| Photothermal deflection spectroscopy and detection WB Jackson, NM Amer, AC Boccara, D Fournier Applied optics 20 (8), 1333-1344, 1981 | 1770 | 1981 |
| Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study M Stutzmann, WB Jackson, CC Tsai Physical Review B 32 (1), 23, 1985 | 1578 | 1985 |
| A polymer/semiconductor write-once read-many-times memory S Möller, C Perlov, W Jackson, C Taussig, SR Forrest Nature 426 (6963), 166-169, 2003 | 867 | 2003 |
| Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopy WB Jackson, NM Amer Physical Review B 25 (8), 5559, 1982 | 785 | 1982 |
| Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon J Kakalios, RA Street, WB Jackson Physical review letters 59 (9), 1037, 1987 | 751 | 1987 |
| Piezoelectric photoacoustic detection: theory and experiment W Jackson, NM Amer Journal of Applied Physics 51 (6), 3343-3353, 1980 | 485 | 1980 |
| Sensitive photothermal deflection technique for measuring absorption in optically thin media AC Boccara, D Fournier, W Jackson, NM Amer Optics Letters 5 (9), 377-379, 1980 | 455 | 1980 |
| Energy dependence of the optical matrix element in hydrogenated amorphous and crystalline silicon WB Jackson, SM Kelso, CC Tsai, JW Allen, SJ Oh Physical Review B 31 (8), 5187, 1985 | 397 | 1985 |
| Hydrogen diffusion in amorphous silicon RA Street, CC Tsai, J Kakalios, WB Jackson Philosophical Magazine B 56 (3), 305-320, 1987 | 335 | 1987 |
| High-performance flexible zinc tin oxide field-effect transistors WB Jackson, RL Hoffman, GS Herman Applied physics letters 87 (19), 193503, 2005 | 327 | 2005 |
| Passivation kinetics of two types of defects in polysilicon TFT by plasma hydrogenation IW Wu, TY Huang, WB Jackson, AG Lewis, A Chiang IEEE Electron Device Letters 12 (4), 181-183, 1991 | 297 | 1991 |
| Density of gap states of silicon grain boundaries determined by optical absorption WB Jackson, NM Johnson, DK Biegelsen Applied Physics Letters 43 (2), 195-197, 1983 | 283 | 1983 |
| Role of hydrogen in the formation of metastable defects in hydrogenated amorphous silicon WB Jackson, JM Marshall, MD Moyer Physical Review B 39 (2), 1164, 1989 | 247 | 1989 |
| Electronic device with recovery layer proximate to active layer WB Jackson, M Hack US Patent 5,081,513, 1992 | 239 | 1992 |
| Storage structure with cleaved layer NW Meyer, AL Van Brocklin, P Fricke, W Jackson, KJ Eldredge US Patent 6,967,149, 2005 | 215 | 2005 |
| Hydrogen transport in amorphous silicon WB Jackson, CC Tsai Physical Review B 45 (12), 6564, 1992 | 198 | 1992 |
| Mechanisms of thermal equilibration in doped amorphous silicon RA Street, M Hack, WB Jackson Physical Review B 37 (8), 4209, 1988 | 197 | 1988 |
| Microdevice valve structures to fluid control DK Biegelsen, WB Jackson, PCP Cheung, MH Yim, AA Berlin US Patent 5,971,355, 1999 | 187 | 1999 |
| Hydrogen passivation of grain boundary defects in polycrystalline silicon thin films NH Nickel, NM Johnson, WB Jackson Applied physics letters 62 (25), 3285-3287, 1993 | 185 | 1993 |
| Connection between the Meyer-Neldel relation and multiple-trapping transport WB Jackson Physical Review B 38 (5), 3595, 1988 | 181 | 1988 |
