| Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN E Sakalauskas, H Behmenburg, C Hums, P Schley, G Rossbach, ... Journal of Physics D: Applied Physics 43 (36), 365102, 2010 | 92 | 2010 |
| InAlN/GaN HEMTs on sapphire substrate with 2.9-W/mm output power density at 18 GHz F Lecourt, N Ketteniss, H Behmenburg, N Defrance, V Hoel, ... IEEE electron device letters 32 (11), 1537-1539, 2011 | 49 | 2011 |
| Power performance at 40 GHz on quaternary barrier InAlGaN/GaN HEMT F Lecourt, A Agboton, N Ketteniss, H Behmenburg, N Defrance, V Hoel, ... IEEE electron device letters 34 (8), 978-980, 2013 | 47 | 2013 |
| Effect of carbon doping level on static and dynamic properties of AlGaN/GaN heterostructures grown on silicon H Yacoub, T Zweipfennig, G Lükens, H Behmenburg, D Fahle, ... IEEE Transactions on Electron Devices 65 (8), 3192-3198, 2018 | 37 | 2018 |
| Dislocation density assessment via X‐ray GaN rocking curve scans I Booker, L Rahimzadeh Khoshroo, JF Woitok, V Kaganer, C Mauder, ... physica status solidi c 7 (7‐8), 1787-1789, 2010 | 35 | 2010 |
| The structure of InAlN/GaN heterostructures for high electron mobility transistors A Vilalta‐Clemente, MA Poisson, H Behmenburg, C Giesen, M Heuken, ... physica status solidi (a) 207 (5), 1105-1108, 2010 | 30 | 2010 |
| Dependence of InN properties on MOCVD growth parameters Ö Tuna, H Behmenburg, C Giesen, H Kalisch, RH Jansen, GP Yablonskii, ... physica status solidi c 8 (7‐8), 2044-2046, 2011 | 28 | 2011 |
| Graphoepitaxy of High‐Quality GaN Layers on Graphene/6H–SiC A Kovács, M Duchamp, RE Dunin‐Borkowski, R Yakimova, PL Neumann, ... Advanced materials interfaces 2 (2), 1400230, 2015 | 26 | 2015 |
| Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures S Besendörfer, E Meissner, T Zweipfennig, H Yacoub, D Fahle, ... AIP Advances 10 (4), 2020 | 21 | 2020 |
| Gold catalyst initiated growth of GaN nanowires by MOCVD JP Ahl, H Behmenburg, C Giesen, I Regolin, W Prost, FJ Tegude, ... physica status solidi c 8 (7‐8), 2315-2317, 2011 | 20 | 2011 |
| Investigation of AlN buffer layers on 6H-SiC for AlInN HEMTs grown by MOVPE H Behmenburg, C Giesen, R Srnanek, J Kovac, H Kalisch, M Heuken, ... Journal of Crystal Growth 316 (1), 42-45, 2011 | 20 | 2011 |
| Multicharacterization approach for studying InAl (Ga) N/Al (Ga) N/GaN heterostructures for high electron mobility transistors G Naresh-Kumar, A Vilalta-Clemente, S Pandey, D Skuridina, ... AIP Advances 4 (12), 2014 | 19 | 2014 |
| Electrical properties of thermally oxidized AlInN/AlN/GaN-based metal oxide semiconductor hetero field effect transistors M Eickelkamp, M Weingarten, L Rahimzadeh Khoshroo, N Ketteniss, ... Journal of Applied Physics 110 (8), 2011 | 19 | 2011 |
| Quaternary nitride heterostructure field effect transistors L Rahimzadeh Khoshroo, N Ketteniss, C Mauder, H Behmenburg, ... physica status solidi c 7 (7‐8), 2001-2003, 2010 | 18 | 2010 |
| Influence of barrier thickness on AlInN/AlN/GaN heterostructures and device properties H Behmenburg, LR Khoshroo, M Eickelkamp, C Mauder, M Fieger, ... physica status solidi c 6 (S2 2), S1041-S1044, 2009 | 18 | 2009 |
| Current collapse reduction in InAlGaN/GaN high electron mobility transistors by surface treatment of thermally stable ultrathin in situ SiN passivation A Alexewicz, M Alomari, D Maier, H Behmenburg, C Giesen, M Heuken, ... Solid-state electronics 89, 207-211, 2013 | 17 | 2013 |
| Quaternary enhancement-mode HFET with in situ SiN passivation N Ketteniss, H Behmenburg, H Hahn, A Noculak, B Hollander, H Kalisch, ... IEEE electron device letters 33 (4), 519-521, 2012 | 17 | 2012 |
| In situ SiN passivation of AlInN/GaN heterostructures by MOVPE H Behmenburg, LR Khoshroo, C Mauder, N Ketteniss, KH Lee, ... physica status solidi c 7 (7‐8), 2104-2106, 2010 | 17 | 2010 |
| RF performance of InAlN/AlN/GaN HEMTs on sapphire substrate F Lecourt, N Ketteniss, H Behmenburg, N Defrance, V Hoel, ... Electronics letters 47 (3), 212-214, 2011 | 14 | 2011 |
| Epitaxy and characterisation of AlInGaN heterostructures for HEMT application LR Khoshroo, C Mauder, H Behmenburg, J Woitok, W Zander, J Gruis, ... physica status solidi c 6 (S2 2), S470-S473, 2009 | 14 | 2009 |
