H2 gas sensor performance of NiO at high temperatures in gas mixtures H Steinebach, S Kannan, L Rieth, F Solzbacher Sensors and Actuators B: Chemical 151 (1), 162-168, 2010 | 235 | 2010 |
NOx sensitivity of In2O3 thin film layers with and without promoter layers at high temperatures S Kannan, L Rieth, F Solzbacher Sensors and Actuators B: Chemical 149 (1), 8-19, 2010 | 52 | 2010 |
Selectivity, stability and repeatability of In2O3 thin films towards NOx at high temperatures (≥ 500° C) S Kannan, H Steinebach, L Rieth, F Solzbacher Sensors and Actuators B: Chemical 148 (1), 126-134, 2010 | 43 | 2010 |
PECVD Growth Of Six:Ge1-xFilms For High Speed Devices and MEMS S Kannan, D Allred, PC Taylor 21st International Conference on Amorphous and Nanocrystalline …, 2005 | 13 | 2005 |
III-nitride semiconductor device with doped epi structures J Wan, M Tungare, P Kim, SE Park, S Nelson, S Kannan US Patent 9,608,075, 2017 | 7 | 2017 |
Semiconductor component including aluminum silicon nitride layers S Nelson, S Kannan US Patent 9,761,672, 2017 | 2 | 2017 |
Semiconductor component with a multi-layered nucleation body J Wan, S Nelson, S Kannan, P Kim US Patent 9,728,610, 2017 | | 2017 |
Novel Mechanism Responsible for RDSON Shift in GaN-on-Si Power Devices H Kim, M Tungare, S Kannan International Conference on Nitride Semiconductors, 2017 | | 2017 |
GaN-on-Si epitaxial defects – Impact on device yield and their corresponding control through Epitaxy process. S Kannan, B guver International Conference on Nitride Semiconductors, 2017 | | 2017 |
Controllability of AlGaN/GaN Epi wafer Bow S Park, S Kannan, J Wan, M Tungare, P Kim. US Patent App. 15/628,723, 2017 | | 2017 |
Charakterisierung eines neuen mikrostrukturierten Substrats für gassensitive, nanokristalline Metalloxide K Kühn, S Kannan, S Bütefisch, L Rieth, F Solzbacher, A Schütze MikroSystemTechnik, 2011 | | 2011 |
Novel High Temperature Materials for In-Situ Sensing Devices F Solzbacher, A Virkar, L Rieth, S Kannan, X Chen, H Steinebach Univ. of Utah, Salt Lake City, UT (United States), 2009 | | 2009 |
Selectivity, stability and repeatability of In2O3 NOx sensor at high temperatures (> 500 C) S Kannan, F Solzbacher NanoUtah 2009, Salt Lake City, Utah, 2009 | | 2009 |
High Temperature Detection of Nitrogen Oxides by Indium Oxide Solid State Sensors with Gold Promoter Layers S Kannan, L Rieth, F Solzbacher Material Research Society (MRS) Spring Conference, 2009, 2009 | | 2009 |
Effect of Au promoter layers on NOx sensitivity of Indium Oxide solid state sensors at high temperatures (> 500 ˚C) S Kannan, M Sorenson, L Rieth, F Solzbacher 54th AVS International Symposium & Exhibition, 2007 | | 2007 |
PECVD growth of SiGe layers for high speed devices and MEMS. S Kannan, D Allred, C Taylor APS March Meeting Abstracts, J15. 006, 2005 | | 2005 |