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David Maldonado Correa
David Maldonado Correa
Department of Electronics and Computer Technology. University of Granada (Spain)
Verified email at ugr.es
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Cited by
Year
Stochastic resonance in a metal-oxide memristive device
AN Mikhaylov, DV Guseinov, AI Belov, DS Korolev, VA Shishmakova, ...
Chaos, Solitons & Fractals 144, 110723, 2021
542021
Analysis of the statistics of device-to-device and cycle-to-cycle variability in TiN/Ti/Al: HfO2/TiN RRAMs
E Pérez, D Maldonado, C Acal, JE Ruiz-Castro, FJ Alonso, AM Aguilera, ...
Microelectronic Engineering 214, 104-109, 2019
522019
Time series statistical analysis: A powerful tool to evaluate the variability of resistive switching memories
JB Roldán, FJ Alonso, AM Aguilera, D Maldonado, M Lanza
Journal of Applied Physics 125 (17), 174504, 2019
352019
On the thermal models for resistive random access memory circuit simulation
JB Roldán, G González-Cordero, R Picos, E Miranda, F Palumbo, ...
Nanomaterials 11 (5), 1261, 2021
222021
Experimental evaluation of the dynamic route map in the reset transition of memristive ReRAMs
D Maldonado, MB Gonzalez, F Campabadal, F Jimenez-Molinos, ...
Chaos, Solitons & Fractals 139, 110288, 2020
192020
Memristor variability and stochastic physical properties modeling from a multivariate time series approach
FJ Alonso, D Maldonado, AM Aguilera, JB Roldan
Chaos, Solitons & Fractals 143, 110461, 2021
172021
Experimental study of the series resistance effect and its impact on the compact modeling of the conduction characteristics of HfO2-based resistive switching …
D Maldonado, F Aguirre, G González-Cordero, AM Roldán, MB González, ...
Journal of Applied Physics 130 (5), 054503, 2021
122021
Resistive Switching and Charge Transport in Laser-Fabricated Graphene Oxide Memristors: A Time Series and Quantum Point Contact Modeling Approach
N Rodriguez, D Maldonado, FJ Romero, FJ Alonso, AM Aguilera, ...
Materials 12 (22), 3734, 2019
102019
Non-uniform spline quasi-interpolation to extract the series resistance in resistive switching memristors for compact modeling purposes
MJ Ibáñez, D Barrera, D Maldonado, R Yáñez, JB Roldán
Mathematics 9 (17), 2159, 2021
82021
Influence of magnetic field on the operation of TiN/Ti/HfO2/W resistive memories
D Maldonado, AM Roldán, MB González, F Jiménez-Molinos, ...
Microelectronic Engineering 215, 110983, 2019
72019
Variability estimation in resistive switching devices, a numerical and kinetic Monte Carlo perspective
D Maldonado, S Aldana, MB Gonzalez, F Jiménez-Molinos, MJ Ibáñez, ...
Microelectronic Engineering 257, 111736, 2022
62022
One cut-point phase-type distributions in reliability. An application to resistive random access memories
C Acal, JE Ruiz-Castro, D Maldonado, JB Roldán
Mathematics 9 (21), 2734, 2021
42021
Modeling of the temperature effects in filamentary-type resistive switching memories using quantum point-contact theory
M Calixto, D Maldonado, E Miranda, JB Roldán
Journal of Physics D: Applied Physics 53 (29), 295106, 2020
42020
Reversible dielectric breakdown in h-BN stacks: a statistical study of the switching voltages
JB Roldán, D Maldonado, F Jiménez-Molinos, C Acal, JE Ruiz-Castro, ...
2020 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2020
42020
An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices
D Maldonado, C Aguilera-Pedregosa, G Vinuesa, H García, S Dueñas, ...
Chaos, Solitons & Fractals 160, 112247, 2022
32022
Time series modeling of the cycle-to-cycle variability in h-BN based memristors
JB Roldán, D Maldonado, FJ Alonso, AM Roldán, F Hui, Y Shi, ...
2021 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2021
32021
Advanced temperature dependent statistical analysis of forming voltage distributions for three different HfO2-based RRAM technologies
E Pérez, D Maldonado, C Acal, JE Ruiz-Castro, AM Aguilera, ...
Solid-State Electronics 176, 107961, 2021
32021
Comprehensive study on unipolar RRAM charge conduction and stochastic features, a simulation approach
D Maldonado, F Gómez-Campos, MB González, A Roldan, ...
Journal of Physics D: Applied Physics, 2022
22022
Synaptic devices based on HfO2 memristors
MB González, M Maestro-Izquierdo, S Poblador, M Zabala, ...
Mem-elements for neuromorphic circuits with artificial intelligence …, 2021
12021
Spiking neural networks based on two-dimensional materials
JB Roldan, D Maldonado, C Aguilera-Pedregosa, E Moreno, F Aguirre, ...
npj 2D Materials and Applications 6 (1), 1-7, 2022
2022
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