| Resistive switching in HfO2 based valence change memories, a comprehensive 3D kinetic Monte Carlo approach S Aldana, P García-Fernández, R Romero-Zaliz, MB González, ... Journal of Physics D: Applied Physics 53 (22), 225106, 2020 | 87 | 2020 |
| A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO2/Si-n+-based RRAMs S Aldana, P García-Fernández, A Rodríguez-Fernández, R Romero-Zaliz, ... Journal of Physics D: Applied Physics 50 (33), 335103, 2017 | 78 | 2017 |
| Facile synthesis of magnetic agarose microfibers by directed self-assembly in W/O emulsions S Aldana, F Vereda, R Hidalgo-Alvarez, J de Vicente Polymer 93, 61-64, 2016 | 58 | 2016 |
| Resistive Switching with Self-Rectifying Tunability and Influence of the Oxide Layer Thickness in Ni/HfO2/n+-Si RRAM Devices A Rodriguez-Fernandez, S Aldana, F Campabadal, J Sune, E Miranda, ... IEEE Transactions on Electron Devices 64 (8), 3159-3166, 2017 | 37 | 2017 |
| Kinetic Monte Carlo analysis of data retention in Al: HfO2-based resistive random access memories S Aldana, E Pérez, F Jiménez-Molinos, C Wenger, JB Roldán Semiconductor Science and Technology 35 (11), 115012, 2020 | 34 | 2020 |
| An in-depth description of bipolar resistive switching in Cu/HfOx/Pt devices, a 3D kinetic Monte Carlo simulation approach S Aldana, JB Roldán, P García-Fernández, J Suñe, R Romero-Zaliz, ... Journal of Applied Physics 123 (15), 2018 | 31 | 2018 |
| Variability estimation in resistive switching devices, a numerical and kinetic Monte Carlo perspective D Maldonado, S Aldana, MB Gonzalez, F Jiménez-Molinos, MJ Ibáñez, ... Microelectronic Engineering 257, 111736, 2022 | 30 | 2022 |
| Parameter extraction techniques for the analysis and modeling of resistive memories D Maldonado, S Aldana, MB González, F Jiménez-Molinos, ... Microelectronic Engineering 265, 111876, 2022 | 23 | 2022 |
| Thermal study of multilayer resistive random access memories based on HfO2 and Al2O3 oxides M Cazorla, S Aldana, M Maestro, MB González, F Campabadal, E Moreno, ... Journal of Vacuum Science & Technology B 37 (1), 2019 | 19 | 2019 |
| An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices D Maldonado, C Aguilera-Pedregosa, G Vinuesa, H García, S Dueñas, ... Chaos, Solitons & Fractals 160, 112247, 2022 | 15 | 2022 |
| Analysis of conductive filament density in resistive random access memories: a 3D kinetic Monte Carlo approach S Aldana, P García-Fernández, R Romero-Zaliz, F Jiménez-Molinos, ... Journal of Vacuum Science & Technology B 36 (6), 2018 | 11 | 2018 |
| Unravelling the Data Retention Mechanisms under Thermal Stress on 2D Memristors S Aldana, H Zhang ACS omega 8 (30), 27543-27552, 2023 | 9 | 2023 |
| On the switching mechanism and optimisation of ion irradiation enabled 2D memristors S Aldana, J Jadwiszczak, H Zhang Nanoscale 15, 6408-6416, 2023 | 9 | 2023 |
| Impact of Intrinsic Series Resistance on the Reversible Dielectric Breakdown Kinetics in HfO2 Memristors MB González, M Maestro-Izquierdo, F Campabadal, S Aldana, ... 2020 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2020 | 8 | 2020 |
| A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories D Maldonado, G Vinuesa, S Aldana, FL Aguirre, A Cantudo, H García, ... Materials Science in Semiconductor Processing 169, 107878, 2024 | 3 | 2024 |
| Synaptic devices based on HfO2 memristors MB González, M Maestro-Izquierdo, S Poblador, M Zabala, ... Mem-elements for Neuromorphic Circuits with Artificial Intelligence …, 2021 | 3 | 2021 |
| A Kinetic Monte Carlo Simulator to Characterize Resistive Switching and Charge Conduction in Ni/HfO2/Si RRAMs S Aldana, P Garcia-Fernandez, R Romero-Zaliz, MB Gonzalez, ... 2018 Spanish Conference on Electron Devices (CDE), 1-4, 2018 | 3 | 2018 |
| Understanding Substrate Effects on 2D MoS2 Growth: A Kinetic Monte Carlo Approach S Aldana, L Wang, IA Spiridon, H Zhang Advanced Materials Interfaces 11 (32), 2400209, 2024 | 2 | 2024 |
| Control of Cu morphology on TaN barrier and combined Ru-TaN barrier/liner substrates for nanoscale interconnects from atomistic kinetic Monte Carlo simulations S Aldana, CL Nies, M Nolan arXiv preprint arXiv:2410.06133, 2024 | 1 | 2024 |
| Understanding Substrate Effects on Two-Dimensional MoS2 Growth: a Kinetic Monte Carlo Approach S Aldana, I Spiridon, L Wang, H Zhang arXiv preprint arXiv:2401.01661, 2024 | | 2024 |
Juan B. RoldánDepartment of Electronics and Computer Technology. Granada University (Spain)Verified email at ugr.es
