Hongsik Jeong
Hongsik Jeong
Professor of Material Science and Engineering, Ulsan National Institute of Science and Technology
Geverifieerd e-mailadres voor mail.tsinghua.edu.cn
Geciteerd door
Geciteerd door
A 90 nm 1.8 V 512 Mb diode-switch PRAM with 266 MB/s read throughput
KJ Lee, BH Cho, WY Cho, S Kang, BG Choi, HR Oh, CS Lee, HJ Kim, ...
IEEE Journal of Solid-State Circuits 43 (1), 150-162, 2008
A 0.18-/spl mu/m 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM)
WY Cho, BH Cho, BG Choi, HR Oh, S Kang, KS Kim, KH Kim, DE Kim, ...
IEEE Journal of Solid-State Circuits 40 (1), 293-300, 2005
A 0.1- 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation
S Kang, WY Cho, BH Cho, KJ Lee, CS Lee, HR Oh, BG Choi, Q Wang, ...
IEEE Journal of Solid-State Circuits 42 (1), 210-218, 2006
Enhanced write performance of a 64-mb phase-change random access memory
HR Oh, B Cho, WY Cho, S Kang, B Choi, H Kim, K Kim, D Kim, C Kwak, ...
IEEE Journal of Solid-State Circuits 41 (1), 122-126, 2005
Phase-change behavior of stoichiometric Ge2Sb2Te5 in phase-change random access memory
JB Park, GS Park, HS Baik, JH Lee, H Jeong, K Kim
Journal of the electrochemical society 154 (3), H139, 2007
Effect of lattice contraction on the Raman shifts of CdSe quantum dots in glass matrices
YN Hwang, S Shin, HL Park, SH Park, U Kim, HS Jeong, E Shin, D Kim
Physical Review B 54 (21), 15120, 1996
Memory device employing NVRAM and flash memory cells
B Jeon, B Min, H Jeong
US Patent 7,916,538, 2011
Semiconductor device having multilayer interconnection structure and manufacturing method thereof
W Yang, K Kim, H Jeong
US Patent 6,836,019, 2004
Ge nitride formation in N-doped amorphous
MC Jung, YM Lee, HD Kim, MG Kim, HJ Shin, KH Kim, SA Song, ...
Applied Physics Letters 91 (8), 083514, 2007
Changes in the electronic structures and optical band gap of and N-doped during phase transition
YK Kim, K Jeong, MH Cho, UK Hwang, HS Jeong, K Kim
Applied physics letters 90 (17), 171920, 2007
A 0.24-μm 2.0-V 1T1MTJ 16-kb nonvolatile magnetoresistance RAM with self-reference sensing scheme
G Jeong, W Cho, S Ahn, H Jeong, G Koh, Y Hwang, K Kim
IEEE Journal of solid-state circuits 38 (11), 1906-1910, 2003
Ge2Sb2Te5 confined structures and integration of 64 Mb phase-change random access memory
F Yeung, SJ Ahn, YN Hwang, CW Jeong, YJ Song, SY Lee, SH Lee, ...
Japanese Journal of Applied Physics 44 (4S), 2691, 2005
Understanding atomic structures of amorphous C-doped Ge2Sb2Te5 phase-change memory materials
KB Borisenko, Y Chen, DJH Cockayne, SA Song, HS Jeong
Acta materialia 59 (11), 4335-4342, 2011
Thermal and electrical conduction of single-crystal Bi 2 Te 3 nanostructures grown using a one step process
D Park, S Park, K Jeong, HS Jeong, JY Song, MH Cho
Scientific reports 6 (1), 1-9, 2016
Memristor devices for neural networks
H Jeong, L Shi
Journal of Physics D: Applied Physics 52 (2), 023003, 2018
Bit line landing pad and borderless contact on bit line stud with localized etch stop layer and manufacturing method thereof
W Yang, Y Hwang, H Jeong, K Kim
US Patent 6,764,941, 2004
Highly reliable ring-type contact for high-density phase change memory
CW Jeong, SJ Ahn, YN Hwang, YJ Song, JH Oh, SY Lee, SH Lee, ...
Japanese journal of applied physics 45 (4S), 3233, 2006
A 2.5-V, 333-Mb/s/pin, 1-Gbit, double-data-rate synchronous DRAM
H Yoon, GW Cha, C Yoo, NJ Kim, KY Kim, CH Lee, KN Lim, K Lee, ...
IEEE Journal of Solid-State Circuits 34 (11), 1589-1599, 1999
In situ dynamic HR-TEM and EELS study on phase transitions of Ge2Sb2Te5 chalcogenides
SA Song, W Zhang, HS Jeong, JG Kim, YJ Kim
Ultramicroscopy 108 (11), 1408-1419, 2008
Phase-changeable memory device and method of manufacturing the same
S Yang, H Jeong, Y Hwang
US Patent 7,295,463, 2007
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