| A 22nm SoC platform technology featuring 3-D tri-gate and high-k/metal gate, optimized for ultra low power, high performance and high density SoC applications CH Jan, U Bhattacharya, R Brain, SJ Choi, G Curello, G Gupta, W Hafez, ... 2012 International Electron Devices Meeting, 3.1. 1-3.1. 4, 2012 | 371 | 2012 |
| N-polar GaN epitaxy and high electron mobility transistors MH Wong, S Keller, SD Nidhi, DJ Denninghoff, S Kolluri, DF Brown, J Lu, ... Semiconductor Science and Technology 28 (7), 074009, 2013 | 253 | 2013 |
| Ultralow nonalloyed ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In (Ga) N regrowth S Dasgupta, N Nidhi, DF Brown, F Wu, S Keller, JS Speck, UK Mishra Applied physics letters 96 (14), 2010 | 161 | 2010 |
| A 14 nm SoC platform technology featuring 2nd generation Tri-Gate transistors, 70 nm gate pitch, 52 nm metal pitch, and 0.0499 um2 SRAM cells, optimized for … CH Jan, F Al-Amoody, HY Chang, T Chang, YW Chen, N Dias, W Hafez, ... 2015 Symposium on VLSI Technology (VLSI Technology), T12-T13, 2015 | 103 | 2015 |
| Study of impact of access resistance on high-frequency performance of AlGaN/GaN HEMTs by measurements at low temperatures T Palacios, A Chakraborty, S Keller, UK Mishra IEEE Electron Device Letters 27 (11), 877-880, 2006 | 74 | 2006 |
| Enhancement-mode N-polar GaN MISFETs with self-aligned source/drain regrowth U Singisetti, MH Wong, S Dasgupta, B Swenson, BJ Thibeault, JS Speck, ... Electron Device Letters, IEEE 32 (2), 137-139, 2011 | 67 | 2011 |
| Automatic device for heating and frothing a liquid, in particular milk R Oldani, E Bottelli US Patent 6,840,163, 2005 | 38* | 2005 |
| Self-aligned N-polar GaN/InAlN MIS-HEMTs with record extrinsic transconductance of 1105 mS/mm S Dasgupta, J Lu, JS Speck, UK Mishra IEEE Electron Device Letters 33 (6), 794-796, 2012 | 37 | 2012 |
| Growth, Structural, and Electrical Characterizations of N-Polar InAlN by Plasma-Assisted Molecular Beam Epitaxy S Dasgupta, SC Nidhi, F Wu, JS Speck, UK Mishra Applied physics express 4 (4), 045502, 2011 | 36 | 2011 |
| Scaled Self-Aligned N-Polar GaN/AlGaN MIS-HEMTs Withof 275 GHz S Dasgupta, J Lu, JS Speck, UK Mishra IEEE electron device letters 33 (7), 961-963, 2012 | 33 | 2012 |
| Experimental demonstration of III-nitride hot-electron transistor with GaN base S Dasgupta, A Raman, JS Speck, UK Mishra IEEE electron device letters 32 (9), 1212-1214, 2011 | 29 | 2011 |
| Transistor reliability characterization and comparisons for a 14 nm tri-gate technology optimized for System-on-Chip and foundry platforms C Prasad, KW Park, M Chahal, I Meric, SR Novak, S Ramey, P Bai, ... 2016 IEEE International Reliability Physics Symposium (IRPS), 4B-5-1-4B-5-8, 2016 | 27 | 2016 |
| N-Polar InAlN/AlN/GaN MIS-HEMTs DF Brown, F Wu, S Keller, SP DenBaars, UK Mishra IEEE Electron Device Letters 31 (8), 800-802, 2010 | 27 | 2010 |
| fT and fMAX of 47 and 81 GHz, Respectively, on N-Polar GaN/A1N MIS-HEMT S Dasgupta, Y Pei, BL Swenson, DF Brown, S Keller, UK MISHRA, ... IEEE electron device letters 30 (6), 599-601, 2009 | 24 | 2009 |
| N-Polar GaN/AlN MIS-HEMT Withof 204 GHz for Ka-Band Applications S Dasgupta, S Keller, JS Speck, UK Mishra IEEE electron device letters 32 (12), 1683-1685, 2011 | 22 | 2011 |
| N-polar GaN-based highly scaled self-aligned MIS-HEMTs with state-of-the-art fT.LGproduct of 16.8 GHz-µm S Dasgupta, DF Brown, S Keller, JS Speck, UK Mishra 2009 IEEE international electron devices meeting (IEDM), 1-3, 2009 | 21 | 2009 |
| Study of interface barrier of SiNx/GaN interface for nitrogen-polar GaN based high electron mobility transistors N Nidhi, S Rajan, S Keller, F Wu, SP DenBaars, JS Speck, UK Mishra Journal of Applied Physics 103 (12), 2008 | 20 | 2008 |
| Self-aligned technology for N-polar GaN/Al (Ga) N MIS-HEMTs S Dasgupta, DF Brown, U Singisetti, S Keller, JS Speck, UK Mishra IEEE electron device letters 32 (1), 33-35, 2010 | 19 | 2010 |
| Method and system for transferring data to an electronic toy or other electronic device TL Gilton US Patent 7,303,471, 2007 | 18* | 2007 |
| N-polar GaN/AlN MIS-HEMT for Ka-band power applications S Dasgupta, Y Pei, BL Swenson, S Keller, JS Speck, UK Mishra IEEE electron device letters 31 (12), 1437-1439, 2010 | 17 | 2010 |
