| Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels B Arnaudov, T Paskova, PP Paskov, B Magnusson, E Valcheva, ... Physical Review B 69 (11), 115216, 2004 | 235 | 2004 |
| Large-scale synthesis of free-standing N-doped graphene using microwave plasma N Bundaleska, J Henriques, M Abrashev, AM Botelho do Rego, ... Scientific reports 8 (1), 12595, 2018 | 99 | 2018 |
| Towards large-scale in free-standing graphene and N-graphene sheets E Tatarova, A Dias, J Henriques, M Abrashev, N Bundaleska, E Kovacevic, ... Scientific reports 7 (1), 10175, 2017 | 88 | 2017 |
| Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers T Paskova, V Darakchieva, PP Paskov, J Birch, E Valcheva, POA Persson, ... Journal of crystal growth 281 (1), 55-61, 2005 | 81 | 2005 |
| Bragg and Laue x-ray diffraction study of dislocations in thick hydride vapor phase epitaxy GaN films V Ratnikov, R Kyutt, T Shubina, T Paskova, E Valcheva, B Monemar Journal of Applied Physics 88 (11), 6252-6259, 2000 | 66 | 2000 |
| dielectric function from the midinfrared to the ultraviolet range A Kasic, E Valcheva, B Monemar, H Lu, WJ Schaff Physical Review B 70 (11), 115217, 2004 | 64 | 2004 |
| Deformation potentials of the and modes of InN V Darakchieva, PP Paskov, E Valcheva, T Paskova, B Monemar, ... Applied physics letters 84 (18), 3636-3638, 2004 | 57 | 2004 |
| Lattice parameters of GaN layers grown on a-plane sapphire: Effect of in-plane strain anisotropy V Darakchieva, PP Paskov, T Paskova, E Valcheva, B Monemar, ... Applied physics letters 82 (5), 703-705, 2003 | 53 | 2003 |
| Phonon mode behavior in strained wurtzite superlattices V Darakchieva, E Valcheva, PP Paskov, M Schubert, T Paskova, ... Physical Review B 71 (11), 115329, 2005 | 50 | 2005 |
| Multilayer model for Hall effect data analysis of semiconductor structures with step-changed conductivity B Arnaudov, T Paskova, S Evtimova, E Valcheva, M Heuken, B Monemar Physical Review B 67 (4), 045314, 2003 | 49 | 2003 |
| Optical and dielectric properties of dc magnetron sputtered AlN thin films correlated with deposition conditions V Dimitrova, D Manova, E Valcheva Materials Science and Engineering: B 68 (1), 1-4, 1999 | 48 | 1999 |
| Defect and stress relaxation in HVPE-GaN films using high temperature reactively sputtered AlN buffer T Paskova, E Valcheva, J Birch, S Tungasmita, POÅ Persson, PP Paskov, ... Journal of crystal growth 230 (3-4), 381-386, 2001 | 40 | 2001 |
| Interface structure of hydride vapor phase epitaxial GaN grown with high-temperature reactively sputtered AlN buffer E Valcheva, T Paskova, S Tungasmita, POÅ Persson, J Birch, ... Applied Physics Letters 76 (14), 1860-1862, 2000 | 36 | 2000 |
| Epitaxial growth and orientation of AlN thin films on Si (001) substrates deposited by reactive magnetron sputtering E Valcheva, J Birch, PO Persson, S Tungasmita, L Hultman Journal of applied physics 100 (12), 2006 | 30 | 2006 |
| Hydride vapor-phase epitaxial GaN thick films for quasi-substrate applications: Strain distribution and wafer bending T Paskova, V Darakchieva, E Valcheva, PP Paskov, IG Ivanov, ... Journal of electronic materials 33, 389-394, 2004 | 28 | 2004 |
| Hydride Vapour Phase Homoepitaxial Growth of GaN on MOCVD-Grown ‘Templates’ T Paskova, S Tungasmita, E Valcheva, EB Svedberg, B Arnaudov, ... Materials Research Society Internet Journal of Nitride Semiconductor …, 2000 | 28 | 2000 |
| Nanopipes and their relationship to the growth mode in thick HVPE-GaN layers E Valcheva, T Paskova, B Monemar Journal of crystal growth 255 (1-2), 19-26, 2003 | 25 | 2003 |
| Polar and nonpolar GaN grown by HVPE: Preferable substrates for nitride‐based emitting devices T Paskova, PP Paskov, E Valcheva, V Darakchieva, J Birch, A Kasic, ... physica status solidi (a) 201 (10), 2265-2270, 2004 | 23 | 2004 |
| Infrared ellipsometry and Raman studies of hexagonal InN films: correlation between strain and vibrational properties V Darakchieva, PP Paskov, E Valcheva, T Paskova, M Schubert, ... Superlattices and Microstructures 36 (4-6), 573-580, 2004 | 19 | 2004 |
| Prospects for microwave plasma synthesized N-graphene in secondary electron emission mitigation applications N Bundaleska, A Dias, N Bundaleski, E Felizardo, J Henriques, ... Scientific Reports 10 (1), 13013, 2020 | 18 | 2020 |
