Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon PA Stolk, HJ Gossmann, DJ Eaglesham, DC Jacobson, CS Rafferty, ... Journal of Applied Physics 81 (9), 6031-6050, 1997 | 905 | 1997 |
Implantation and transient B diffusion in Si: The source of the interstitials DJ Eaglesham, PA Stolk, HJ Gossmann, JM Poate Applied Physics Letters 65 (18), 2305-2307, 1994 | 735 | 1994 |
Modeling statistical dopant fluctuations in MOS transistors PA Stolk, FP Widdershoven, DBM Klaassen IEEE Transactions on Electron devices 45 (9), 1960-1971, 1998 | 565 | 1998 |
Energetics of self-interstitial clusters in Si NEB Cowern, G Mannino, PA Stolk, F Roozeboom, HGA Huizing, ... Physical Review Letters 82 (22), 4460, 1999 | 414 | 1999 |
Transient enhanced diffusion of boron in Si SC Jain, W Schoenmaker, R Lindsay, PA Stolk, S Decoutere, M Willander, ... Journal of applied physics 91 (11), 8919-8941, 2002 | 300 | 2002 |
Carbon incorporation in silicon for suppressing interstitial‐enhanced boron diffusion PA Stolk, DJ Eaglesham, HJ Gossmann, JM Poate Applied physics letters 66 (11), 1370-1372, 1995 | 288 | 1995 |
Trap‐limited interstitial diffusion and enhanced boron clustering in silicon PA Stolk, HJ Gossmann, DJ Eaglesham, DC Jacobson, JM Poate, ... Applied physics letters 66 (5), 568-570, 1995 | 170 | 1995 |
Process for controlling dopant diffusion in a semiconductor layer and semiconductor layer formed thereby DJ Eaglesham, HJL Gossmann, JM Poate, PA Stolk US Patent 5,731,626, 1998 | 152 | 1998 |
Process for controlling dopant diffusion in a semiconductor layer DJ Eaglesham, HJL Gossmann, JM Poate, PA Stolk US Patent 6,043,139, 2000 | 135 | 2000 |
Implantation and transient boron diffusion: The role of the silicon self-interstitial PA Stolk, HJ Gossmann, DJ Eaglesham, JM Poate Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1995 | 128 | 1995 |
Implant damage and transient enhanced diffusion in Si DJ Eaglesham, PA Stolk, HJ Gossmann, TE Haynes, JM Poate Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1995 | 117 | 1995 |
Interactions of ion‐implantation‐induced interstitials with boron at high concentrations in silicon TE Haynes, DJ Eaglesham, PA Stolk, HJ Gossmann, DC Jacobson, ... Applied physics letters 69 (10), 1376-1378, 1996 | 112 | 1996 |
The interstitial fraction of diffusivity of common dopants in Si HJ Gossmann, TE Haynes, PA Stolk, DC Jacobson, GH Gilmer, JM Poate, ... Applied physics letters 71 (26), 3862-3864, 1997 | 106 | 1997 |
Hydrogen solubility and network stability in amorphous silicon S Acco, DL Williamson, PA Stolk, FW Saris, MJ Van den Boogaard, ... Physical Review B 53 (8), 4415, 1996 | 102 | 1996 |
The effect of statistical dopant fluctuations on MOS device performance PA Stolk, DBM Klaassen International Electron Devices Meeting. Technical Digest, 627-630, 1996 | 100 | 1996 |
Contribution of defects to electronic, structural, and thermodynamic properties of amorphous silicon PA Stolk, FW Saris, AJM Berntsen, WF Van der Weg, LT Sealy, RC Barklie, ... Journal of Applied Physics 75 (11), 7266-7286, 1994 | 100 | 1994 |
Effects of gate depletion and boron penetration on matching of deep submicron CMOS transistors HP Tuinhout, AH Montree, J Schmitz, PA Stolk International Electron Devices Meeting. IEDM Technical Digest, 631-634, 1997 | 97 | 1997 |
On the nanostructure of pure amorphous silicon DL Williamson, S Roorda, M Chicoine, R Tabti, PA Stolk, S Acco, ... Applied Physics Letters 67 (2), 226-228, 1995 | 91 | 1995 |
Iron gettering mechanisms in silicon JL Benton, PA Stolk, DJ Eaglesham, DC Jacobson, JY Cheng, JM Poate, ... Journal of applied physics 80 (6), 3275-3284, 1996 | 86 | 1996 |
CMOS device optimization for mixed-signal technologies PA Stolk, HP Tuinhout, R Duffy, E Augendre, LP Bellefroid, MJB Bolt, ... International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001 | 77 | 2001 |