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Tim Veal
Tim Veal
Professor of Materials Physics, Stephenson Inst. for Ren. Energy and Physics, Univ. of Liverpool
Verified email at liverpool.ac.uk - Homepage
Title
Cited by
Cited by
Year
Intrinsic electron accumulation at clean InN surfaces
I Mahboob, TD Veal, CF McConville, H Lu, WJ Schaff
Physical review letters 92 (3), 036804, 2004
5952004
Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral
PDC King, TD Veal, F Fuchs, CY Wang, DJ Payne, A Bourlange, H Zhang, ...
Physical Review B—Condensed Matter and Materials Physics 79 (20), 205211, 2009
5352009
Conductivity in transparent oxide semiconductors
PDC King, TD Veal
Journal of Physics: Condensed Matter 23 (33), 334214, 2011
3402011
Electronic and optical properties of single crystal SnS 2: an earth-abundant disulfide photocatalyst
LA Burton, TJ Whittles, D Hesp, WM Linhart, JM Skelton, B Hou, ...
Journal of Materials Chemistry A 4 (4), 1312-1318, 2016
3092016
Surface Electron Accumulation and the Charge Neutrality Level in
PDC King, TD Veal, DJ Payne, A Bourlange, RG Egdell, CF McConville
Physical review letters 101 (11), 116808, 2008
3082008
Origin of electron accumulation at wurtzite InN surfaces
I Mahboob, TD Veal, LFJ Piper, CF McConville, H Lu, WJ Schaff, ...
Physical Review B 69 (20), 201307, 2004
2462004
Band Alignments, Valence Bands, and Core Levels in the Tin Sulfides SnS, SnS2, and Sn2S3: Experiment and Theory
TJ Whittles, LA Burton, JM Skelton, A Walsh, TD Veal, VR Dhanak
Chemistry of Materials 28 (11), 3718-3726, 2016
2202016
Bandgap and effective mass of epitaxial cadmium oxide
PH Jefferson, SA Hatfield, TD Veal, PDC King, CF McConville, ...
Applied physics letters 92 (2), 2008
2162008
Origin of the n-type conductivity of InN: The role of positively charged dislocations
LFJ Piper, TD Veal, CF McConville, H Lu, WJ Schaff
Applied physics letters 88 (25), 2006
1882006
Shallow donor state of hydrogen in and : Implications for conductivity in transparent conducting oxides
PDC King, RL Lichti, YG Celebi, JM Gil, RC Vilão, HV Alberto, ...
Physical Review B—Condensed Matter and Materials Physics 80 (8), 081201, 2009
1812009
Valence-band electronic structure of CdO, ZnO, and MgO from x-ray photoemission spectroscopy and quasi-particle-corrected density-functional theory calculations
PDC King, TD Veal, A Schleife, J Zúñiga-Pérez, B Martel, PH Jefferson, ...
Physical Review B 79 (20), 205205, 2009
1772009
InN/GaN valence band offset: High-resolution x-ray photoemission spectroscopy measurements
PDC King, TD Veal, CE Kendrick, LR Bailey, SM Durbin, CF McConville
Physical Review B—Condensed Matter and Materials Physics 78 (3), 033308, 2008
1632008
Growth, disorder, and physical properties of ZnSnN2
N Feldberg, JD Aldous, WM Linhart, LJ Phillips, K Durose, PA Stampe, ...
Applied Physics Letters 103 (4), 2013
1502013
Bulk transport measurements in ZnO: The effect of surface electron layers
MW Allen, CH Swartz, TH Myers, TD Veal, CF McConville, SM Durbin
Physical Review B—Condensed Matter and Materials Physics 81 (7), 075211, 2010
1452010
Universality of electron accumulation at wurtzite c-and a-plane and zinc-blende InN surfaces
PDC King, TD Veal, CF McConville, F Fuchs, J Furthmüller, F Bechstedt, ...
Applied Physics Letters 91 (9), 2007
1432007
Determination of the branch-point energy of InN: Chemical trends in common-cation and common-anion semiconductors
PDC King, TD Veal, PH Jefferson, SA Hatfield, LFJ Piper, CF McConville, ...
Physical Review B—Condensed Matter and Materials Physics 77 (4), 045316, 2008
1422008
Quantized Electron Accumulation States in Indium Nitride Studied<? format?> by Angle-Resolved Photoemission Spectroscopy
L Colakerol, TD Veal, HK Jeong, L Plucinski, A DeMasi, T Learmonth, ...
Physical review letters 97 (23), 237601, 2006
1372006
Band Gap Dependence on Cation Disorder in ZnSnN2 Solar Absorber
TD Veal, N Feldberg, NF Quackenbush, WM Linhart, DO Scanlon, ...
Advanced Energy Materials 5 (24), 201501462, 2015
1262015
Self‐Compensation in Transparent Conducting F‐Doped SnO2
JEN Swallow, BAD Williamson, TJ Whittles, M Birkett, TJ Featherstone, ...
Advanced Functional Materials 28 (4), 1701900, 2018
1202018
Valence band offset of InN∕ AlN heterojunctions measured by x-ray photoelectron spectroscopy
PDC King, TD Veal, PH Jefferson, CF McConville, T Wang, PJ Parbrook, ...
Applied physics letters 90 (13), 2007
1192007
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