| Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction R Yeluri, J Lu, CA Hurni, DA Browne, S Chowdhury, S Keller, JS Speck, ... Applied Physics Letters 106 (18), 2015 | 114 | 2015 |
| On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors D Bisi, SH Chan, X Liu, R Yeluri, S Keller, M Meneghini, G Meneghesso, ... Applied Physics Letters 108 (11), 2016 | 57 | 2016 |
| Capacitance-voltage characterization of interfaces between positive valence band offset dielectrics and wide bandgap semiconductors R Yeluri, X Liu, BL Swenson, J Lu, S Keller, UK Mishra Journal of Applied Physics 114 (8), 2013 | 52 | 2013 |
| Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown P-type gallium nitride as a current blocking layer S Chowdhury, R Yeluri, C Hurni, UK Mishra, I Ben-Yaacov US Patent 8,937,338, 2015 | 45 | 2015 |
| Fixed charge and trap states of in situ Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors grown by metalorganic chemical vapor deposition X Liu, J Kim, R Yeluri, S Lal, H Li, J Lu, S Keller, B Mazumder, JS Speck, ... Journal of Applied Physics 114 (16), 2013 | 43 | 2013 |
| Effects of H2O Pretreatment on the Capacitance–Voltage Characteristics of Atomic-Layer-Deposited Al2O3 on Ga-Face GaN Metal–Oxide–Semiconductor … X Liu, R Yeluri, J Lu, UK Mishra Journal of electronic materials 42, 33-39, 2013 | 40 | 2013 |
| Compact models of spreading resistances for electrical/thermal design of devices and ICs S Karmalkar, PV Mohan, HP Nair, R Yeluri IEEE Transactions on Electron Devices 54 (7), 1734-1743, 2007 | 40 | 2007 |
| Interface states at the SiN/AlGaN interface on GaN heterojunctions for Ga and N-polar material R Yeluri, BL Swenson, UK Mishra Journal of Applied Physics 111 (4), 2012 | 38 | 2012 |
| In-situ metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors X Liu, R Yeluri, J Kim, S Lal, A Raman, C Lund, S Wienecke, J Lu, ... Applied Physics Letters 103 (5), 2013 | 35 | 2013 |
| Enhancement-mode m-plane AlGaN/GaN heterojunction field-effect transistors with+ 3 V of threshold voltage using Al2O3 deposited by atomic layer deposition T Fujiwara, R Yeluri, D Denninghoff, J Lu, S Keller, JS Speck, ... Applied physics express 4 (9), 096501, 2011 | 33 | 2011 |
| Very high channel conductivity in ultra-thin channel N-polar GaN/(AlN, InAlN, AlGaN) high electron mobility hetero-junctions grown by metalorganic chemical vapor deposition J Lu, D Denninghoff, R Yeluri, S Lal, G Gupta, M Laurent, S Keller, ... Applied Physics Letters 102 (23), 2013 | 29 | 2013 |
| Atom probe tomography studies of Al2O3 gate dielectrics on GaN B Mazumder, X Liu, R Yeluri, F Wu, UK Mishra, JS Speck Journal of Applied Physics 116 (13), 2014 | 21 | 2014 |
| In situ metalorganic chemical vapor deposition of Al2O3 on N-face GaN and evidence of polarity induced fixed charge X Liu, J Kim, DJ Suntrup, S Wienecke, M Tahhan, R Yeluri, SH Chan, J Lu, ... Applied Physics Letters 104 (26), 2014 | 18 | 2014 |
| Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition X Liu, CM Jackson, F Wu, B Mazumder, R Yeluri, J Kim, S Keller, ... Journal of Applied Physics 119 (1), 2016 | 17 | 2016 |
| Dielectric stress tests and capacitance-voltage analysis to evaluate the effect of post deposition annealing on Al2O3 films deposited on GaN R Yeluri, X Liu, M Guidry, OS Koksaldi, S Lal, J Kim, J Lu, S Keller, ... Applied Physics Letters 105 (22), 2014 | 17 | 2014 |
| Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al2O3 dielectrics grown on GaN SH Chan, D Bisi, X Liu, R Yeluri, M Tahhan, S Keller, SP DenBaars, ... Journal of Applied Physics 122 (17), 2017 | 7 | 2017 |
| Metalorganic chemical vapor deposition of oxide dielectrics on N-polar III-nitride semiconductors with high interface quality and tunable fixed interface charge X Liu, UK Mishra, S Keller, J Kim, M Laurent, J Lu, R Yeluri, SH Chan US Patent 9,281,183, 2016 | 6 | 2016 |
| Low ON-resistance and high current GaN vertical electron transistors with buried p-GaN layers R Yeluri, J Lu, D Browne, CA Hurni, S Chowdhury, S Keller, JS Speck, ... 72nd Device Research Conference, 253-254, 2014 | 3 | 2014 |
| Use of Second Harmonic and Thermal Effects of Laser Voltage Probing for Better Fault Isolation R Yeluri, R Thirugnanasambandam, C Wagner, J Urtecho, JM Neirynck ISTFA 2016: Proceedings from the 42nd International Symposium for Testing …, 2016 | 2 | 2016 |
| Gallium Nitride Vertical Electron Transistors for High Power Applications R Yeluri University of California, Santa Barbara, 2013 | 2 | 2013 |
Umesh MishraUCSBVerified email at ece.ucsb.edu
