In-situ atomic layer deposition A Dip, S Sasaki, M Toeller, K Reid US Patent App. 11/462,234, 2007 | 468 | 2007 |
In-situ hybrid deposition of high dielectric constant films using atomic layer deposition and chemical vapor deposition KG Reid, A Dip US Patent 7,816,278, 2010 | 432 | 2010 |
A high performance 1.8 V, 0.20/spl mu/m CMOS technology with copper metallization S Venkatesan, AV Gelatos, S Hisra, B Smith, R Islam, J Cope, B Wilson, ... International Electron Devices Meeting. IEDM Technical Digest, 769-772, 1997 | 323 | 1997 |
Low-temperature dielectric film formation by chemical vapor deposition A Dip, KG Reid US Patent 7,994,070, 2011 | 313 | 2011 |
Fabrication and operation of correlated electron material devices CAP de ARAUJO, JB Celinska, KG Reid, L Shifren | 208 | 2018 |
Growth and surface chemistry of oxynitride gate dielectric using nitric oxide RI Hegde, PJ Tobin, KG Reid, B Maiti, SA Ajuria Applied physics letters 66 (21), 2882-2884, 1995 | 187 | 1995 |
Furnace grown gate oxynitride using nitric oxide (NO) Y Okada, PJ Tobin, KG Reid, RI Hegde, B Maiti, SA Ajuria IEEE transactions on electron devices 41 (9), 1608-1613, 1994 | 120 | 1994 |
Atomic layer epitaxy of GaInP ordered alloy BT McDermott, KG Reid, NA El‐Masry, SM Bedair, WM Duncan, X Yin, ... Applied physics letters 56 (12), 1172-1174, 1990 | 86 | 1990 |
80 nm poly-Si gate CMOS with HfO_2 gate dielectric C Hobbs IEDM Technical Digest, 2001, 651-654, 2001 | 69 | 2001 |
Atomic layer epitaxy of h-BN (0001) multilayers on Co (0001) and molecular beam epitaxy growth of graphene on h-BN (0001)/Co (0001) MS Driver, JD Beatty, O Olanipekun, K Reid, A Rath, PM Voyles, ... Langmuir 32 (11), 2601-2607, 2016 | 67 | 2016 |
Fabrication of correlated electron material devices KG Reid, CAP de Araujo, L Shifren US Patent 9,627,615, 2017 | 62 | 2017 |
Formation of a metal-containing film by sequential gas exposure in a batch type processing system A Dip, M Toeller, K Reid US Patent App. 10/662,522, 2005 | 44 | 2005 |
80 nm poly-Si gate CMOS with HfO/sub 2/gate dielectric C Hobbs, H Tseng, K Reid, B Taylor, L Dip, L Hebert, R Garcia, R Hegde, ... International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001 | 36* | 2001 |
Barrier layer for correlated electron material KG Reid, L Shifren, CAP de Araujo US Patent 9,660,189, 2017 | 35 | 2017 |
IEEE Trans. Electron Devices Y Okada, PJ Tobin, KG Reid, RI Hegde, B Maiti, SA Ajuria IEEE Trans. Electron Devices 41, 191, 1994 | 32 | 1994 |
Role of trimethylgallium exposure time in carbon doping and high temperature atomic layer epitaxy of GaAs KG Reid, HM Urdianyk, SM Bedair Applied physics letters 59 (19), 2397-2399, 1991 | 32 | 1991 |
High performance 20/spl Aring/NO oxynitride for gate dielectric in deep subquarter micron CMOS technology B Maiti, PJ Tobin, V Misra, RI Hegde, KG Reid, C Gelatos International Electron Devices Meeting. IEDM Technical Digest, 651-654, 1997 | 30 | 1997 |
Fabrication of correlated electron material devices method to control carbon KG Reid, L Shifren US Patent 10,170,700, 2019 | 29 | 2019 |
Gate oxynitride grown in nitric oxide (NO) Y Okada, PJ Tobin, KG Reid, RI Hegde, B Maiti, SA Ajuria Proceedings of 1994 VLSI Technology Symposium, 105-106, 1994 | 29 | 1994 |
Fabrication of correlated electron material devices comprising nitrogen KG Reid, L Shifren, CAP de Araujo, JB Celinska US Patent App. 15/046,177, 2017 | 26 | 2017 |