Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon PA Stolk, HJ Gossmann, DJ Eaglesham, DC Jacobson, CS Rafferty, ... Journal of Applied Physics 81 (9), 6031-6050, 1997 | 898 | 1997 |
Implantation and transient B diffusion in Si: The source of the interstitials DJ Eaglesham, PA Stolk, HJ Gossmann, JM Poate Applied Physics Letters 65 (18), 2305-2307, 1994 | 735 | 1994 |
Modeling statistical dopant fluctuations in MOS transistors PA Stolk, FP Widdershoven, DBM Klaassen IEEE Transactions on Electron devices 45 (9), 1960-1971, 1998 | 557 | 1998 |
Energetics of self-interstitial clusters in Si NEB Cowern, G Mannino, PA Stolk, F Roozeboom, HGA Huizing, ... Physical Review Letters 82 (22), 4460, 1999 | 418 | 1999 |
Transient enhanced diffusion of boron in Si SC Jain, W Schoenmaker, R Lindsay, PA Stolk, S Decoutere, M Willander, ... Journal of applied physics 91 (11), 8919-8941, 2002 | 299 | 2002 |
Carbon incorporation in silicon for suppressing interstitial‐enhanced boron diffusion PA Stolk, DJ Eaglesham, HJ Gossmann, JM Poate Applied physics letters 66 (11), 1370-1372, 1995 | 288 | 1995 |
Trap‐limited interstitial diffusion and enhanced boron clustering in silicon PA Stolk, HJ Gossmann, DJ Eaglesham, DC Jacobson, JM Poate, ... Applied physics letters 66 (5), 568-570, 1995 | 168 | 1995 |
Process for controlling dopant diffusion in a semiconductor layer and semiconductor layer formed thereby DJ Eaglesham, HJL Gossmann, JM Poate, PA Stolk US Patent 5,731,626, 1998 | 152 | 1998 |
Process for controlling dopant diffusion in a semiconductor layer DJ Eaglesham, HJL Gossmann, JM Poate, PA Stolk US Patent 6,043,139, 2000 | 135 | 2000 |
Implantation and transient boron diffusion: The role of the silicon self-interstitial PA Stolk, HJ Gossmann, DJ Eaglesham, JM Poate Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1995 | 127 | 1995 |
Implant damage and transient enhanced diffusion in Si DJ Eaglesham, PA Stolk, HJ Gossmann, TE Haynes, JM Poate Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1995 | 117 | 1995 |
Interactions of ion‐implantation‐induced interstitials with boron at high concentrations in silicon TE Haynes, DJ Eaglesham, PA Stolk, HJ Gossmann, DC Jacobson, ... Applied physics letters 69 (10), 1376-1378, 1996 | 115 | 1996 |
The interstitial fraction of diffusivity of common dopants in Si HJ Gossmann, TE Haynes, PA Stolk, DC Jacobson, GH Gilmer, JM Poate, ... Applied physics letters 71 (26), 3862-3864, 1997 | 106 | 1997 |
Hydrogen solubility and network stability in amorphous silicon S Acco, DL Williamson, PA Stolk, FW Saris, MJ Van den Boogaard, ... Physical Review B 53 (8), 4415, 1996 | 101 | 1996 |
The effect of statistical dopant fluctuations on MOS device performance PA Stolk, DBM Klaassen International Electron Devices Meeting. Technical Digest, 627-630, 1996 | 99 | 1996 |
Contribution of defects to electronic, structural, and thermodynamic properties of amorphous silicon PA Stolk, FW Saris, AJM Berntsen, WF Weg, LT Sealy, RC Barklie, G Krötz, ... Journal of Applied Physics 75 (11), 7266-7286, 1994 | 99 | 1994 |
Effects of gate depletion and boron penetration on matching of deep submicron CMOS transistors HP Tuinhout, AH Montree, J Schmitz, PA Stolk International Electron Devices Meeting. IEDM Technical Digest, 631-634, 1997 | 97 | 1997 |
On the nanostructure of pure amorphous silicon DL Williamson, S Roorda, M Chicoine, R Tabti, PA Stolk, S Acco, ... Applied Physics Letters 67 (2), 226-228, 1995 | 91 | 1995 |
Iron gettering mechanisms in silicon JL Benton, PA Stolk, DJ Eaglesham, DC Jacobson, JY Cheng, JM Poate, ... Journal of applied physics 80 (6), 3275-3284, 1996 | 85 | 1996 |
CMOS device optimization for mixed-signal technologies PA Stolk, HP Tuinhout, R Duffy, E Augendre, LP Bellefroid, MJB Bolt, ... International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001 | 75 | 2001 |