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WARREN B JACKSON
WARREN B JACKSON
Principal Scientist
Geverifieerd e-mailadres voor parc.com
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Photothermal deflection spectroscopy and detection
WB Jackson, NM Amer, AC Boccara, D Fournier
Applied optics 20 (8), 1333-1344, 1981
17981981
Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study
M Stutzmann, WB Jackson, CC Tsai
Physical Review B 32 (1), 23, 1985
15671985
A polymer/semiconductor write-once read-many-times memory
S Möller, C Perlov, W Jackson, C Taussig, SR Forrest
Nature 426 (6963), 166-169, 2003
8892003
Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopy
WB Jackson, NM Amer
Physical Review B 25 (8), 5559, 1982
8301982
Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon
J Kakalios, RA Street, WB Jackson
Physical review letters 59 (9), 1037, 1987
7621987
Piezoelectric photoacoustic detection: theory and experiment
W Jackson, NM Amer
Journal of Applied Physics 51 (6), 3343-3353, 1980
4861980
Sensitive photothermal deflection technique for measuring absorption in optically thin media
AC Boccara, D Fournier, W Jackson, NM Amer
Optics Letters 5 (9), 377-379, 1980
4671980
Energy dependence of the optical matrix element in hydrogenated amorphous and crystalline silicon
WB Jackson, SM Kelso, CC Tsai, JW Allen, SJ Oh
Physical Review B 31 (8), 5187, 1985
4011985
High-performance flexible zinc tin oxide field-effect transistors
WB Jackson, RL Hoffman, GS Herman
Applied physics letters 87 (19), 2005
3372005
Hydrogen diffusion in amorphous silicon
RA Street, CC Tsai, J Kakalios, WB Jackson
Philosophical Magazine B 56 (3), 305-320, 1987
3231987
Passivation kinetics of two types of defects in polysilicon TFT by plasma hydrogenation
IW Wu, TY Huang, WB Jackson, AG Lewis, A Chiang
IEEE Electron Device Letters 12 (4), 181-183, 1991
2981991
Density of gap states of silicon grain boundaries determined by optical absorption
WB Jackson, NM Johnson, DK Biegelsen
Applied physics letters 43 (2), 195-197, 1983
2851983
Role of hydrogen in the formation of metastable defects in hydrogenated amorphous silicon
WB Jackson, JM Marshall, MD Moyer
Physical Review B 39 (2), 1164, 1989
2501989
Storage structure with cleaved layer
NW Meyer, AL Van Brocklin, P Fricke, W Jackson, KJ Eldredge
US Patent 6,967,149, 2005
2432005
Electronic device with recovery layer proximate to active layer
WB Jackson, M Hack
US Patent 5,081,513, 1992
2401992
Hydrogen transport in amorphous silicon
WB Jackson, CC Tsai
Physical Review B 45 (12), 6564, 1992
2001992
Hydrogen passivation of grain boundary defects in polycrystalline silicon thin films
NH Nickel, NM Johnson, WB Jackson
Applied physics letters 62 (25), 3285-3287, 1993
1901993
Mechanisms of thermal equilibration in doped amorphous silicon
RA Street, M Hack, WB Jackson
Physical Review B 37 (8), 4209, 1988
1901988
Microdevice valve structures to fluid control
DK Biegelsen, WB Jackson, PCP Cheung, MH Yim, AA Berlin
US Patent 5,971,355, 1999
1881999
An accurate locally active memristor model for S-type negative differential resistance in NbOx
GA Gibson, S Musunuru, J Zhang, K Vandenberghe, J Lee, CC Hsieh, ...
Applied Physics Letters 108 (2), 2016
1862016
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