Samuel Aldana Delgado
Samuel Aldana Delgado
Postdoctoral research fellow in Trinity College Dublin
Verified email at - Homepage
Cited by
Cited by
A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs
S Aldana, P García-Fernández, A Rodríguez-Fernández, R Romero-Zaliz, ...
Journal of Physics D: Applied Physics 50 (33), 335103, 2017
Facile synthesis of magnetic agarose microfibers by directed self-assembly in W/O emulsions
S Aldana, F Vereda, R Hidalgo-Alvarez, J de Vicente
Polymer 93, 61-64, 2016
Resistive switching in HfO2 based valence change memories, a comprehensive 3D kinetic Monte Carlo approach
S Aldana, P García-Fernández, R Romero-Zaliz, MB González, ...
Journal of Physics D: Applied Physics 53 (22), 225106, 2020
Resistive Switching with Self-Rectifying Tunability and Influence of the Oxide Layer Thickness in Ni/HfO2/n+-Si RRAM Devices
A Rodriguez-Fernandez, S Aldana, F Campabadal, J Sune, E Miranda, ...
IEEE Transactions on Electron Devices 64 (8), 3159-3166, 2017
An in-depth description of bipolar resistive switching in Cu/HfOx/Pt devices, a 3D kinetic Monte Carlo simulation approach
S Aldana, JB Roldán, P García-Fernández, J Suñe, R Romero-Zaliz, ...
Journal of Applied Physics 123 (15), 154501, 2018
Kinetic Monte Carlo analysis of data retention in Al: HfO2-based resistive random access memories
S Aldana, E Pérez, F Jiménez-Molinos, C Wenger, JB Roldán
Semiconductor Science and Technology 35 (11), 115012, 2020
Thermal study of multilayer resistive random access memories based on HfO2 and Al2O3 oxides
M Cazorla, S Aldana, M Maestro, MB González, F Campabadal, E Moreno, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2019
Variability estimation in resistive switching devices, a numerical and kinetic Monte Carlo perspective
D Maldonado, S Aldana, MB Gonzalez, F Jiménez-Molinos, MJ Ibáñez, ...
Microelectronic Engineering 257, 111736, 2022
Analysis of conductive filament density in resistive random access memories: a 3D kinetic Monte Carlo approach
S Aldana, P García-Fernández, R Romero-Zaliz, F Jiménez-Molinos, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2018
A Kinetic Monte Carlo Simulator to Characterize Resistive Switching and Charge Conduction in Ni/HfO2/Si RRAMs
S Aldana, P Garcia-Fernandez, R Romero-Zaliz, MB Gonzalez, ...
2018 Spanish Conference on Electron Devices (CDE), 1-4, 2018
An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices
D Maldonado, C Aguilera-Pedregosa, G Vinuesa, H García, S Dueñas, ...
Chaos, Solitons & Fractals 160, 112247, 2022
Impact of Intrinsic Series Resistance on the Reversible Dielectric Breakdown Kinetics in HfO2 Memristors
MB González, M Maestro-Izquierdo, F Campabadal, S Aldana, ...
2020 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2020
Synaptic devices based on HfO2 memristors
MB González, M Maestro-Izquierdo, S Poblador, M Zabala, ...
Mem-elements for neuromorphic circuits with artificial intelligence …, 2021
Parameter extraction techniques for the analysis and modeling of resistive memories
D Maldonado, S Aldana, MB González, F Jiménez-Molinos, ...
Microelectronic Engineering, 111876, 2022
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