
